US4101920A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Green light emitting diode
Assignee: Sony Corp
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Filing: 1977-09-14
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Granted: 1978-07-18
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Expires: 1997-09-14
Abstract
Abstract A green light emitting diode of gallium phosphide having an epitaxial layer consisting of P and N type layer portions. A donor concentration in the N type layer, an acceptor concentration gradient in the P type layer and nitrogen concentration near the pn junction are selected respectively at predetermined values.
Inventors
- 👤 Hiroyuki Nagasawa
- 👤 Kunio Kaneko
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-26 13:10
CPC Classifications
H; H10; H10H; H10H20/00; H10H20/80; H10H20/81; H10H20/822; H10H20/824; H10H20/8242; H10H20/01; H10H20/011; H10H20/013
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
170 words
A green light emitting diode comprising: a semiconductor substrate of gallium phosphide; and an epitaxial layer of gallium phosphide having nitrogen therein formed on said substrate; said epitaxial layer having an N type layer portion directly formed on said substrate, a P type layer portion formed on and interfaced with said N type layer portion, a PN junction being formed therebetween, said N type layer portion being doped to have a donor concentration of between 1 × 10 17 and 2 × 10 18 cm -3 , said P type layer portion being doped to have an acceptor concentration gradient adjacent said PN junction of between 7 × 10 20 cm -4 and 1.5 × 10 21 cm -4 , the concentration of nitrogen in said gallium phosphide epitaxial layer being between 1 × 10 18 cm -3 and 1 × 10 19 cm -3 within a zone having a thickness less than 3 μm from the PN junction and less than said concentration of nitrogen out of said zone.
Claim 2
Dependent Claim
170 words
A green light emitting diode comprising: a semiconductor substrate of gallium phosphide; and an epitaxial layer of gallium phosphide having nitrogen therein formed on said substrate; said epitaxial layer having an N type layer portion directly formed on said substrate, a P type layer portion formed on and interfaced with said N type layer portion, a PN junction being formed therebetween, said N type layer portion being doped to have a donor concentration of between 1 × 10 17 and 2 × 10 18 cm -3 , said P type layer portion being doped to have an acceptor concentration gradient adjacent said PN junction of between 7 × 10 20 cm -4 and 1.5 × 10 21 cm -4 , the concentration of nitrogen in said gallium phosphide epitaxial layer being between 1 × 10 18 cm -3 and 1 × 10 19 cm -3 within a zone having a thickness less than 3 μm from the PN junction and less than said concentration of nitrogen out of said zone.
Claim 3
Dependent Claim
19 words
A green light emitting diode as claimed in claim 1, in which said substrate is of an N type.
Claim 4
Dependent Claim
23 words
A green light emitting diode as claimed in claim 1, in which said N type layer portion contains one of sulphur and tellurium.
Claim 5
Dependent Claim
19 words
A green light emitting diode as claimed in claim 1, in which said P type layer portion contains zinc.
Claim 6
Dependent Claim
175 words
A green light emitting diode comprising: a semiconductor substrate of gallium phosphide; and an epitaxial layer of gallium phosphide having nitrogen therein formed on said substrate; said epitaxial layer having an N type layer portion directly formed on said substrate, a P type layer portion formed on and interfaced with said N type layer portion, a PN junction being formed therebetween, said N type layer portion being doped to have a donor concentration of between 1 × 10 17 and 2 × 10 18 cm -3 , said P type layer portion being doped to have an acceptor concentration gradient adjacent said PN junction of between 7 × 10 20 cm -4 and 1.5 × 10 21 cm -4 , the concentration of nitrogen in said gallium phosphide epitaxial layer being between 1 × 10 18 cm -3 and 1 × 10 19 cm -3 within a zone having a thickness not less than the diffusion length of minority carriers from the PN junction and less than said concentration of nitrogen out of said zone.
Claim 7
Dependent Claim
175 words
A green light emitting diode comprising: a semiconductor substrate of gallium phosphide; and an epitaxial layer of gallium phosphide having nitrogen therein formed on said substrate; said epitaxial layer having an N type layer portion directly formed on said substrate, a P type layer portion formed on and interfaced with said N type layer portion, a PN junction being formed therebetween, said N type layer portion being doped to have a donor concentration of between 1 × 10 17 and 2 × 10 18 cm -3 , said P type layer portion being doped to have an acceptor concentration gradient adjacent said PN junction of between 7 × 10 20 cm -4 and 1.5 × 10 21 cm -4 , the concentration of nitrogen in said gallium phosphide epitaxial layer being between 1 × 10 18 cm -3 and 1 × 10 19 cm -3 within a zone having a thickness not less than the diffusion length of minority carriers from the PN junction and less than said concentration of nitrogen out of said zone.
References Cited (Backward Citations)
US3911462A
Cited
US3931631A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1981-07-17 | 1982-01-16 | 1982-07-18 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1985-07-17 | 1986-01-16 | 1986-07-18 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1989-07-17 | 1990-01-16 | 1990-07-18 | $7700.00 | Window Closed / Lapsed |