Magnetic single-wall domain bias field control arrangement

Claim 2

A control arrangement for use in association with single-wall magnetic domain apparatus having thin-film layer means in which single-wall domains are maintained by a bias field and propagated by an in-plane rotating field, said arrangement comprising a thin-film magnetic bias field control layer in which single-wall magnetic domains can be generated and propagated, said bias field control layer having substantially the same properties as said layer means of said apparatus, a first pattern of magnetic propagating elements coupled to said bias field control layer defining a first channel including a first detector section, a second pattern of magnetic propagating elements coupled to said bias field control layer defining a second channel including a second detector section, each of said elements of said first and second channel being dimensioned for optimum propagation of domains of a first and a second predetermined diameter, respectively, first electrical circuit means for each of said channels for connecting elements of said first and second detector section in first groups including every nth element, second electrical circuit means for each of said channels for connecting elements of said first and second detector section in second groups including each of the elements between said elements of said first groups, and means energizable to generate magnetic domains in each of said channels of a diameter as determined by the magnitude of said bias field, said domains being propagatable long said channels by said in-plane rotating field, said first and second electrical circuit means of each of said channels being energizable by the presence of domains at the elements of said first and second groups of elements to present voltage signals corresponding to the number of domains at each of said groups of elements.

Claim 3

A control arrangement as claimed in claim 1 also comprising first and second comparison circuit means for said channels, respectively, for generating first and second output signals indicative of the relative magnitudes of said voltage signals in said first and second electrical circuit means of each of said detector sections.

Claim 4

A control arrangement as claimed in claim 2 also comprising a third comparison circuit means energizable responsive to said first and second output signals for generating a control signal indicative of the diameter of said generated domains.

Claim 5

A control arrangement as claimed in claim 3 also comprising means for adjusting the magnitude of said bias field energizable responsive to said control signal.

Claim 6

A magnetic single-wall domain arrangement comprising a thin-film magnetic layer of a material in which single-wall domains can be generated and propagated, said material having a predetermined domain diameter stability range, a first and second pattern of overlay elements coupled to said layer, each pattern defining first and second propagating channels including a first and a second detector section, respectively, the elements of said first channel being dimensioned for optimum propagation of domains of a large diameter with respect to said predetermined stability range and the elements of said second channel being dimensioned for optimum propagation of domains of a small diameter with respect to sid predetermined stability range, first electrical circuit means for each of said channels for connecting elements of said first and second detector section in first groups including every nth element, and second electrical circuit means for each of said channels for connecting elements of said first and second detector sections in second groups including each of the elements between said elements of said first groups.

Claim 7

A magnetic single-wall domain arrangement comprising a thin-film magnetic layer of a material in which single-wall domains can be generated and propagated, said material having a predetermined domain diameter stability range, a first and second pattern of overlay elements coupled to said layer, each pattern defining first and second propagating channels including a first and a second detector section, respectively, the elements of said first channel being dimensioned for optimum propagation of domains of a large diameter with respect to said predetermined stability range and the elements of said second channel being dimensioned for optimum propagation of domains of a small diameter with respect to sid predetermined stability range, first electrical circuit means for each of said channels for connecting elements of said first and second detector section in first groups including every nth element, and second electrical circuit means for each of said channels for connecting elements of said first and second detector sections in second groups including each of the elements between said elements of said first groups.

Claim 8

A magnetic single-wall domain arrangement comprising a thin-film magnetic layer of a material in which single-wall domains can be generated and propagated, said material having a predetermined domain diameter stability range, a pattern of overlay elements coupled to said layer defining a propagating channel including a detector section, the elements of said channel being dimensioned for optimum propagation of domains of a predetermined diameter with respect to said stability range, first electrical circuit means for said channel for connecting elements of said detector section in a first group including every nth element, and second electrical circuit means for said channel for connecting elements of said detector section in second groups including each of the elements between said elements of said first group.

Claim 9

A magnetic single-wall domain arrangement comprising a thin-film magnetic layer of a material in which single-wall domains can be generated and propagated, said material having a predetermined domain diameter stability range, a pattern of overlay elements coupled to said layer defining a propagating channel including a detector section, the elements of said channel being dimensioned for optimum propagation of domains of a predetermined diameter with respect to said stability range, first electrical circuit means for said channel for connecting elements of said detector section in a first group including every nth element, and second electrical circuit means for said channel for connecting elements of said detector section in second groups including each of the elements between said elements of said first group.

