US4131524A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Manufacture of semiconductor devices
Assignee: US Philips Corp
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Filing: 1971-07-29
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Granted: 1978-12-26
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Expires: 1991-07-29
Abstract
Abstract A method of manufacturing a semiconductor device comprising the steps of providing a plate-shaped semiconductor body, removing by spark erosion a first portion of the semiconductor body, and then using a selective etching process to remove only a second portion of the semiconductor body.
Inventors
- 👤 Antonous C. M. Gieles
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 01:36
CPC Classifications
H; H10; H10P; H10P95/00; H10P95/80; H10P50/00; H10P50/60; H10P50/61; H10P50/613; Y; Y10; Y10S; Y10S438/00; Y10S438/977
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
94 words
A method of manufacturing a semiconductor device comprising the steps of providing a plate-shaped semiconductor body of one conductivity type, forming a substantially continuous layer of semiconductor material of opposite conductivity type on a flat side of said body, forming at least one circuit element in said layer, providing electrical contacts to said circuit element, removing by spark erosion a first portion of the semiconductor body opposite said layer and short of said layer and then using a selective etching process to remove a second portion of the semiconductor body down to said layer.
Claim 2
Independent Claim
94 words
A method of manufacturing a semiconductor device comprising the steps of providing a plate-shaped semiconductor body of one conductivity type, forming a substantially continuous layer of semiconductor material of opposite conductivity type on a flat side of said body, forming at least one circuit element in said layer, providing electrical contacts to said circuit element, removing by spark erosion a first portion of the semiconductor body opposite said layer and short of said layer and then using a selective etching process to remove a second portion of the semiconductor body down to said layer.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1981-12-25 | 1982-06-26 | 1982-12-26 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1985-12-25 | 1986-06-26 | 1986-12-26 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1989-12-25 | 1990-06-26 | 1990-12-26 | $7700.00 | Window Closed / Lapsed |