Submicron beta silicon carbide powder and sintered articles of high density prepared therefrom

Claim 2

A process for preparing boron doped submicron beta silicon carbide powder having from traces to less than one weight percent alpha silicon carbide, capable of being pressure-less sintered to articles having a density of at least 85 percent of the theoretical density for silicon carbide, by gas phase reaction of silicon, boron and carbon source reactants in the presence of hydrogen in a reactor, which comprises projecting a hot stream of hydrogen produced by heating hydrogen in hydrogen plasma generating means into a reaction zone in a recirculating-type reactor, introducing gaseous silane, boron source and halogenated hydrocarbon source reactants into said reaction zone, said boron source reactant being present in amount sufficient to provide between 0.15 and 4 weight percent boron in the silicon carbide powder, the halogenated hydrocarbon source reactant being present in an amount sufficient to provide between 0.05 and 1.5 weight percent free carbon in the silicon carbide powder, and the heat content of the hot hydrogen stream and the reactants being sufficient to establish beta silicon carbide forming temperatures in said reaction zone, reacting said silane, boron source and halogenated hydrocarbon source reactants in the reaction zone in the presence of an excess of the theoretical demand for hydrogen, the apparent residence time of the reactants in the reactor being between about 0.05 and about 0.5 seconds, and removing said solid boron doped submicron beta silicon carbide powder having a surface area of between 3 and 15 square meters per gram from the reactor, at least 90 percent of the silicon carbide particles having an equivalent spherical diameter less than one micron.

Claim 3

The process of claim 1 whereinthe silane reactant is silicon tetrachloride and the boron source reactant is boron trichloride.

Claim 4

The process of claim 2 wherein the halogenated hydrocarbon source reactant is halogenated hydrocarbon containing from 1 to 12 carbon atoms.

Claim 5

The process of claim 2 wherein the principal source of heat for the reaction is the heated hydrogen gas stream and wherein the principal reaction zone temperature is between 2500° C. and 3500° C.

Claim 6

The process of claim 1 wherein the silane reactant is silicon tetrachloride, the boron source reactant is boron trichloride, the carbon source reactant is halogenated hydrocarbon containing from 1 to 8 carbon atoms, the mole ratio of hydrogen to silane reactant in the reactor is between about 20 and 40, and the silicon carbide powder removed from the reactor has a surface area of between 4 and 12 square meters per gram.

Claim 7

The process of claim 5 wherein the silicon carbide powder is capable of being pressure-less sintered to articles having a density of at least 90 percent of the theoretical density for silicon carbide and the boron source reactant is present in amount sufficient to provide between 0.17 and 4 weight percent boron in the silicon carbide powder.

Claim 8

A process for preparing boron doped submicron beta silicon carbide powder having from traces to less than one weight percent alpha silicon carbide by gas phase reaction of silicon, boron and carbon source reactants in the presence of hydrogen in a reactor, which comprises projecting a hot stream of hydrogen produced by heating hydrogen in hydrogen plasma generating means into a reaction zone in a recirculating-type reactor, introducing gaseous silane, boron source and carbon source reactant selected from the group consisting of hydrocarbons and halogenated hydrocarbons that are readily volatile at the gas phase reaction temperature into said reaction zone, said boron source reactant being present in amount sufficient to provide between 0.15 and 4 weight percent boron in the silicon carbide powder, the carbon source reactant being present in an amount sufficient to provide between 0.05 and 1.5 weight percent free carbon in the silicon carbide powder, and the heat content of the hot hydrogen stream and the reactants being sufficient to establish beta silicon carbide forming temperatures in said reaction zone, reacting said silane, boron source and carbon source reactants in the reaction zone in the presence of an excess of the theoretical demand for hydrogen, the apparent residence time of the reactants in the reactor being between about 0.05 and about 0.5 seconds, withdrawing from the reactor a reactor effluent comprising a gaseous suspension of solid silicon carbide particles, and separating from said reactor effluent solid boron doped submicron beta silicon carbide powder having from traces to less than one weight percent alpha silicon carbide, at least 90 percent of the silicon carbide particles having an equivalent spherical diameter less than one micron, which beta silicon carbide powder is capable of being pressureless sintered to articles having a density of at least 85 percent of the theoretical density for silicon carbide.

Claim 9

A process for preparing boron doped submicron beta silicon carbide powder having from traces to less than one weight percent alpha silicon carbide by gas phase reaction of silicon, boron and carbon source reactants in the presence of hydrogen in a reactor, which comprises projecting a hot stream of hydrogen produced by heating hydrogen in hydrogen plasma generating means into a reaction zone in a recirculating-type reactor, introducing gaseous silane, boron source and carbon source reactant selected from the group consisting of hydrocarbons and halogenated hydrocarbons that are readily volatile at the gas phase reaction temperature into said reaction zone, said boron source reactant being present in amount sufficient to provide between 0.15 and 4 weight percent boron in the silicon carbide powder, the carbon source reactant being present in an amount sufficient to provide between 0.05 and 1.5 weight percent free carbon in the silicon carbide powder, and the heat content of the hot hydrogen stream and the reactants being sufficient to establish beta silicon carbide forming temperatures in said reaction zone, reacting said silane, boron source and carbon source reactants in the reaction zone in the presence of an excess of the theoretical demand for hydrogen, the apparent residence time of the reactants in the reactor being between about 0.05 and about 0.5 seconds, withdrawing from the reactor a reactor effluent comprising a gaseous suspension of solid silicon carbide particles, and separating from said reactor effluent solid boron doped submicron beta silicon carbide powder having from traces to less than one weight percent alpha silicon carbide, at least 90 percent of the silicon carbide particles having an equivalent spherical diameter less than one micron, which beta silicon carbide powder is capable of being pressureless sintered to articles having a density of at least 85 percent of the theoretical density for silicon carbide.

Claim 10

The process of claim 7 wherein the silane reactant is silicon tetrachloride, the boron source reactant is boron trichloride, and the carbon source reactant contains from 1 to 12 carbon atoms..

Claim 11

The process of claim 7 wherein the boron doped submicron beta silicon carbide powder has a surface area of between 3 and 15 square meters per gram.

Claim 12

The process of claim 7 wherein the principal source of heat for the reaction is the heated hydrogen gas stream and the principal reaction zone temperature is between 2500° C. and 3500° C.

Claim 13

The process of claim 8 wherein the mole ratio of hydrogen to silane reactant in the reactor is between about 20 and 40, and the silicon carbide powder separated from the reactor effluent has a surface area of between 4 and 12 square meters per gram.