US4131697A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of coating carbon filaments with silicon carbide
Assignee: ARMINES
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Filing: 1977-09-12
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Granted: 1978-12-26
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Expires: 1997-09-12
Abstract
Abstract A coating of silicon carbide is formed on carbon filaments by passing the heated filaments into an atmosphere of hydrogen and silicon tetrachloride to deposit silicon, and then into a silicon carbide-forming atmosphere. Carbon filaments having a coating of silicon carbide up to 0.2 micron or over 10 microns thick are described.
Inventors
- 👤 Jean-Louis R. G. Randon
- 👤 Georges S. Slama
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-23 22:17
CPC Classifications
C; C04; C04B; C04B41/00; C04B41/009; C04B41/45; C04B41/4584; C23; C23C; C23C16/00; C23C16/22; C23C16/30; C23C16/32; C23C16/325; D; D01; D01F; D01F11/00; D01F11/10; D01F11/12; D01F11/126
Claims Analysis
Total Claims: 4
Claim 1
Independent Claim
112 words
A method of coating a carbon filament having a thickness of less than 50 microns with silicon carbide, which comprises passing the carbon filament heated by the Joule effect to a temperature of about 1350° C, into a first reactor containing gaseous silicon tetrachloride and hydrogen, the dwell time of the filament in the first reactor being less than 30 seconds, thereby forming a layer of silicon carbide having a thickness of less tha 0.2 micron, and then passing the filament heated to a temperature of at least 1100° C into a second reactor containing methyltrichlorosilane and hydrogen thereby producing a silicon carbide coating on the filament of at least ten microns.
Claim 2
Independent Claim
112 words
A method of coating a carbon filament having a thickness of less than 50 microns with silicon carbide, which comprises passing the carbon filament heated by the Joule effect to a temperature of about 1350° C, into a first reactor containing gaseous silicon tetrachloride and hydrogen, the dwell time of the filament in the first reactor being less than 30 seconds, thereby forming a layer of silicon carbide having a thickness of less tha 0.2 micron, and then passing the filament heated to a temperature of at least 1100° C into a second reactor containing methyltrichlorosilane and hydrogen thereby producing a silicon carbide coating on the filament of at least ten microns.
Claim 3
Dependent Claim
40 words
A method as claimed in claim 1, wherein the relative proportion of silicon tetrachloride in the hydrogen is about 30% by volume and the dwell time of the filament in the first reactor is of the order of 10 seconds.
Claim 4
Dependent Claim
45 words
A method as claimed in claim 1, wherein the temperature in the second reactor is about 1200° C; the walls of the second reactor are heated and the reactor is fed with a mixture containing about 0.34 molar parts of methyltrichlorosilane per mole of hydrogen.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1981-12-25 | 1982-06-26 | 1982-12-26 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1985-12-25 | 1986-06-26 | 1986-12-26 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1989-12-25 | 1990-06-26 | 1990-12-26 | $7700.00 | Window Closed / Lapsed |