US4110653A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of modifying the temperature drift of the propagation time of surface elastic waves and a device obtained by said method
Assignee: Thales SA
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Filing: 1977-03-25
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Granted: 1978-08-29
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Expires: 1997-03-25
Abstract
Abstract The present invention relates to the modification of the temperature-induced drift in propagation time of surface elastic waves. The invention proposes to achieve this modification by selecting a suitable crystal cut of the crystalline substrate, and carrying out a localized ion bombardment of the surface at which the elastic waves propagate.
Inventors
- 👤 Pierre Hartemann
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-27 19:07
CPC Classifications
H; H03; H03L; H03L1/00; H03L1/02; H03L1/028; H03H; H03H3/00; H03H3/007; H03H3/08; H03H3/10; H03H9/00; H03H9/02; H03H9/02535; H03H9/02543; H03H9/02551; H03H9/30; H03H9/42
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
107 words
A method of reducing the differences in propagation time of surface elastic waves ascribed to variations in temperature of a crystalline substrate propagating said surface elastic waves, said method comprising the steps of cutting the crystalline substrate in accordance with a predetermined crystal cut, and in subjecting at least one superficial zone of the substrate, located in the trajectory of said waves, to an ion bombardment; said ion bombardment permanently altering the regular lattice arrangement of the atoms of said crystalline substrate; the intensity and the extent of said ion bombardment being adjusted for substantially reducing within given temperature and frequency ranges, said differences in propagation time.
Claim 2
Independent Claim
107 words
A method of reducing the differences in propagation time of surface elastic waves ascribed to variations in temperature of a crystalline substrate propagating said surface elastic waves, said method comprising the steps of cutting the crystalline substrate in accordance with a predetermined crystal cut, and in subjecting at least one superficial zone of the substrate, located in the trajectory of said waves, to an ion bombardment; said ion bombardment permanently altering the regular lattice arrangement of the atoms of said crystalline substrate; the intensity and the extent of said ion bombardment being adjusted for substantially reducing within given temperature and frequency ranges, said differences in propagation time.
Claim 3
Dependent Claim
36 words
A method as claimed in claim 1, wherein said temperature range comprises an operating temperature to either side of which said differences have the same sign; said ion bombardment producing a shift in said operating temperature.
Claim 4
Dependent Claim
36 words
A method as claimed in claim 1, wherein said ion bombardment produces over the extent of said zone an inversion of the sign of the thermal drift inherent to the crystalline substrate having said crystal cut.
Claim 5
Dependent Claim
28 words
A method as claimed in claim 2, wherein said crystalline substrate is quartz; said cut being an (ST, X)--cut; said shift consisting in an increase in said temperature.
Claim 6
Dependent Claim
22 words
A method as claimed in claim 2, wherein said crystalline substrate is made of quartz; said cut being an (X, Z 36°)--cut.
Claim 7
Dependent Claim
23 words
A method as claimed in claim 2, wherein said crystalline substrate is made of quartz; said cut being an (Y, X, 40°) cut.
Claim 8
Dependent Claim
67 words
An electromechanical surface wave device comprising a crystalline substrate; a superficial zone of the surface of said substrate being modified by an ion bombardment permanently altering the regular lattice arrangement of the atoms of said crystalline substrate; said zone being located on the path of said surface wave for causing a modification of the thermal drift of the propagation time of said surface wave along said surface.
Claim 9
Dependent Claim
67 words
An electromechanical surface wave device comprising a crystalline substrate; a superficial zone of the surface of said substrate being modified by an ion bombardment permanently altering the regular lattice arrangement of the atoms of said crystalline substrate; said zone being located on the path of said surface wave for causing a modification of the thermal drift of the propagation time of said surface wave along said surface.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1981-08-28 | 1982-02-27 | 1982-08-29 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1985-08-28 | 1986-02-27 | 1986-08-29 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1989-08-28 | 1990-02-27 | 1990-08-29 | $7700.00 | Window Closed / Lapsed |