Selenium-base photosensitive materials for electrophotography having super-finished substrate

Claim 2

Improvement in an electrophotographic element comprising an electrically conductive metal substrate having a surface coated with and completely covered by a photoconductive layer of photoconductive selenium or photoconductive selenium alloy, wherein the improvement consists of: the roughness of said surface of said substrate is in the range of from about 0.3 to about 2.0 microns and said surface of said substrate is free of long periodical undulations, said substrate having been prepared by superfinishing said surface of said substrate.

Claim 3

An electrophotographic element as claimed in claim 1 wherein said photoconductive layer comprises a member selected from the group consisting of selenium, selenium-tellurium alloy, selenium-arsenic alloy, and selenium-tellurium-arsenic alloy.

Claim 4

An electrophotographic element as claimed in claim 1 wherein said substrate comprises a member selected from the group consisting of aluminum, stainless steel and brass.

Claim 5

An electrophotographic element as claimed in claim 1 wherein said substrate comprises aluminum-manganese alloy.

Claim 6

An electrophotographic element as claimed in claim 1 wherein the surface of said photoconductive layer is protected with an overcoat layer.

Claim 7

An electrophotographic element as claimed in claim 1 in which the superfinishing is performed by applying to said surface of said substrate a superfinishing grinding stone under a pressure of 0.8 ± 0.1 Kg/cm 2 , vibrating said grinding stone at a rate of 2000 to 2500 cycles per minute at an amplitude of 1.5 to 2.5 mm, rotating said grinding stone at 200 to 250 rpm and moving said grinding stone at a rate of 250 to 350 mm/min relative to said surface of said substrate while applying a superfinishing grinding liquid to said surface of said substrate.

Claim 8

An electrophotographic element as claimed in claim 1 in which said substrate has the composition Cu: up to 0.2 wt. % Si: up to 0.6 wt. % Fe: up to 0.7 wt. % Mn: 1.0 to 1.5 wt. % Zn: up to 0.1 wt. % Al: balance.

Claim 9

An electrophotographic element as claimed in claim 1 in which the thickness of said photoconductive layer is from about 30 to about 80 microns.

Claim 10

An electrophotographic element as claimed in claim 1 which possesses a surface electric potential of more than 1250 V and a dark decay of more than 0.80, wherein surface electric potential (Vs) is the potential of the surface of said photoconductive layer after charging same at +5.7 KV corona discharge voltage for 20 seconds and dark decay is Vo/Vs wherein Vo is the surface electric potential of said surface of said photoconductive layer after said surface has stood in the dark for 20 seconds after terminating said corona discharge voltage.