Abstract A method of preparing doped single crystals of cadmium telluride in a single ampoule accommodating a graphite container provided with an opening. Cadmium and a dopant are directly placed in the ampoule, and tellurium is placed in the graphite container. The ampoule is heated at a temperature at which cadmium vapors are formed to penetrate through the opening, together with vapors of the dopant, into the graphite container wherein they react with tellurium vapors and melt to form cadmium telluride. As the temperature grows higher, cadmium telluride is converted into melt which is then subjected to directive crystallization. The resulting crystal is cooled at a rate not exceeding 15° per hour. The crystals thus obtained have the following properties: Lifetime of electron-hole combination τ -- up to 3×10 -6 s; Electric resistivity ρ -- up to 10 10 Ohm. cm Concentration of charge carriers less than 10 8 cm -3 . This invention can be used in the manufacture of gamma ray detectors, IR-radiation modulators and CO 2 laser windows.
Method of preparing doped single crystals of cadmium telluride, which comprises placing tellurium in a graphite container provided with an opening at the top thereof, inserting the container into a quartz ampoule containing cadmium and a chlorine doping element, the quantity of cadmium in the ampoule exceeding that stoichiometrically required for the synthesis of cadmium telluride, evacuating the ampoule, sealing the same and heating at a temperature sufficient for the formation of vapours of cadmium and of the doping element in the ampoule and for the melting of tellurium in the graphite container, whereby as the temperature increases the resulting cadmium vapours penetrate through said opening together with vapours of the doping element and into the inner space of the graphite container to react therein with the vapours and melt of tellurium, thus forming doped cadmium telluride which is converted into liquid phase at the melting point thereof, and subjecting said doped cadmium telluride to directive crystallization at a partial pressure of the vapours of the excess cadmium of from 0.5 to 2 atm with subsequent cooling of the ampoule containing the resulting crystal at a rate not exceeding 15° per hour whereby the resulting crystal has a chlorine doping concentration of 10 15 to 10 20 atoms per cubic centimeter.
Claim 2
Dependent Claim
211 words
Method of preparing doped single crystals of cadmium telluride, which comprises placing tellurium in a graphite container provided with an opening at the top thereof, inserting the container into a quartz ampoule containing cadmium and a chlorine doping element, the quantity of cadmium in the ampoule exceeding that stoichiometrically required for the synthesis of cadmium telluride, evacuating the ampoule, sealing the same and heating at a temperature sufficient for the formation of vapours of cadmium and of the doping element in the ampoule and for the melting of tellurium in the graphite container, whereby as the temperature increases the resulting cadmium vapours penetrate through said opening together with vapours of the doping element and into the inner space of the graphite container to react therein with the vapours and melt of tellurium, thus forming doped cadmium telluride which is converted into liquid phase at the melting point thereof, and subjecting said doped cadmium telluride to directive crystallization at a partial pressure of the vapours of the excess cadmium of from 0.5 to 2 atm with subsequent cooling of the ampoule containing the resulting crystal at a rate not exceeding 15° per hour whereby the resulting crystal has a chlorine doping concentration of 10 15 to 10 20 atoms per cubic centimeter.