Piezoelectric crystalline films and method of preparing the same

Claim 1

A piezoelectric crystalline film disposed on a substrate, said film consisting essentially of a crystalline zinc oxide film with a hexagonal crystalline structure and a c-axis substantially perpendicular to the substrate surface, characterized in that said crystalline zinc oxide film contains 0.01 to 20.0 atomic percent of at least one element selected from the group consisting of iron, chromium, cobalt and nickel.

Claim 9

A method for making piezoelectric crystalline films comprising simultaneously sputtering zinc oxide and at least one element selected from the group consisting of iron, chromium, cobalt and nickel from a film material source onto a metal or glass substrate to form a crystalline zinc oxide film with a hexagonal crystal structure and a c-axis substantially perpendicular to the substrate surface, said zinc oxide containing 0.01 to 20.0 atomic percent of at least one of said elements, wherein said sputtering is effected by radio-frequency sputtering in an atomosphere of argon or oxygen, or a mixture of argon and oxygen under a pressure of 1 × 10 -1 to 1 × 10 -3 Torr, and wherein said film material source consists essentially of a ceramic of zinc oxide containing at least one of said elements, said substrate being positioned on an anode placed in parallel with a cathode on which said film material source is positioned, said film material source being supplied with an electric power of 2 to 8 w/cm 2 and said substrate being maintained at a temperature of 200° to 500° C. during sputtering.

Claim 10

A method for making piezoelectric crystalline films comprising simultaneously sputtering zinc oxide and at least one element selected from the group consisting of iron, chromium, cobalt and nickel from a film material source onto a metal or glass substrate to form a crystalline zinc oxide film with a hexagonal crystal structure and a c-axis substantially perpendicular to the substrate surface, said zinc oxide containing 0.01 to 20.0 atomic percent of at least one of said elements, wherein said sputtering is effected by radio-frequency sputtering in an atomosphere of argon or oxygen, or a mixture of argon and oxygen under a pressure of 1 × 10 -1 to 1 × 10 -3 Torr, and wherein said film material source consists essentially of a ceramic of zinc oxide containing at least one of said elements, said substrate being positioned on an anode placed in parallel with a cathode on which said film material source is positioned, said film material source being supplied with an electric power of 2 to 8 w/cm 2 and said substrate being maintained at a temperature of 200° to 500° C. during sputtering.