US4141780A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Optically monitoring the thickness of a depositing layer
Assignee: RCA Corp
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Filing: 1977-12-19
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Granted: 1979-02-27
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Expires: 1997-12-19
Abstract
Abstract A method of optically monitoring the thickness of a layer of material being deposited on a substrate within a reaction chamber comprises forming on a body a diffraction grating profile, exposing the grating profile to a beam of light while depositing the material on both the substrate and the grating profile, whereby the grating profile functions as a relief pattern diffracting the light beam into diffracted beams of various orders, measuring the intensity of the first order (I 1 ) and second order (I 2 ) beams to obtain a ratio signal (I 2 /I 1 ), and then transmitting the ratio signal to processing means for determining the aspect groove width of the relief pattern, whereby the thickness of the depositing layer is determined from a pre-established relationship dependent upon the aspect groove width.
Inventors
- 👤 Hans P. Kleinknecht
- 👤 James Kane
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-25 17:10
CPC Classifications
G; G01; G01B; G01B11/00; G01B11/02; G01B11/06; G01B11/0616; G01B11/0675
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
192 words
A method of optically monitoring the thickness of a layer of material being deposited on a substrate within a reaction chamber comprising the steps of: forming on a body a diffraction grating profile having an aspect groove width A o and a periodicity d, exposing said diffraction grating profile to a beam of monochromatic light while depositing said material on both said substrate and said diffraction grating profile within said reaction chamber, whereby said diffraction grating profile, including the material deposited thereon, functions as a relief pattern, diffracting said beam of monochromatic light into diffracted beams of various orders, said relief pattern having a changing aspect groove width A, measuring the intensity of the first order beam ( I 1) and the second order beam ( I 2) to obtain a ratio signal ( I 2/I 1 ) comprising the second order beam intensity divided by the first order beam intensity, transmitting said ratio signal ( I 2/I 1 ) to processing means for determining said aspect groove width A, whereby the thickness T of said layer being deposited is determined from a pre-established relationship dependent upon the aspect groove width A.
Claim 2
Independent Claim
192 words
A method of optically monitoring the thickness of a layer of material being deposited on a substrate within a reaction chamber comprising the steps of: forming on a body a diffraction grating profile having an aspect groove width A o and a periodicity d, exposing said diffraction grating profile to a beam of monochromatic light while depositing said material on both said substrate and said diffraction grating profile within said reaction chamber, whereby said diffraction grating profile, including the material deposited thereon, functions as a relief pattern, diffracting said beam of monochromatic light into diffracted beams of various orders, said relief pattern having a changing aspect groove width A, measuring the intensity of the first order beam ( I 1) and the second order beam ( I 2) to obtain a ratio signal ( I 2/I 1 ) comprising the second order beam intensity divided by the first order beam intensity, transmitting said ratio signal ( I 2/I 1 ) to processing means for determining said aspect groove width A, whereby the thickness T of said layer being deposited is determined from a pre-established relationship dependent upon the aspect groove width A.
Claim 3
Dependent Claim
85 words
A method as recited in claim 1 wherein said diffraction grating profile is a rectangular relief pattern whereby said aspect groove width A is equal approximately to A o minus 2T, T being the thickness of said depositing layer, and wherein said processing means for determining said aspect groove width A utilizes the approximation A = d/π cos -1 √ I 2/I 1 , whereby said thickness T at a particular point in time is determined from the relationship T = (A o - A)/2.
Claim 4
Dependent Claim
68 words
A method as recited in claim 2 wherein said body comprises a portion of said substrate, and wherein said forming step is performed by photolithographically masking a surface of said substrate and etching rectangular grooves therein, said grooves having a periodicity d and a groove width A o having a value at least twice as large as the value of the thickness of said layer being optically monitored.
Claim 5
Dependent Claim
30 words
A method as recited in claim 3 wherein said beam of monochromatic light strikes said rectangular relief pattern uniformly at an angle acute to the plane of said relief pattern.
Claim 6
Dependent Claim
31 words
A method as recited in claim 4 wherein said measuring step is performed by utilizing photodetectors placed respectively at angular positions to receive said first order and said second order beams.
Claim 7
Dependent Claim
14 words
A method as recited in claim 5 wherein said photodetectors are silicon PIN diodes.
Claim 8
Dependent Claim
17 words
A method as recited in claim 1 wherein said beam of monochromatic light is a laser beam.
Claim 9
Dependent Claim
25 words
A method as recited in claim 1 wherein said substrate is a silicon wafer and wherein said depositing layer is an epitaxial layer of silicon.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1982-02-26 | 1982-08-28 | 1983-02-27 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1986-02-26 | 1986-08-28 | 1987-02-27 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1990-02-26 | 1990-08-28 | 1991-02-27 | $7700.00 | Window Closed / Lapsed |