Claim 10

In combination with single-wall magnetic domain apparatus including at least a first thin-film layer in which domains can be maintained and propagated, a bias field for maintaining said domains, and an in-plane rotating field for propagating said domains, a bias field control arrangement comprising a second thin-film magnetic layer of a material having substantially the same magnetic properties as the material of said first layer, said second layer being positioned within said bias field and said rotating field, a first pattern of magnetic propagating elements coupled to said second layer defining a first channel including a first detector section, a second pattern of magnetic propagating elements coupled to said second layer defining a second channel including a second detector section, each of said elements of said first and second channels being dimensioned for optimum propagation of domains of a first and a second predetermined diameter, respectively, means energizable to generate domains in each of said channels of a diameter as determined by the magnitude of said bias field at each nth revolution of said rotating field, the domains being propagatable along said channels by said rotating field, first electrical circuit means for each of said channels for connecting propagating elements of said first and second detector section in said first groups including every nth element, and second electrical circuit means for each of said channels for connecting propagating elements of said first and second detector section in second groups including each of the elements between said elements of said first groups, said first and second electrical circuit means of each of said channels being energizable by the presence of domains at the propagating elements of said first and second groups of elements to present voltage signals of a magnitude corresponding to the number of domains at each of said groups of elements.

Claim 11

In combination with single-wall magnetic domain apparatus including at least a first thin-film layer in which domains can be maintained and propagated, a bias field for maintaining said domains, and an in-plane rotating field for propagating said domains, a bias field control arrangement comprising a second thin-film magnetic layer of a material having substantially the same magnetic properties as the material of said first layer, said second layer being positioned within said bias field and said rotating field, a first pattern of magnetic propagating elements coupled to said second layer defining a first channel including a first detector section, a second pattern of magnetic propagating elements coupled to said second layer defining a second channel including a second detector section, each of said elements of said first and second channels being dimensioned for optimum propagation of domains of a first and a second predetermined diameter, respectively, means energizable to generate domains in each of said channels of a diameter as determined by the magnitude of said bias field at each nth revolution of said rotating field, the domains being propagatable along said channels by said rotating field, first electrical circuit means for each of said channels for connecting propagating elements of said first and second detector section in said first groups including every nth element, and second electrical circuit means for each of said channels for connecting propagating elements of said first and second detector section in second groups including each of the elements between said elements of said first groups, said first and second electrical circuit means of each of said channels being energizable by the presence of domains at the propagating elements of said first and second groups of elements to present voltage signals of a magnitude corresponding to the number of domains at each of said groups of elements.

Claim 12

The combination as claimed in claim 7 also comprising first and second comparison circuit means for said first and second channel, respectively, for generating first and second output signals indicative of the relative magnitudes of said voltage signals in said first and second electrical circuit means on each of said detector sections.

Claim 13

The combination as claimed in claim 8 also comprising third comparison circuit means energizable responsive to the application of said first and second output signals for generating a control signal indicative of the diameter of said generated domains.

Claim 14

The combination as claimed in claim 9 also comprising means for interrogating said first and second comparison circuit means and for applying said first and second output signals to said third comparison circuit means at every nth revolution of said rotating field.

Claim 15

The combination as claimed in claim 10 also comprising means for adjusting the magnitude of said bias field energizable responsive to said control signal.

Claim 16

The combination as claimed in claim 7 in which the propagating elements of said first and second detector section of each of said channels comprise substantially chevron-shaped elements.

Claim 17

A bias field control arrangement adapted to adjust the bias field of single-wall magnetic domain apparatus having at least a first thin-film layer of a material in which domains can be generated and propagated, a bias field for controlling said domains at a normal predetermined diameter, and an inplane rotating field for propagating said domains in said first layer, said control arrangement comprising a second thin-film layer of a material having magnetic properties substantially identical to the magnetic properties of the material of said first layer, said second layer being positioned within said bias field and said rotating field, a first pattern of magnetic propagating elements coupled to said second layer defining a first channel including a first detector section, a second pattern of magnetic propagating elements coupled to said second layer defining a second channel including a second detector section, each of the propagating elements of said first channel being dimensioned for optimum propagation of domains of a diameter larger than said predetermined diameter, each of the propagating elements of said second channel being dimensioned for optimum propagation of domains of a diameter smaller than said predetermined diameter, and each of said propagating elements of both said channels being dimensioned for equal propagation of domains of said predetermined diameter, means energizable to generate domains in each of said channels of a diameter as controlled by the magnitude of said bias field at each nth revolution of said rotating field, the domains being propagatable along said channels by said last-mentioned field, first electrical circuit means for each of said channels for electrically connecting every nth propagating element of said first and second detector section, second electrical circuit means for each of said channels for electrically connecting each of the propagating elements between said nth elements of said first and second detector section, said first and second electrical circuit means of each of said channels being energizable by the presence of domains at its respective electrically connected propagating elements to present voltage signals of a magnitude and polarity corresponding to the number of domains at said respective electrically connected elements.

