US4126880A
Expired / Lapsed
US
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Germanium-containing silicon nitride film
Assignee: Hitachi Ltd
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Filing: 1977-01-04
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Granted: 1978-11-21
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Expires: 1997-01-04
Abstract
Abstract A germanium-containing silicon nitride film has a germanium content of 0.5 to 10 atomic-% that of the silicon content. Since the film has a much smaller stress than a conventional silicon nitride (Si 3 N 4 ) film, it is very suitable as a mask for fabricating a semiconductor device and an insulating or a protective film for a semiconductor device.
Inventors
- 👤 Yoichi Tamaki
- 👤 Seiichi Isomae
- 👤 Masahiko Ogirima
- 👤 Akira Shintani
- 👤 Michiyoshi Maki
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 18:49
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/69; H10P14/692; H10P14/6921; H10P14/6928; H10P14/61; H10P14/63; H10P14/6302; H10P14/6304; H10P14/6306; H10P14/6308; H10P14/6309; H10P14/6326; H10P14/6328; H10P14/6334; H10P14/69215; H10P14/694; H10P14/6943; H10P14/69433; Y; Y10; Y10T; Y10T428/00; Y10T428/26; Y10T428/263; Y10T428/264; Y10T428/265
Claims Analysis
Total Claims: 18
Claim 1
Independent Claim
38 words
A germanium-containing silicon nitride film formed on a support surface, wherein the germanium content of said film is 0.5 to 10 atomic% of the silicon content and said film has a thickness of 400 A to 1 μm.
Claim 2
Dependent Claim
38 words
A germanium-containing silicon nitride film formed on a support surface, wherein the germanium content of said film is 0.5 to 10 atomic% of the silicon content and said film has a thickness of 400 A to 1 μm.
Claim 3
Dependent Claim
27 words
The germanium-containing silicon nitride film according to claim 1, whose composition is represented by Ge x Si 3-x N 4 , where 0.015 ≦ x ≦ 0.3.
Claim 4
Dependent Claim
23 words
The germanium-containing silicon nitride film according to claim 1, further comprising a second film which is deposited on said germanium-containing silicon nitride film.
Claim 5
Dependent Claim
18 words
The germanium-containing silicon nitride film according to claim 3, wherein said second film is a silicon nitride film.
Claim 6
Dependent Claim
29 words
The germanium-containing silicon nitride film according to claim 4, wherein the ratio between thicknesses of said silicon nitride film and said germanium-containing silicon nitride film is 1:1 to 2.
Claim 7
Dependent Claim
35 words
The germanium-containing silicon nitride film according to claim 4, wherein the thickness of said silicon nitride film is 500 to 1,000 A and that of said germanium-containing silicon nitride film is 400 to 2,000 A.
Claim 8
Dependent Claim
49 words
In a semiconductor device having a silicon nitride film disposed on the surface thereof, the improvement wherein said silicon nitride film has a germanium content of 0.5 to 10 atomic % of its silicon content and has a thickness lying in a range from 400 A to 1 μm.
Claim 9
Dependent Claim
49 words
In a semiconductor device having a silicon nitride film disposed on the surface thereof, the improvement wherein said silicon nitride film has a germanium content of 0.5 to 10 atomic % of its silicon content and has a thickness lying in a range from 400 A to 1 μm.
Claim 10
Dependent Claim
25 words
The improvement according to claim 7, wherein said film has the composition Ge x Si 3-x N 4 , where 0.015 ≦ x ≦ 0.3.
Claim 11
Dependent Claim
19 words
The improvement according to claim 7, wherein said germanium content is 1 to 4 atomic % that of silicon.
Claim 12
Dependent Claim
20 words
The improvement according to claim 7, further including a layer of silicon nitride formed on the germanium-containing silicon nitride film.
Claim 13
Dependent Claim
26 words
The improvement according to claim 10, wherein the ratio between thicknesses of said silicon nitride film and said germanium-containing silicon nitride film is 1:1 to 2.
Claim 14
Dependent Claim
32 words
The improvement according to claim 11, wherein the thickness of said silicon nitride film is 500 to 1,000 A and that of said germanium-containing silicon nitride film is 400 to 2,000 A.
Claim 15
Dependent Claim
69 words
In a method of manufacturing a semiconductor device wherein a layer of silicon is selectively masked and the exposed silicon is oxidized to form a silica layer, the improvement comprising the step of selectively masking said silicon layer with a masking layer of silicon nitride having a germanium content of 0.5 to 10 atomic % of its silicon content and having a thickness of 400 A to 1 μm.
Claim 16
Dependent Claim
69 words
In a method of manufacturing a semiconductor device wherein a layer of silicon is selectively masked and the exposed silicon is oxidized to form a silica layer, the improvement comprising the step of selectively masking said silicon layer with a masking layer of silicon nitride having a germanium content of 0.5 to 10 atomic % of its silicon content and having a thickness of 400 A to 1 μm.
Claim 17
Dependent Claim
23 words
The improvement according to claim 13, wherein said masking layer further comprises a silicon nitride film formed on the germanium-containing silicon nitride layer.
Claim 18
Dependent Claim
29 words
The improvement according to claim 14, wherein the thickness of the germanium-containing silicon nitride layer is one to two times the thickness of the silicon nitride layer formed thereon.
References Cited (Backward Citations)
US3558348A
Cited
US3669693A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1981-11-20 | 1982-05-22 | 1982-11-21 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1985-11-20 | 1986-05-22 | 1986-11-21 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1989-11-20 | 1990-05-22 | 1990-11-21 | $7700.00 | Window Closed / Lapsed |