US4126509A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Process for producing phosophorous-doped silicon monocrystals having a select peripheral dopant concentration along a radial cross-section of such monocrystal
Assignee: Siemens AG
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Filing: 1976-10-26
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Granted: 1978-11-21
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Expires: 1996-10-26
Abstract
Abstract A process for producing phosphorous-doped silicon monocrystals having a select peripheral depletion or enrichment of dopant atoms along the radial direction of such monocrystals comprises providing a silicon monocrystalline rod homogeneously doped with phosphorous, as by neutron doping, and subjecting such homogeneously doped monocrystalline rod to a peripheral zone melt cycle in a select atmosphere such that the peripheral melt zone depth within the monocrystalline rod is controlled so as to be less than the radius of the rod in accordance with the desired peripheral dopant concentration in the ultimately attained rod.
Inventors
- 👤 Wolfgang Keller
- 👤 Herbert Kramer
- 👤 Konrad Reuschel
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-03 15:17
CPC Classifications
C; C30; C30B; C30B13/00; C30B13/06
Claims Analysis
Total Claims: 3
Claim 1
Independent Claim
167 words
A process for producing a phosphorous-doped silicon monocrystal having a radially peripheral dopant concentration lower than the dopant concentration at the center of such monocrystal, comprising: providing a silicon monocrystalline rod having a substantially homogeneous phosphorous doping throughout such rod by controllably irradiating said rod with thermal neutrons so that the reactions: Si.sup.30 (n, γ) Si.sup.31 β- p.sup.31 occurs within said rod and yields a homogeneous phosphorous doped silicon monocrystalline rod; subjecting said homogeneously phosphorous doped rod to at least one peripheral zone melt cycle in a select atmosphere in such a manner that a melt zone is generated about said rod so as to have a depth which ranges between about 1/10 to 1/3 the radius of said rod and said melt zone is drawn at least once through said rod; and adjusting the draw rate of said peripheral melt zone through said rod so as to range from about 0.5 mm/min to about 8 mm/min to attain the desired peripheral dopant concentration in said rod.
Claim 2
Dependent Claim
167 words
A process for producing a phosphorous-doped silicon monocrystal having a radially peripheral dopant concentration lower than the dopant concentration at the center of such monocrystal, comprising: providing a silicon monocrystalline rod having a substantially homogeneous phosphorous doping throughout such rod by controllably irradiating said rod with thermal neutrons so that the reactions: Si.sup.30 (n, γ) Si.sup.31 β- p.sup.31 occurs within said rod and yields a homogeneous phosphorous doped silicon monocrystalline rod; subjecting said homogeneously phosphorous doped rod to at least one peripheral zone melt cycle in a select atmosphere in such a manner that a melt zone is generated about said rod so as to have a depth which ranges between about 1/10 to 1/3 the radius of said rod and said melt zone is drawn at least once through said rod; and adjusting the draw rate of said peripheral melt zone through said rod so as to range from about 0.5 mm/min to about 8 mm/min to attain the desired peripheral dopant concentration in said rod.
Claim 3
Dependent Claim
43 words
A process as defined in claim 1 wherein a single-turn induction heating coil having an inner diameter which is less than 10 mm larger than the diameter of the rod is used to generate said melt zone during the peripheral melt zone cycle.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1981-11-20 | 1982-05-22 | 1982-11-21 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1985-11-20 | 1986-05-22 | 1986-11-21 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1989-11-20 | 1990-05-22 | 1990-11-21 | $7700.00 | Window Closed / Lapsed |