US4113531A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Process for fabricating polycrystalline inp-cds solar cells
Assignee: Raytheon Co
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Filing: 1976-10-26
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Granted: 1978-09-12
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Expires: 1996-10-26
Abstract
Abstract The specification describes a compound semiconductor solar cell and fabrication process therefor wherein both the P and N-type layers of the cell are polycrystalline semiconducting material and have large crystallites with grain boundaries of similar dimensions and spacings. These grain boundaries are spaced apart by a distance substantially greater than the optical absorption length, Λ, in one of the layers and by an amount sufficient to permit substantial numbers of photon-generated carriers in that one layer to cross the PN junction between the layers. Thus, substantial power is generated without the requirement for using expensive monocrystalline semiconductive materials.
Inventors
- 👤 Kenneth W. Zanio
- 👤 Lewis M. Fraas
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 22:38
CPC Classifications
H; H10; H10F; H10F10/00; H10F10/10; H10F10/16; H10F77/00; H10F77/10; H10F77/16; H10F77/162; H10F77/164; Y; Y02; Y02E; Y02E10/00; Y02E10/50; Y10; Y10S; Y10S148/00; Y10S148/059; Y10S148/064; Y10S148/072
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
231 words
A process for fabricating a polycrystalline indium phosphide-cadmium sulphide (InP/CdS) solar cell having large crystallites and a very thin layer of indium phosphide which comprises the steps of: (a) depositing a layer of polycrystalline cadmium sulphide on a chosen substrate, (b) heating said cadmium sulphide layer at a predetermined elevated temperature and time sufficient to induce a change in the crystal structure of said cadmium sulphide layer and substantially increase the size and lateral dimension of crystallites in said cadmium sulphide layer from approximately one micrometer to a lateral dimension of the order of 20 micrometers, and thereafter (c) depositing a layer of polycrystalline indium phosphide on said polycrystalline cadmium sulphide layer and having an optical absorption length Λ and a thickness in the range of between 1 and 4 times Λ and further having relatively large crystallites with replicated grain sizes and boundaries of approximately the same lateral spacing as those in said cadmium sulphide layer, whereby the lateral grain boundary spacing in both said cadmium sulphide and indium phosphide layers is between 5 and 20 times Λ, and substantial numbers of photon generated carriers in said indium phosphide layer will cross a PN junction between said indium phosphide and cadmium sulphide layers without or before reaching said grain boundaries therein, and enabling the relatively low cost polycrystalline semiconductor fabrication of InP/CdS solar cells utilizing relatively small amounts of indium.
Claim 2
Dependent Claim
231 words
A process for fabricating a polycrystalline indium phosphide-cadmium sulphide (InP/CdS) solar cell having large crystallites and a very thin layer of indium phosphide which comprises the steps of: (a) depositing a layer of polycrystalline cadmium sulphide on a chosen substrate, (b) heating said cadmium sulphide layer at a predetermined elevated temperature and time sufficient to induce a change in the crystal structure of said cadmium sulphide layer and substantially increase the size and lateral dimension of crystallites in said cadmium sulphide layer from approximately one micrometer to a lateral dimension of the order of 20 micrometers, and thereafter (c) depositing a layer of polycrystalline indium phosphide on said polycrystalline cadmium sulphide layer and having an optical absorption length Λ and a thickness in the range of between 1 and 4 times Λ and further having relatively large crystallites with replicated grain sizes and boundaries of approximately the same lateral spacing as those in said cadmium sulphide layer, whereby the lateral grain boundary spacing in both said cadmium sulphide and indium phosphide layers is between 5 and 20 times Λ, and substantial numbers of photon generated carriers in said indium phosphide layer will cross a PN junction between said indium phosphide and cadmium sulphide layers without or before reaching said grain boundaries therein, and enabling the relatively low cost polycrystalline semiconductor fabrication of InP/CdS solar cells utilizing relatively small amounts of indium.
Claim 3
Dependent Claim
97 words
The process defined in claim 1 wherein the deposition of said cadmium sulphide layer on a chosen substrate includes initially providing an amorphous transparent glass substrate, depositing a thin layer of indium tin oxide on said glass substrate for providing a good adhesive bond thereto, thereafter sequentially depositing said cadmium sulphide and indium phosphide layers on said indium tin oxide layer, and then depositing an upper ohmic contact strip on the upper surface of said indium phosphide layer, whereby said indium tin oxide layer and said upper ohmic contact strip provide series electrical connections to said cell.
Claim 4
Dependent Claim
151 words
A process for fabricating a polycrystalline indium phosphide-cadmium sulphide solar cell with large grains which comprises: (a) evaporatively depositing a cadmium sulphide layer on a chosen substrate and at a predetermined elevated temperature and time sufficient to achieve a desired layer thickness and thereafter annealing said cadmium sulphide layer to increase the grain size therein from a lateral dimension of approximately one micrometer to a lateral dimension of the order of 20 micrometers, and (b) depositing a thin layer of polycrystalline indium phosphide on said polycrystalline cadmium sulphide layer and having an optical absorption length Λ and a thickness between 1 and 4 times Λ, whereby said indium phosphide layer is replicated with large grains having lateral boundaries of approximately the same dimension and spacing as the grain boundaries of said cadmium sulphide layer and between 5 and 20 times Λ, while minimizing the quantity of indium phosphide in said cell.
Claim 5
Dependent Claim
151 words
A process for fabricating a polycrystalline indium phosphide-cadmium sulphide solar cell with large grains which comprises: (a) evaporatively depositing a cadmium sulphide layer on a chosen substrate and at a predetermined elevated temperature and time sufficient to achieve a desired layer thickness and thereafter annealing said cadmium sulphide layer to increase the grain size therein from a lateral dimension of approximately one micrometer to a lateral dimension of the order of 20 micrometers, and (b) depositing a thin layer of polycrystalline indium phosphide on said polycrystalline cadmium sulphide layer and having an optical absorption length Λ and a thickness between 1 and 4 times Λ, whereby said indium phosphide layer is replicated with large grains having lateral boundaries of approximately the same dimension and spacing as the grain boundaries of said cadmium sulphide layer and between 5 and 20 times Λ, while minimizing the quantity of indium phosphide in said cell.
Claim 6
Dependent Claim
92 words
The process defined in claim 3 wherein the deposition of said cadmium sulphide layer on a chosen substrate includes initially providing an amorphous transparent glass substrate, depositing a thin layer of indium tin oxide thereon for providing a good adhesive bond for said glass substrate, sequentially depositing said cadmium sulphide and indium phosphide layers on said indium tin oxide layer, and depositing an upper ohmic contact layer on said indium phosphide layer whereby said upper ohmic contact layer and said indium tin oxide layer provide series electrical connections to said solar cell.
References Cited (Backward Citations)
US3699401A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1981-09-11 | 1982-03-13 | 1982-09-12 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1985-09-11 | 1986-03-13 | 1986-09-12 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1989-09-11 | 1990-03-13 | 1990-09-12 | $7700.00 | Window Closed / Lapsed |