Claim 18

A bias field control arrangement adapted to adjust the bias field of single-wall magnetic domain apparatus having at least a first thin-film layer of a material in which domains can be generated and propagated, a bias field for controlling said domains at a normal predetermined diameter, and an inplane rotating field for propagating said domains in said first layer, said control arrangement comprising a second thin-film layer of a material having magnetic properties substantially identical to the magnetic properties of the material of said first layer, said second layer being positioned within said bias field and said rotating field, a first pattern of magnetic propagating elements coupled to said second layer defining a first channel including a first detector section, a second pattern of magnetic propagating elements coupled to said second layer defining a second channel including a second detector section, each of the propagating elements of said first channel being dimensioned for optimum propagation of domains of a diameter larger than said predetermined diameter, each of the propagating elements of said second channel being dimensioned for optimum propagation of domains of a diameter smaller than said predetermined diameter, and each of said propagating elements of both said channels being dimensioned for equal propagation of domains of said predetermined diameter, means energizable to generate domains in each of said channels of a diameter as controlled by the magnitude of said bias field at each nth revolution of said rotating field, the domains being propagatable along said channels by said last-mentioned field, first electrical circuit means for each of said channels for electrically connecting every nth propagating element of said first and second detector section, second electrical circuit means for each of said channels for electrically connecting each of the propagating elements between said nth elements of said first and second detector section, said first and second electrical circuit means of each of said channels being energizable by the presence of domains at its respective electrically connected propagating elements to present voltage signals of a magnitude and polarity corresponding to the number of domains at said respective electrically connected elements.

Claim 19

A bias field control arrangement as claimed in claim 13 also comprising output comparison circuit means energizable responsive to said voltage signals for generating a bias field control signal of a magnitude and polarity as determined by said voltage signals and means for periodically energizing said output comparison circuit means every nth revolution of said in-plane rotating field.

Claim 20

A bias field control arrangement as claimed in claim 14 also comprising inductive means energized responsive to said control signal for generating a magnetic field for augmenting and opposing said bias field as determined by the magnitude and polarity of said control signal.

Claim 21

A bias field control circuit for single-wall magnetic domain apparatus having an in-plane rotating field comprising a magnetic medium in which single-wall domains can be generated and propagated subject to the same propagation conditions as the conditions affecting domain propagation in the magnetic media of said apparatus, a first pattern of propagating elements coupled to said medium defining a first propagating channel, a second pattern of propagating elements coupled to said medium defining a second propagating channel, each of the elements of said first channel being dimensioned for optimum propagation of domains of a first predetermined diameter, each of the elements of said second channel being dimensioned for optimum propagation of domains of a second predetermined diameter, means for generating domains in each of said channels at each nth revolution of said rotating field, bias field means for generating a bias field for controlling the diameter of said domains in both said control circuit magnetic medium and in the magnetic media of said magnetic domain apparatus, said rotating field propagating domains along each of said first and second channels and in said magnetic media of said magnetic domain apparatus, output circuit means having voltage signals caused therein responsive to the propagation of domains of said first predetermined diameter along said second channel and the propagation of domains of said second predetermined diameter along said first channel for generating domain diameter signals, and means responsive to said last-mentioned signals for controlling said bias field means for adjusting the magnitude of said bias field.

Claim 22

A bias field control circuit for single-wall magnetic domain apparatus having an in-plane rotating field comprising a magnetic medium in which single-wall domains can be generated and propagated subject to the same propagation conditions as the conditions affecting domain propagation in the magnetic media of said apparatus, a first pattern of propagating elements coupled to said medium defining a first propagating channel, a second pattern of propagating elements coupled to said medium defining a second propagating channel, each of the elements of said first channel being dimensioned for optimum propagation of domains of a first predetermined diameter, each of the elements of said second channel being dimensioned for optimum propagation of domains of a second predetermined diameter, means for generating domains in each of said channels at each nth revolution of said rotating field, bias field means for generating a bias field for controlling the diameter of said domains in both said control circuit magnetic medium and in the magnetic media of said magnetic domain apparatus, said rotating field propagating domains along each of said first and second channels and in said magnetic media of said magnetic domain apparatus, output circuit means having voltage signals caused therein responsive to the propagation of domains of said first predetermined diameter along said second channel and the propagation of domains of said second predetermined diameter along said first channel for generating domain diameter signals, and means responsive to said last-mentioned signals for controlling said bias field means for adjusting the magnitude of said bias field.

Claim 23

A bias field control circuit as claimed in claim 16, said output circuit means including a first circuit for each of said channels for electrically connecting every nth propagating element of an output section of said channels and a second circuit for electrically connecting each propagating element between said nth propagating elements of said output sections of said channels and means for periodically energizing said output circuit means each nth revolution of said rotating field.

