US4137122A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of manufacturing a semiconductor device
Assignee: US Philips Corp
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Filing: 1977-05-11
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Granted: 1979-01-30
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Expires: 1997-05-11
Abstract
Abstract The invention relates to a method of manufacturing a semiconductor device in which a compound consisting of at least two semiconductor materials and having an energy gap which is smaller than that of a substrate is deposited epitaxially on the substrate. According to the invention, the composition of the mixture is determined during the deposition by means of measurement of the thermal emission.
Inventors
- 👤 Gerard A. Acket
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-02 22:45
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/20; H10P14/29; H10P14/2901; H10P14/2907; H10P14/2909; H10P14/24; H10P14/32; H10P14/3202; H10P14/3214; H10P14/3218; H10P14/3242; H10P14/3244; H10P14/3254; H10P14/34; H10P14/3402; H10P14/3414; H10P14/3418; H10P14/3421; Y; Y10; Y10S; Y10S148/00; Y10S148/102; Y10S148/162
Claims Analysis
Total Claims: 3
Claim 1
Independent Claim
72 words
A method of manufacturing a semiconductor device which comprises the steps of: providing a semiconductor substrate; epitaxially depositing on said substrate a compound comprising at least two semiconductor materials and having an energy gap which is smaller than that of the substrate; measuring the thermal emission spectrum of the epitaxially deposited compound during deposition; and controlling the composition of said compound during deposition as a function of its measured thermal emission spectrum.
Claim 2
Independent Claim
72 words
A method of manufacturing a semiconductor device which comprises the steps of: providing a semiconductor substrate; epitaxially depositing on said substrate a compound comprising at least two semiconductor materials and having an energy gap which is smaller than that of the substrate; measuring the thermal emission spectrum of the epitaxially deposited compound during deposition; and controlling the composition of said compound during deposition as a function of its measured thermal emission spectrum.
Claim 3
Dependent Claim
21 words
A method of manufacturing a semiconductor device as in claim 1, wherein the epitaxially deposited compound comprises a direct semiconductor material.
References Cited (Backward Citations)
US3322575A
Cited
US3099579A
Cited
US3436549A
Cited
US3524776A
Cited
US3647581A
Cited
US3620814A
Cited
US3696262A
Cited
US3745834A
Cited
US4018566A
Cited
US4024291A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1982-01-29 | 1982-07-31 | 1983-01-30 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1986-01-29 | 1986-07-31 | 1987-01-30 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1990-01-29 | 1990-07-31 | 1991-01-30 | $7700.00 | Window Closed / Lapsed |