US4128467A
Expired / Lapsed
US
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Method of ion etching Cd-Hg-Te semiconductors
Assignee: Telefunken Electronic GmbH
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Filing: 1978-02-24
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Granted: 1978-12-05
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Expires: 1998-02-24
Abstract
Abstract A method of etching comprises etching a cadmium-mercury-telluride semiconductor layer by means of an ion beam.
Inventors
- 👤 Konrad Fischer
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-23 23:23
CPC Classifications
H; H10; H10D; H10D62/00; H10D62/80; H10D62/86; H10D62/862; H10P; H10P34/00; H10P34/40
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
22 words
A method of ion beam etching in order to structure semiconductor layers, characterized by its use on a semiconductor material comprising cadmium-mercury-telluride.
Claim 2
Independent Claim
22 words
A method of ion beam etching in order to structure semiconductor layers, characterized by its use on a semiconductor material comprising cadmium-mercury-telluride.
Claim 3
Dependent Claim
19 words
A method as defined in claim 1, wherein said semiconductor material comprises Cd 0 .2 Hg 0 .8 Te.
Claim 4
Dependent Claim
33 words
A method as defined in claim 1 and comprising covering the parts of the semiconductor surface which are not to be etched by a material of lower etching rate than said cadmium-mercury-telluride material.
Claim 5
Dependent Claim
17 words
A method as defined in claim 3, wherein said material of lower etching rate comprises a photoresist.
Claim 6
Dependent Claim
16 words
A method as defined in claim 3, wherein said material of lower etching rate comprises titanium.
Claim 7
Dependent Claim
22 words
A method as defined in claim 1, wherein a beam of argon ions reaches the semiconductor surface perpendicularly in a high vacuum.
Claim 8
Dependent Claim
41 words
A method as defined in claim 1, and comprising arranging a thin semiconductor layer on a carrier member, and selectively removing portions of said semiconductor layer to a depth as far as said carrier member by means of an ion beam.
Claim 9
Independent Claim
17 words
A method of producing a structured semiconductor layer comprising etching a cadmium-mercury-telluride semiconductor with an ion beam.
Claim 10
Independent Claim
17 words
A method of producing a structured semiconductor layer comprising etching a cadmium-mercury-telluride semiconductor with an ion beam.
References Cited (Backward Citations)
US3860783A
Cited
US3988564A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1981-12-04 | 1982-06-05 | 1982-12-05 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1985-12-04 | 1986-06-05 | 1986-12-05 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1989-12-04 | 1990-06-05 | 1990-12-05 | $7700.00 | Window Closed / Lapsed |