US4142288A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method for contacting contact areas located on semiconductor bodies
Assignee: Telefunken Electronic GmbH
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Filing: 1977-02-24
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Granted: 1979-03-06
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Expires: 1997-02-24
Abstract
Abstract A method of contacting metallic contact areas located on semiconductor bodies comprises passing wires through capillary openings into contact with the connecting contacts and fixing them thereto, severing the wires at predetermined distance from the contact areas and bending the separated wires to enable them to be connected to further connecting parts. The invention also includes a device suitable for carrying out this method.
Inventors
- 👤 Wieland Flammer
- 👤 Roland Weber
- 👤 Gerhard Weiher
- 👤 Jakob Troner
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-25 13:29
CPC Classifications
H; H10; H10W; H10W72/00; H10W72/071; H10W72/075; H10W72/0711; H10W72/07141; H10W72/073; H10W72/07521; H10W72/07531; H10W72/07532; H10W72/50; H10W72/531; H10W72/536; H10W72/541; H10W72/5449; H10W72/551; H10W72/552; H10W72/5522; H10W72/851; H10W72/874; H10W72/884; H10W90/00; H10W90/701; H10W90/731; H10W90/736; H10W90/751; H10W90/756; Y; Y10; Y10T; Y10T29/00; Y10T29/49; Y10T29/49002; Y10T29/49117; Y10T29/49204; Y10T29/49208
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
170 words
A method of contacting metallic contact areas located on semiconductor bodies by means of connecting wires each passed through a respective capillary, comprising the steps of: connecting at least the ends of two connecting wires passed through capillary openings to two metallic contact areas located on one surface of the semiconductor body by means of thermocompression; after connecting said connecting wires to said metallic contact areas, removing each capillary to a certain distance above said semiconductor surface; severing said wires by burning same below the capillary openings and at a desired distance from the metallic contact areas; passing a wedge between the pieces of wire connected to the metallic contact areas and projecting from said semiconductor surface, said wedge at the same time spreading out and bending the pieces of wire so that the free wire ends come into contact with associated prongs of a structured contact strip, and finally firmly connecting these free wire ends to said prongs by means of thermocompression with the aid of a pressure device.
Claim 2
Independent Claim
170 words
A method of contacting metallic contact areas located on semiconductor bodies by means of connecting wires each passed through a respective capillary, comprising the steps of: connecting at least the ends of two connecting wires passed through capillary openings to two metallic contact areas located on one surface of the semiconductor body by means of thermocompression; after connecting said connecting wires to said metallic contact areas, removing each capillary to a certain distance above said semiconductor surface; severing said wires by burning same below the capillary openings and at a desired distance from the metallic contact areas; passing a wedge between the pieces of wire connected to the metallic contact areas and projecting from said semiconductor surface, said wedge at the same time spreading out and bending the pieces of wire so that the free wire ends come into contact with associated prongs of a structured contact strip, and finally firmly connecting these free wire ends to said prongs by means of thermocompression with the aid of a pressure device.
Claim 3
Dependent Claim
25 words
A method as defined in claim 1, wherein spreading, bending and connecting of said wires to associated ones of said prongs takes place fully automatically.
Claim 4
Independent Claim
139 words
A method for connecting metal connecting contacts disposed on the surface of a semiconductor body with associated housing connecting members by means of connecting wires conducted through a capillary, comprising the steps of: simultaneously connecting the ends of at least two connecting wires brought through capillary openings to two respective metal contacts on the surface of a semiconductor body by thermocompression; after connecting of the connecting wires to the metal contacts, withdrawing the capillaries to a certain distance above the semiconductor surface; severing the wires below the capillary openings; spreading the wires connected to the metal contacts; simultaneously bending the spread wires so that the free wire ends come into contact with the associated housing connecting members; and thereafter firmly connecting said free wire ends, by thermocompression, to the housing connecting members with the aid of a pressure device.
Claim 5
Independent Claim
139 words
A method for connecting metal connecting contacts disposed on the surface of a semiconductor body with associated housing connecting members by means of connecting wires conducted through a capillary, comprising the steps of: simultaneously connecting the ends of at least two connecting wires brought through capillary openings to two respective metal contacts on the surface of a semiconductor body by thermocompression; after connecting of the connecting wires to the metal contacts, withdrawing the capillaries to a certain distance above the semiconductor surface; severing the wires below the capillary openings; spreading the wires connected to the metal contacts; simultaneously bending the spread wires so that the free wire ends come into contact with the associated housing connecting members; and thereafter firmly connecting said free wire ends, by thermocompression, to the housing connecting members with the aid of a pressure device.
Claim 6
Dependent Claim
38 words
A method as defined in claim 3 wherein said step of severing comprises burning the individual wires; and wherein said steps of separating and bending are carried out simultaneously by passing a wedge between the projecting wire pieces.
Claim 7
Dependent Claim
26 words
A method as defined in claim 4 wherein said wedge is passed between said wires in a direction parallel to the surface of the semiconductor surface.
Claim 8
Dependent Claim
21 words
A method as defined in claim 3 wherein said step of separating is carried out simultaneously with said step of withdrawing.
Claim 9
Dependent Claim
72 words
A method as defined in claim 3, wherein connection of said wires to said metallic contact areas of the semiconductor body is carried out in a first arrangement at the same time as spreading and bending of said wires is carried out in a second arrangement and at the same time as connection of said wires to said connecting parts is carried out in a third arrangement in three adjacent operating positions.
Claim 10
Independent Claim
148 words
A method of connecting contact areas located on semiconductor bodies to associated housing connecting members by means of connecting wires comprising: passing a respective connecting wire through each of a pair of capillary openings in a bonding tool; simultaneously connecting said wires to respective contact areas on the upper surface of a semiconductor body by thermocompression using said bonding tool; raising said bonding tool a desired distance from said surface of said semiconductor body; severing said wires below said capillary openings and at a predetermined distance from said semiconductor body to provide two vertically extending wires connected to said respective contact areas; spreading said vertically extending wires and simultaneously bending same to cause the free ends of said vertically extending wires to come into contact with associated housing connection members; and bonding said free ends to said associated housing connection members by thermocompression, using a further bonding tool.
Claim 11
Independent Claim
148 words
A method of connecting contact areas located on semiconductor bodies to associated housing connecting members by means of connecting wires comprising: passing a respective connecting wire through each of a pair of capillary openings in a bonding tool; simultaneously connecting said wires to respective contact areas on the upper surface of a semiconductor body by thermocompression using said bonding tool; raising said bonding tool a desired distance from said surface of said semiconductor body; severing said wires below said capillary openings and at a predetermined distance from said semiconductor body to provide two vertically extending wires connected to said respective contact areas; spreading said vertically extending wires and simultaneously bending same to cause the free ends of said vertically extending wires to come into contact with associated housing connection members; and bonding said free ends to said associated housing connection members by thermocompression, using a further bonding tool.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1982-03-05 | 1982-09-04 | 1983-03-06 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1986-03-05 | 1986-09-04 | 1987-03-06 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1990-03-05 | 1990-09-04 | 1991-03-06 | $7700.00 | Window Closed / Lapsed |