Method of manufacture of zener diodes

Claim 2

The process of manufacture of a zener diode having a predetermined reverse voltage (V) comprising the steps of measuring the resistivity (ρ) of a semiconducting body which is to receive a zener diode junction therein, and diffusing impurity atoms into said body at a constant temperature and for a time (T) where said time (T) is determined from the relation: V = k √ρ ∜T where k is a constant.

Claim 3

The process of claim 1 wherein said body is initially of a p-type conductivity and wherein said impurity atoms diffused into said body are donor type atoms.

Claim 4

The process of making a p -n junction in a semiconductor body, which junction has a predetermined breakdown voltage within plus or minus about 5%, comprising the steps of measuring the resistivity of the semiconducting body before the formation of said p-n junction; and then diffusing impurity atoms into said body at a constant temperature for a controlled length of time such that said predetermined breakdown voltage is proportional to the product of the square root of the measured resistivity and the fourth root of the diffusion time.

Claim 5

The process of making a p -n junction in a semiconductor body, which junction has a predetermined breakdown voltage within plus or minus about 5%, comprising the steps of measuring the resistivity of the semiconducting body before the formation of said p-n junction; and then diffusing impurity atoms into said body at a constant temperature for a controlled length of time such that said predetermined breakdown voltage is proportional to the product of the square root of the measured resistivity and the fourth root of the diffusion time.

Claim 6

The process of making a p-n junction in a semiconductor body which has a predetermined breakdown voltage within plus or minus about 5%, comprising the steps of measuring the resistivity of the semiconducting body before the formation of said p-n junction; and then diffusing impurity atoms into said body at a constant temperature and varying the diffusion time such that: ∜T = (V/k√ρ) where T is diffusion time, V is said predetermined breakdown voltage, ρ is said resistivity, and k is a constant.

Claim 7

The process of making a p-n junction in a semiconductor body which has a predetermined breakdown voltage within plus or minus about 5%, comprising the steps of measuring the resistivity of the semiconducting body before the formation of said p-n junction; and then diffusing impurity atoms into said body at a constant temperature and varying the diffusion time such that: ∜T = (V/k√ρ) where T is diffusion time, V is said predetermined breakdown voltage, ρ is said resistivity, and k is a constant.

Claim 8

The process of claim 1 wherein said constant k is determined by processing semiconducting bodies of pre-measured resistivities for measured times T until a device is produced having said predetermined reverse voltage V wherein said last-mentioned device had an initial measured resistivity ρ 1 and was diffused for a measured time T 1 .

Claim 9

The process of claim 5 wherein the diffusion time T x for subsequently produced wafers made by the same process apparatus which produced said device is determined by measuring their resistivities ρ x and by determining their diffusion time T x from the relation: T.sub.x = (ρ.sub.1 /ρ.sub.x) .sup.2 T.sub.1.

Claim 10

The process of claim 4 wherein said constant k is determined by processing semiconducting bodies of pre-measured resistivities for measured times T until a device is produced having said predetermined reverse voltage V and which had an initial resistivity ρ 1 and was diffused for a time T 1 .

Claim 11

The process of claim 7 wherein the diffusion time T x for subsequently produced wafers is determined by measuring their resistivities ρ x and by determining their diffusion times T x from the relation: T.sub.x = (ρ.sub.1 /ρ.sub.x).sup.2 T.sub.1.

Claim 12

The process of producing a zener diode having a given reverse breakdown voltage V within a given tolerance range; said process comprising the steps of measuring the resistivity ρ 1 of a first wafer of monocrystalline semiconductor material, and diffusing a junction into said first wafer at a constant temperature and for a time T 1 sufficient to produce the reverse breakdown voltage V; and thereafter measuring the resistivity ρ 2 of a second wafer of monocrystalline material, and diffusing a junction into said second wafer at said constant temperature and for a time T 2 to produce said reverse breakdown voltage V in said second wafer, where the time T 2 is determined by: T.sub.2 = (ρ.sub.1 /ρ.sub.2).sup.2 T.sub.1.

Claim 13

The process of producing a zener diode having a given reverse breakdown voltage V within a given tolerance range; said process comprising the steps of measuring the resistivity ρ 1 of a first wafer of monocrystalline semiconductor material, and diffusing a junction into said first wafer at a constant temperature and for a time T 1 sufficient to produce the reverse breakdown voltage V; and thereafter measuring the resistivity ρ 2 of a second wafer of monocrystalline material, and diffusing a junction into said second wafer at said constant temperature and for a time T 2 to produce said reverse breakdown voltage V in said second wafer, where the time T 2 is determined by: T.sub.2 = (ρ.sub.1 /ρ.sub.2).sup.2 T.sub.1.

Claim 14

The process of manufacture of a zener diode having a given breakdown voltage wherein a junction is diffused into wafers of semiconductor material at constant temperature for a given diffusion time and wherein, when the initial resistivity of wafers being diffused is changed from ρ 1 to ρ 2 , the diffusion time T 1 used to diffuse wafers of resistivity ρ 1 is changed to a time T 2 wherein: T.sub.2 = (ρ.sub.1 /ρ.sub.2).sup.2 T.sub.1.

Claim 15

The process of manufacture of a zener diode having a given breakdown voltage wherein a junction is diffused into wafers of semiconductor material at constant temperature for a given diffusion time and wherein, when the initial resistivity of wafers being diffused is changed from ρ 1 to ρ 2 , the diffusion time T 1 used to diffuse wafers of resistivity ρ 1 is changed to a time T 2 wherein: T.sub.2 = (ρ.sub.1 /ρ.sub.2).sup.2 T.sub.1.