US4142202A — Multi-layer metal connecting contact and method f…

Claim 1

Independent Claim 124 words

A multi-layer metal connecting contact which is disposed on a semiconductor body, and in which at least one layer comprises gold wherein: a first gold layer is arranged directly on a portion of said semiconductor body, which portion is of a certain conductivity type; said first gold layer is covered by a second gold layer which contains an impurity material which produces said certain type of conductivity in the semiconductor material of said semiconductor body; said second gold layer is covered by a third gold layer; and a metal layer sequence of nickel and silver, of chromium and silver, or of titanium, palladium and silver is arranged on said third gold layer with the silver layer being the outer layer of said connecting contact.

Claim 2

Dependent Claim 124 words

A multi-layer metal connecting contact which is disposed on a semiconductor body, and in which at least one layer comprises gold wherein: a first gold layer is arranged directly on a portion of said semiconductor body, which portion is of a certain conductivity type; said first gold layer is covered by a second gold layer which contains an impurity material which produces said certain type of conductivity in the semiconductor material of said semiconductor body; said second gold layer is covered by a third gold layer; and a metal layer sequence of nickel and silver, of chromium and silver, or of titanium, palladium and silver is arranged on said third gold layer with the silver layer being the outer layer of said connecting contact.

Claim 3

Dependent Claim 42 words

A contact as defined in claim 1, wherein said impurity material contained in said second gold layer is taken from the group consisting of antimony, phosphorous and arsenic to enable said contact to be used for an n-conductive semiconductor region or body.

Claim 4

Dependent Claim 22 words

A contact as defined in claim 1, wherein said second gold layer contains said impurity material in a proportion of approximately 1%.

Claim 5

Dependent Claim 69 words

A method of manufacturing a metal connecting contact as defined in claim 7, wherein said gold layers are vapour deposited on to said portion of said semiconductor body one after the other; wherein thereafter said semiconductor body is heated at said temperature which lies above the eutectic temperature of said gold and said semiconductor material; and wherein finally the remaining metal layers are vapour deposited onto said gold layers.

Claim 6

Dependent Claim 65 words

A method as defined in claim 4, wherein after vapour depositing said gold layers on to parts of said semiconductor body, glass passivation layers are applied at temperatures between 500° and 700° C.; wherein thereafter a thick silver layer is electrolitically deposited at a further region of said semiconductor body; and wherein thereafter the said remaining layers are vapour deposited on to said gold layers.

Claim 7

Dependent Claim 15 words

A contact as defined in claim 1 wherein said semiconductor body is made of silicon.

Claim 8

Independent Claim 123 words

A method of manufacturing a metal connecting contact for a portion of a semiconductor body which is of a certain conductivity type, comprising the steps of: depositing a first layer of gold directly on said portion of the semiconductor body; covering said first gold layer with a second gold layer which contains an impurity material which produces said certain types of conductivity in the semiconductor material of the semiconductor body; covering said second gold layer with a third gold layer; covering said gold layers with sequential metal layers of nickel and silver, of chromium and silver, or of titanium, palladium and silver; and heating the semiconductor body to a temperature which lies above the eutectic temperature of said gold and said semiconductor material.

Claim 9

Independent Claim 123 words

A method of manufacturing a metal connecting contact for a portion of a semiconductor body which is of a certain conductivity type, comprising the steps of: depositing a first layer of gold directly on said portion of the semiconductor body; covering said first gold layer with a second gold layer which contains an impurity material which produces said certain types of conductivity in the semiconductor material of the semiconductor body; covering said second gold layer with a third gold layer; covering said gold layers with sequential metal layers of nickel and silver, of chromium and silver, or of titanium, palladium and silver; and heating the semiconductor body to a temperature which lies above the eutectic temperature of said gold and said semiconductor material.

Claim 10

Dependent Claim 16 words

A metal connecting contact for a semiconductor body formed according to the process of claim 7.

Claim 11

Dependent Claim 15 words

A semiconductor contact for a semiconductor body formed according to the process of claim 4.

Annuity Stage	Window Opens	Payment Deadline	Surcharge Period Until	Estimated Fee	Status
3.5 Years (Year 4)	1982-02-26	1982-08-28	1983-02-27	$2000.00	Window Closed / Lapsed
7.5 Years (Year 8)	1986-02-26	1986-08-28	1987-02-27	$3760.00	Window Closed / Lapsed
11.5 Years (Year 12)	1990-02-26	1990-08-28	1991-02-27	$7700.00	Window Closed / Lapsed

Multi-layer metal connecting contact and method for making it

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