US4113516A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of forming a curved implanted region in a semiconductor body
Assignee: RCA Corp
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Filing: 1977-01-28
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Granted: 1978-09-12
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Expires: 1997-01-28
Abstract
Abstract A method is disclosed whereby a region having a varying conductivity profile and depth is formed in a body of semiconductor material. The method includes the step of implanting conductivity modifiers beneath a curved surface of the body. Such a region, fabricated by the present method, is particularly useful as one element of a semi-conductor device.
Inventors
- 👤 Samuel Ponczak
- 👤 John Aaron Olmstead
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-06 02:43
CPC Classifications
H; H10; H10D; H10D62/00; H10D62/10; H10D62/102; H10D62/103; H10D62/104; H10D62/124; H10D62/125; H10P; H10P30/00; H10P30/20; H10P30/22
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
61 words
A method of forming a region having a varying sheet resistivity in a body of semiconductor material which comprises the steps of: providing a body of semiconductor material having at least one concave curved surfae along a side edge thereof; and ion implanting conductivity modifying ions beneath said curved surface whereby a layer having a varying sheet resistivity is formed thereunder.
Claim 2
Independent Claim
61 words
A method of forming a region having a varying sheet resistivity in a body of semiconductor material which comprises the steps of: providing a body of semiconductor material having at least one concave curved surfae along a side edge thereof; and ion implanting conductivity modifying ions beneath said curved surface whereby a layer having a varying sheet resistivity is formed thereunder.
Claim 3
Dependent Claim
33 words
A method as claimed in claim 1 further comprising the step of: heating said body of semiconductor material to a temperature at which said conductivity modifiers within said layer diffuse into said body.
Claim 4
Dependent Claim
15 words
A method as claimed in claim 1 wherein: said conductivity modifying ions are boron ions.
Claim 5
Dependent Claim
40 words
A method as claimed in claim 1 wherein: said exposing step is performed by exposing said curved surface to conductivity modifying ions having an energy of about 150KeV and a flux of about 3 × 10 15 ions/cm 2 .
Claim 6
Dependent Claim
21 words
A method as claimed in claim 2 wherein: heating said body at a temperature of about 1200°C. for about 24 hours.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1981-09-11 | 1982-03-13 | 1982-09-12 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1985-09-11 | 1986-03-13 | 1986-09-12 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1989-09-11 | 1990-03-13 | 1990-09-12 | $7700.00 | Window Closed / Lapsed |