Abstract When the junction field effect transistor is irradiated by ionizing radiations from a radioactive material or a particle accelerator, defect centers are generated in the depletion layer near the channel layer. The defect centers introduce additional electron states in the forbidden gap of the semiconductor and these additional states cause a great increase of the noise voltage in the junction field effect transistor. The amount of ionizing radiations irradiated to the transistor is directly in proportion to the change of the square of the noise voltage caused by the defect centers. On the basis of this relationship, the dose of the irradiated ionizing radiation can be measured by finding the amount of this change in the square of noise voltage before and after irradiation of the ionizing radiation to the transistor.
Inventors
👤 Takio Tomimasu
👤 Mitukuni Chiwaki
Bibliographic Details
Application Number—
JurisdictionUS
Data Sourcegoogle_patents
Last Synchronized2026-10-25 14:48
CPC Classifications
G; G01; G01T; G01T1/00; G01T1/16; G01T1/24
Claims Analysis
Total Claims: 4
Claim 1
Independent Claim
64 words
A device for the measurement of ionizing radiation dose, which comprises, in combination, a junction field effect transistor to be irradiated by ionizing radiation under test, means for applying an input signal to said junction field effect transistor, means for detecting the noise voltage generated consequently by said junction field effect transistor, and means for squaring the number of the noise voltage thus detected.
Claim 2
Independent Claim
64 words
A device for the measurement of ionizing radiation dose, which comprises, in combination, a junction field effect transistor to be irradiated by ionizing radiation under test, means for applying an input signal to said junction field effect transistor, means for detecting the noise voltage generated consequently by said junction field effect transistor, and means for squaring the number of the noise voltage thus detected.
Claim 3
Dependent Claim
28 words
The device according to claim 1, wherein said junction field effect transistor generates a noise voltage of several nV or less in the frequency zone of 1 KHz.
Claim 4
Dependent Claim
32 words
The device according to claim 1, wherein the terminals of the junction field effect transistor are in a grounded state while the junction field effect transistor is irradiated by the ionizing radiation.