US4148050A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Radiation dose rate hardened light detector
Assignee: United States Department of the Air Force
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Filing: 1978-01-03
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Granted: 1979-04-03
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Expires: 1998-01-03
Abstract
Abstract A radiation dose rate hardened light detector uses a Schottky diode island on a sapphire substrate. The thickness of the silicon is carefully adjusted to produce interference absorption at the light wavelength of interest. The light enters the silicon through the sapphire and is reflected off a metal electrode to produce the interference at the silicon-sapphire interface.
Inventors
- 👤 Roe J. Maier, Jr.
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 22:43
CPC Classifications
H; H10; H10F; H10F30/00; H10F30/20; H10F30/21; H10F30/22; H10F30/227
Claims Analysis
Total Claims: 5
Claim 1
Independent Claim
144 words
A radiation dose rate hardened detector of light being comprised of a sapphire substrate of a preselected thickness and having first and second sides, a silicon island with first and second sides, said first side of said silicon island positioned on said first side of said sapphire substrate, said silicon island having the thickness thereof adjusted to produce interference resonance absorption at a predetermined wavelength, a metal electrode positioned on said second side of said silicon island, said metal electrode being composed of a metal that forms a Schottky diode on said silicon island, a first electrical contact connected to said metal electrode, and a second electrical contact connected to said silicon island, said light entering said detector from said second side of said sapphire substrate and reflecting back and forth in said silicon island causing said absorption to occur in a small region.
Claim 2
Dependent Claim
144 words
A radiation dose rate hardened detector of light being comprised of a sapphire substrate of a preselected thickness and having first and second sides, a silicon island with first and second sides, said first side of said silicon island positioned on said first side of said sapphire substrate, said silicon island having the thickness thereof adjusted to produce interference resonance absorption at a predetermined wavelength, a metal electrode positioned on said second side of said silicon island, said metal electrode being composed of a metal that forms a Schottky diode on said silicon island, a first electrical contact connected to said metal electrode, and a second electrical contact connected to said silicon island, said light entering said detector from said second side of said sapphire substrate and reflecting back and forth in said silicon island causing said absorption to occur in a small region.
Claim 3
Dependent Claim
44 words
A radiation dose rate hardened detector of light as described in claim 1 wherein the thickness of said sapphire is in the region of 5 to 10 mils, and the thickness of said silicon island is in the region of 0.5 to 0.7 umeters.
Claim 4
Dependent Claim
21 words
A radiation dose rate hardened detector of light as described in claim 1 wherein said silicon is of the N type.
Claim 5
Dependent Claim
22 words
A radiation dose rate hardened detector of light as described in claim 1 wherein said silicon island is of the P type.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1982-04-02 | 1982-10-02 | 1983-04-03 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1986-04-02 | 1986-10-02 | 1987-04-03 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1990-04-02 | 1990-10-02 | 1991-04-03 | $7700.00 | Window Closed / Lapsed |