US4123302A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method for depositing epitaxial semiconductor from the liquid phase
Assignee: RCA Corp
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Filing: 1978-02-21
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Granted: 1978-10-31
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Expires: 1998-02-21
Abstract
Abstract A furnace boat has a plurality of wells therein. A first slide movably extends through the boat along and across the bottom of the wells. The first slide carries a substrate on which layers of semiconductor material are to be deposited. A second slide movable extends through the boat and across the wells adjacent the open tops of the wells. The second slide supports the starter deposition materials. A wafer extends partially across each well adjacent each slide, and an inclined guide plate extends partially across each well from adjacent the second slide to an edge of the wafer. Molten deposition material is deposited from the second slide onto the inclined guide plate and rolls into an end of the space between the wafer and the substrate carried on the first slide. The deposition material is then sucked into the space between the wafer and substrate by capillary action. Upon cooling the furnace boat, the semiconductor material will deposit from the deposition material onto the substrate. The first slide can be moved to carry the substrate into each well where a separare epitaxial layer can be deposited on the substrate.
Inventors
- 👤 Donald P. Marinelli
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 17:32
CPC Classifications
C; C30; C30B; C30B19/00; C30B19/06; C30B19/063
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
91 words
A method of depositing an epitaxial layer of a semiconductor material on a substrate comprising the steps of: (a) bringing the substrate into closely spaced relation to a wafer, (b) dropping a molten solution of the semiconductor material in a solvent into an edge of the space between the wafer and the substrate so that that solution is sucked up into the space by capillary action and fills the space, and then (c) cooling said solution so as to precipitate the semiconductor material and deposit the semiconductor material on the substrate.
Claim 2
Independent Claim
91 words
A method of depositing an epitaxial layer of a semiconductor material on a substrate comprising the steps of: (a) bringing the substrate into closely spaced relation to a wafer, (b) dropping a molten solution of the semiconductor material in a solvent into an edge of the space between the wafer and the substrate so that that solution is sucked up into the space by capillary action and fills the space, and then (c) cooling said solution so as to precipitate the semiconductor material and deposit the semiconductor material on the substrate.
Claim 3
Dependent Claim
16 words
A method in accordance with claim 1 in which the wafer is of the semiconductor material.
Claim 4
Dependent Claim
94 words
A method in accordance with claim 1 in which a plurality of epitaxial layers are deposited on the substrate in succession by bringing the substrate into closely spaced relation with a plurality of separate wafers in succession, while the substrate is in closely spaced relation to each wafer, dropping a separate solution of the semiconductor material in a solvent into one end of the space between the wafer and the substrate so that the solution is sucked into and fills the space, and cooling each solution to deposit the semiconductor material on the substrate.
Claim 5
Independent Claim
159 words
A method of depositing on a substrate a plurality of epitaxial layers of a semiconductor material in succession using a furnace boat having a plurality of spaced wells in a surface thereof, a substrate carrier slide extending through the boat and across the bottom of the wells, and means partially across each well closely spaced from the substrate carrier slide and forming a narrow space between the means and the slide comprising the steps of: (a) moving said slide to bring the substrate into each of the wells in succession; (b) while the substrate is in each of the wells dropping a solution of the semiconductor material in a solvent into an end of said narrow space so that the solution is sucked into and fills said narrow space by capillary action; and (c) while each solution is in its respective narrow space, cooling said solution to precipitate the semiconductor material and deposit the semiconductor material on the substrate.
Claim 6
Independent Claim
159 words
A method of depositing on a substrate a plurality of epitaxial layers of a semiconductor material in succession using a furnace boat having a plurality of spaced wells in a surface thereof, a substrate carrier slide extending through the boat and across the bottom of the wells, and means partially across each well closely spaced from the substrate carrier slide and forming a narrow space between the means and the slide comprising the steps of: (a) moving said slide to bring the substrate into each of the wells in succession; (b) while the substrate is in each of the wells dropping a solution of the semiconductor material in a solvent into an end of said narrow space so that the solution is sucked into and fills said narrow space by capillary action; and (c) while each solution is in its respective narrow space, cooling said solution to precipitate the semiconductor material and deposit the semiconductor material on the substrate.
Claim 7
Dependent Claim
25 words
A method in accordance with claim 4 in which the means extending partially across each of the wells is a wafer of the semiconductor material.
Claim 8
Dependent Claim
53 words
A method in accordance with claim 5 in which solutions are formed by supporting in each of the wells above the source wafer a separate charge of the semiconductor material and a solvent and heating the furnace boat and its contents to a temperature at which the semiconductor material dissolves in the solvent.
Claim 9
Dependent Claim
40 words
A method in accordance with claim 6 further including the steps of supporting the charges on a second slide which extends across the wells, and dropping the solutions into the respective wells by moving the slide out of the wells.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1981-10-30 | 1982-05-01 | 1982-10-31 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1985-10-30 | 1986-05-01 | 1986-10-31 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1989-10-30 | 1990-05-01 | 1990-10-31 | $7700.00 | Window Closed / Lapsed |