US4136352A
Expired / Lapsed
US
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Field-effect structures
Assignee: Thales SA
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Filing: 1976-10-08
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Granted: 1979-01-23
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Expires: 1996-10-08
Abstract
Abstract A junction-type field-effect structure has an active layer covered at least in part by a dielectric layer. A metal base is applied to the dielectric layer.
Inventors
- 👤 Paul C. Moutou
- 👤 Pierre Gibeau
- 👤 Jean-Pascal Duchemin
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-02 10:44
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/80; H10D30/87; H10D30/875; H10D30/83; H10D30/832; H10D30/873; H10D64/00; H10D64/20; H10D64/27; H10D64/311; H10D64/411; H10W; H10W40/00; H10W40/10; H10W72/00; H10W72/30; H10W95/00; H10W72/071; H10W72/073; H10W72/07331; H10W72/07337
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
74 words
A junction type filed effect transistor comprising a semi-conductive layer, a source and a drain electrode upon one and the same face of said layer a gate electrode forming a rectifying junction with said layer between said source and said drain and covering at least partly the other face of said layer, a dielectric layer, and a metal layer forming a substrate for said transistor and covering said other face and said dielectric layer.
Claim 2
Dependent Claim
74 words
A junction type filed effect transistor comprising a semi-conductive layer, a source and a drain electrode upon one and the same face of said layer a gate electrode forming a rectifying junction with said layer between said source and said drain and covering at least partly the other face of said layer, a dielectric layer, and a metal layer forming a substrate for said transistor and covering said other face and said dielectric layer.
Claim 3
Dependent Claim
22 words
A structure as claimed in claim 1, wherein a window is formed in said dielectric layer between said source and said drain.
Claim 4
Dependent Claim
27 words
A structure as claimed in claim 2, wherein said metal layer forms in said window a rectifying contact with said semi-conducting layer, and constitutes a control gate.
Claim 5
Dependent Claim
27 words
A structure as claimed in claim 2, wherein a control gate is deposited in said window, said metal layer forming with said control gate an ohmic contact.
Claim 6
Dependent Claim
20 words
A structure as claimed in claim 2, wherein a control gate is deposited upon said one face, facing said window.
Claim 7
Independent Claim
80 words
A method of manufacturing a junction-type field-effect structure characterized by the following stages: (a) deposition of a semiconductor layer on a substrate; (b) deposition of a dielectric layer on said layer; (c) deposition of a metal layer on said dielectric layer; (d) removal of said substrate by chemical or mechanical machining in order to bare said semiconductor layer; (e) deposition of the source and drain electrodes on the face exposed after the elimination of the substrate from said active layer.
Claim 8
Independent Claim
80 words
A method of manufacturing a junction-type field-effect structure characterized by the following stages: (a) deposition of a semiconductor layer on a substrate; (b) deposition of a dielectric layer on said layer; (c) deposition of a metal layer on said dielectric layer; (d) removal of said substrate by chemical or mechanical machining in order to bare said semiconductor layer; (e) deposition of the source and drain electrodes on the face exposed after the elimination of the substrate from said active layer.
Claim 9
Dependent Claim
49 words
A method as claimed in claim 6, comprising prior to the deposition of said metal layer the formation of a window in said dielectric layer in order to place said metal layer and said semiconductor layer in direct contact with one another, the two layers forming a rectifying contact.
Claim 10
Dependent Claim
48 words
A method as claimed in claim 6, characterized by the formation of a window in said dielectric layer, the formation in said window of a second semiconducting layer forming a rectifying contact with said semiconductor layer, said second layer constituting one of the control gates of the structure.
References Cited (Backward Citations)
US4062036A
Cited
US3986196A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1982-01-22 | 1982-07-24 | 1983-01-23 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1986-01-22 | 1986-07-24 | 1987-01-23 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1990-01-22 | 1990-07-24 | 1991-01-23 | $7700.00 | Window Closed / Lapsed |