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US4126883A Expired / Lapsed US ⏱️ 0.0 years remaining

Pressure-mounted semiconductive structure

Assignee: Siemens AG
•
Filing: 1977-03-09
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Granted: 1978-11-21
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Expires: 1997-03-09
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Abstract

Abstract A semiconductive structure comprised of a semiconductive element, feed electrodes and other related components thereof, each provided with an aperture aligned with the aperture of the other elements and a single clamping bolt means positioned through the aperture of each component to align the components relative to one another and to exert pressure on the semiconductive component.

Inventors

  • 👤 Heinz Martin

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-10-28 14:00
CPC Classifications
H; H10; H10D; H10D62/00; H10D62/10; H10D62/117; H10W; H10W40/00; H10W40/40; H10W40/47; H10W40/60; H10W40/611; H10W78/00; H10W90/00; H10W40/625

Claims Analysis

Total Claims: 5
Claim 1
Independent Claim 162 words
In a semiconductor structure having a semiconductor component which can be subjected to pressure, the combination comprising: a heat-exchange body having a mounting aperture therein and having passages spaced from said mounting aperture for circulating a heat-exchange fluid therethrough; a pair of semiconductor elements positioned on opposing surfaces of said heat-exchange body, each of said semiconductor elements having a concentrically located mounting aperture therein aligned with said mounting aperture of said heat-exchange body; a pair of electrode means, each having a mounting aperture therein aligned with said mounting aperture of said heat-exchange body, each electrode means being positioned on a surface of a respective semiconductor element face away from said heat-exchange body and having a portion extending away from said semiconductor structure for electrical coupling to an electrical current source; and a clamping bolt means positioned within said apertures to align said semiconductor elements relative to said heat-exchange body and said electrode means and to exert a pressure on said semiconductor element.
Claim 2
Dependent Claim 162 words
In a semiconductor structure having a semiconductor component which can be subjected to pressure, the combination comprising: a heat-exchange body having a mounting aperture therein and having passages spaced from said mounting aperture for circulating a heat-exchange fluid therethrough; a pair of semiconductor elements positioned on opposing surfaces of said heat-exchange body, each of said semiconductor elements having a concentrically located mounting aperture therein aligned with said mounting aperture of said heat-exchange body; a pair of electrode means, each having a mounting aperture therein aligned with said mounting aperture of said heat-exchange body, each electrode means being positioned on a surface of a respective semiconductor element face away from said heat-exchange body and having a portion extending away from said semiconductor structure for electrical coupling to an electrical current source; and a clamping bolt means positioned within said apertures to align said semiconductor elements relative to said heat-exchange body and said electrode means and to exert a pressure on said semiconductor element.
Claim 3
Dependent Claim 17 words
A pressure-mounted semiconductive structure as defined in claim 1 wherein said semiconductor elements are connected in series.
Claim 4
Dependent Claim 19 words
A pressure-mounted semiconductive structure as defined in claim 1 wherein said semiconductor elements are connected opposite to one another.
Claim 5
Dependent Claim 89 words
In a semiconductor structure as defined in claim 1 wherein said electrode means comprises a pair of feed electrodes and a pair of contact leads, said feed electrodes and said contact leads each having a mounting aperture therein aligned with said mounting aperture of said heat-exchange body, each respective feed electrode being positioned on a surface of a respective semiconductor element facing away from said heat-exchange body and each respective contact lead being positioned on a surface of a respective feed electrode facing away from each respective semiconductor element.

References Cited (Backward Citations)

US2826725A Cited
US2852723A Cited
US3457474A Cited
US3532942A Cited
US3475660A Cited
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USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1981-11-20 1982-05-22 1982-11-21 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1985-11-20 1986-05-22 1986-11-21 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 1989-11-20 1990-05-22 1990-11-21 $7700.00 Window Closed / Lapsed

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