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US4124861A Expired / Lapsed US ⏱️ 0.0 years remaining

Charge transfer filter

Assignee: General Electric Co
•
Filing: 1975-10-01
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Granted: 1978-11-07
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Expires: 1995-10-01
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Abstract

Abstract A charge transfer filter includes an accumulator charge storage location and means for alternately introducing charge into the accumulator charge storage location and then for removing a preselected fraction of the total charge in the accumulator charge storage location so that the total accumulated charge is known.

Inventors

  • 👤 Richard D. Baertsch
  • 👤 William E. Engeler

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-10-26 19:22
CPC Classifications
H; H03; H03H; H03H15/00; H03H15/02; G; G11; G11C; G11C19/00; G11C19/28; G11C19/282; H10; H10D; H10D44/00; H10D44/40; H10D44/45; H10D44/452; H10D44/472

Claims Analysis

Total Claims: 3
Claim 1
Independent Claim 340 words
In combination, a substrate of semiconductor material of one conductivity type having a major surface, means forming a charge storage region adjacent said major surface of said substrate including a first and a second electrode, each insulatingly overlying said storage region, means for enlarging in steps the charge storage capability of said storage region by selectively coupling in steps each of a plurality of additional storage regions to the portion of said storage region underlying said first electrode, said additional storage regions forming a series with each member of the series coupling to a preceding member thereof except the first member which couples with the portion of said storage region underlying said first electrode, a plurality of additional electrodes, each insulatingly overlying a respective one of said additional storage regions, each of said additional electrodes spaced in a plane parallel to said major surface forming a series of gaps, each gap of the series except the first being located between adjacent additional electrodes, said first gap being located between said first electrode and the additional electrode overlying the first member of said additional storage regions, the area of each additional electrode of said series being greater than the area of a preceding additional electrode of said series, sampling means for developing a sequence of first quantities of charge, each quantity corresponding to a respective value of a series of successive values of an analog signal, introducing means including said second electrode for introducing serially each of said quantities of charge of said sequence into said storage region, removing means including said second electrode for removing periodically a fixed fraction less than 1 of the total of said first quantities of charge contained in said storage region to provide a sequence of second quantities of charge, said fixed fraction of charge periodically removed from said storage region by said removal means being determined by the ratio of the area of said second electrode overlying said substrate to the total area of said first, second electrodes and additional electrodes overlying said substrate.
Claim 2
Dependent Claim 340 words
In combination, a substrate of semiconductor material of one conductivity type having a major surface, means forming a charge storage region adjacent said major surface of said substrate including a first and a second electrode, each insulatingly overlying said storage region, means for enlarging in steps the charge storage capability of said storage region by selectively coupling in steps each of a plurality of additional storage regions to the portion of said storage region underlying said first electrode, said additional storage regions forming a series with each member of the series coupling to a preceding member thereof except the first member which couples with the portion of said storage region underlying said first electrode, a plurality of additional electrodes, each insulatingly overlying a respective one of said additional storage regions, each of said additional electrodes spaced in a plane parallel to said major surface forming a series of gaps, each gap of the series except the first being located between adjacent additional electrodes, said first gap being located between said first electrode and the additional electrode overlying the first member of said additional storage regions, the area of each additional electrode of said series being greater than the area of a preceding additional electrode of said series, sampling means for developing a sequence of first quantities of charge, each quantity corresponding to a respective value of a series of successive values of an analog signal, introducing means including said second electrode for introducing serially each of said quantities of charge of said sequence into said storage region, removing means including said second electrode for removing periodically a fixed fraction less than 1 of the total of said first quantities of charge contained in said storage region to provide a sequence of second quantities of charge, said fixed fraction of charge periodically removed from said storage region by said removal means being determined by the ratio of the area of said second electrode overlying said substrate to the total area of said first, second electrodes and additional electrodes overlying said substrate.
Claim 3
Dependent Claim 24 words
The combination of claim 1 in which the areas of said additional electrodes form a geometric series with said area of said first electrode.

References Cited (Backward Citations)

US3906542A Cited
US3898685A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1981-11-06 1982-05-08 1982-11-07 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1985-11-06 1986-05-08 1986-11-07 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 1989-11-06 1990-05-08 1990-11-07 $7700.00 Window Closed / Lapsed

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