US4127859A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Integrated circuit subsurface zener diode
Assignee: National Semiconductor Corp
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Filing: 1977-02-25
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Granted: 1978-11-28
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Expires: 1997-02-25
Abstract
Abstract A zener diode is incorporated into a conventional integrated circuit without changing the process. The structure employed produces a diode that breaks down in a subsurface region, thus avoiding the noise and instabilities that attend surface breakdown. An isolation diffusion is employed to make the anode and an NPN transistor emitter diffusion is employed to provide the cathode. If the emitter diffusion diameter is larger than the oxide cut used to achieve isolation predeposition and is concentric therewith, the resulting zener diode will have its breakdown region confined to under the emitter diffusion. The diode action is thereby remote from surface junction breakdown effects.
Inventors
- 👤 Carl T. Nelson
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 23:38
CPC Classifications
H; H10; H10D; H10D8/00; H10D8/20; H10D8/25; H10W; H10W10/00; H10W10/01; H10W10/031; H10W10/30
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
176 words
A zener diode fabricated in a semiconductor integrated circuit structure, said integrated circuit having a substrate of one conductivity type, an overlying epitaxial layer of the opposite conductivity type, isolation diffusion regions of said one conductivity type extending completely through said epitaxial layer and acting to isolate portions of said epitaxial layer, high conductivity buried layer regions of said opposite conductivity type located under selected areas of said epitaxial layer, base diffusion regions of said one conductivity type extending partly through said epitaxial layer, and emitter diffusion regions of said opposite conductivity type extending into said expitaxial layer to a lesser extent than said base diffusions, said zener diode comprising: a first region of said isolation diffusion extending through said epitaxial layer; a second region of said emitter diffusion located inside said first region whereby a peripheral portion of said first region is located outside of said second region; means for making an ohmic connection to said first region only in said peripheral portion thereof; and means for making an ohmic connection to said second region.
Claim 2
Dependent Claim
176 words
A zener diode fabricated in a semiconductor integrated circuit structure, said integrated circuit having a substrate of one conductivity type, an overlying epitaxial layer of the opposite conductivity type, isolation diffusion regions of said one conductivity type extending completely through said epitaxial layer and acting to isolate portions of said epitaxial layer, high conductivity buried layer regions of said opposite conductivity type located under selected areas of said epitaxial layer, base diffusion regions of said one conductivity type extending partly through said epitaxial layer, and emitter diffusion regions of said opposite conductivity type extending into said expitaxial layer to a lesser extent than said base diffusions, said zener diode comprising: a first region of said isolation diffusion extending through said epitaxial layer; a second region of said emitter diffusion located inside said first region whereby a peripheral portion of said first region is located outside of said second region; means for making an ohmic connection to said first region only in said peripheral portion thereof; and means for making an ohmic connection to said second region.
Claim 3
Dependent Claim
36 words
The zener diode of claim 1 further including a buried region of said opposite conductivity located under said epitaxial layer and substantially in registry with said first region whereby said diode is isolated from said substrate.
Claim 4
Dependent Claim
57 words
The zener diode of claim 1 wherein said ohmic connection to said first region includes a third region of isolation diffusion located adjacent to said first localized region so that the edges of said first and third regions overlap and said third region stops short of said second region, and a metal contact to said third region.
Claim 5
Dependent Claim
17 words
The zener diode of claim 3 wherein said third region forms a ring around said first region.
Claim 6
Dependent Claim
57 words
The zener diode of claim 1 wherein said ohmic connection to said first region includes a fourth region of said base diffusion located adjacent to said first region so that the edges of said first and fourth regions overlap and said fourth region stops short of said second region, and a metal contact to said fourth region.
Claim 7
Dependent Claim
14 words
The zener diode of claim 5 wherein said fourth region surrounds said first region.
References Cited (Backward Citations)
US3881179A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1981-11-27 | 1982-05-29 | 1982-11-28 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1985-11-27 | 1986-05-29 | 1986-11-28 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1989-11-27 | 1990-05-29 | 1990-11-28 | $7700.00 | Window Closed / Lapsed |