Claim 24

In combination with single-wall magnetic domain apparatus including at least a first thin-film layer in which domains can be maintained and propagated, a bias field source for generating a bias field for maintaining said domains, and an in-plane rotating field for propagating said domains, a bias field control arrangement comprising a second thin-film magnetic layer of a material having substantially the same domain propagating properties as the material of said first layer, said second layer being positioned within said bias field and said rotating field, a first pattern of magnetic propagating elements coupled to said second layer defining a first channel including a first detector section, a second pattern of magnetic propagating elements coupled to said second layer defining a second channel including a second detector section, each of said elements of said first and second channels being dimensioned for optimum propagation of domains of a first and a second predetermined diameter, respectively, means energizable to generate domains in each of said channels of a diameter as determined by the magnitude of said bias field at each revolution of said rotating field, the domains being propagated along said elements by said rotating field, first circuit means for each of said channels for connecting propagating elements of said first and second detector section in first groups including every nth element, second circuit means for each of said channels for connecting propagating elements of said first and second detector section in second groups including each of the elements between said elements of said first groups, said first and second circuit means of each of said channels being energizable by the presence of domains at the propagating elements of said first and second groups of elements to present voltage signals of a magnitude corresponding to the number of domains at each of said groups of elements, first and second comparison circuit means for said first and second channel, respectively, for generating first and second output signals indicative of the relative magnitudes of said voltage signals in said first and second circuit means of each of said detector sections, third comparison circuit means energizable responsive to the application of said first and second output signals for generating a control signal indicative of the diameter of said generated domains, means for interrogating said first and second comparison circuit means and for applying said first and second output signals to said third comparison circuit means at every nth revolution of said rotating field, and control means for adjusting the magnitude of said bias field energizable responsive to said control signal.

Claim 25

In combination with single-wall magnetic domain apparatus including at least a first thin-film layer in which domains can be maintained and propagated, a bias field source for generating a bias field for maintaining said domains, and an in-plane rotating field for propagating said domains, a bias field control arrangement comprising a second thin-film magnetic layer of a material having substantially the same domain propagating properties as the material of said first layer, said second layer being positioned within said bias field and said rotating field, a first pattern of magnetic propagating elements coupled to said second layer defining a first channel including a first detector section, a second pattern of magnetic propagating elements coupled to said second layer defining a second channel including a second detector section, each of said elements of said first and second channels being dimensioned for optimum propagation of domains of a first and a second predetermined diameter, respectively, means energizable to generate domains in each of said channels of a diameter as determined by the magnitude of said bias field at each revolution of said rotating field, the domains being propagated along said elements by said rotating field, first circuit means for each of said channels for connecting propagating elements of said first and second detector section in first groups including every nth element, second circuit means for each of said channels for connecting propagating elements of said first and second detector section in second groups including each of the elements between said elements of said first groups, said first and second circuit means of each of said channels being energizable by the presence of domains at the propagating elements of said first and second groups of elements to present voltage signals of a magnitude corresponding to the number of domains at each of said groups of elements, first and second comparison circuit means for said first and second channel, respectively, for generating first and second output signals indicative of the relative magnitudes of said voltage signals in said first and second circuit means of each of said detector sections, third comparison circuit means energizable responsive to the application of said first and second output signals for generating a control signal indicative of the diameter of said generated domains, means for interrogating said first and second comparison circuit means and for applying said first and second output signals to said third comparison circuit means at every nth revolution of said rotating field, and control means for adjusting the magnitude of said bias field energizable responsive to said control signal.

Claim 26

The combination as claimed in claim 18 in which said bias field source comprises a permanent magnet means and said control means comprises a winding coupled to said permanent magnet means.

Claim 27

A control arrangment for single-wall domain apparatus comprising a thin-film magnetic layer in which single-wall magnetic domains can be generated and propagated, a first and a second pattern of magnetic propagating elements coupled to said layer and defining, respectively, first and second channels, each of said elements of said first and second channel being dimensioned for optimum propagation of domains of a first and a second predetermined diameter, respectively, means including single-wall domain generating means for simultaneously initiating domains in said first and said second channels, and means including individual detector sections for said first and said second channels for determining the relative speeds of propagation of the initiated domains in said first and second channels.

Claim 28

A control arrangment for single-wall domain apparatus comprising a thin-film magnetic layer in which single-wall magnetic domains can be generated and propagated, a first and a second pattern of magnetic propagating elements coupled to said layer and defining, respectively, first and second channels, each of said elements of said first and second channel being dimensioned for optimum propagation of domains of a first and a second predetermined diameter, respectively, means including single-wall domain generating means for simultaneously initiating domains in said first and said second channels, and means including individual detector sections for said first and said second channels for determining the relative speeds of propagation of the initiated domains in said first and second channels.

Claim 29

A control arrangement in accordance with claim 20 wherein the single-wall domain apparatus further comprises bias field means and further comprising means responsive to said determining means for modifying the magnetic field of said bias field means.