US4100438A
Expired / Lapsed
US
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Compound transistor circuitry
Assignee: Nippon Gakki Co Ltd
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Filing: 1975-08-14
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Granted: 1978-07-11
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Expires: 1995-08-14
Abstract
Abstract A compound transistor circuitry having an output characteristic resembling that of a pentode vacuum tube comprises: a first field effect transistor having a saturated-type output characteristic resembling that of a pentode vacuum tube; and a second field effect transistor having an unsaturated-type output characteristic resembling that of a triode vacuum tube. The first and second field effect transistors have a conducting channel of a single and same conductivity type, respectively. The second field effect transistor is connected in series with the drain current path of the first field effect transistor. This second field effect transistor is rendered conductive only when the drain-source voltage of the first field effect transistor exceeds its pinch-off voltage.
Inventors
- 👤 Kenji Yokoyama
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-26 20:56
CPC Classifications
H; H03; H03F; H03F1/00; H03F1/08; H03F1/22; H03F1/226; H03F3/00; H03F3/04; H03F3/16; H03F3/165
Claims Analysis
Total Claims: 24
Claim 1
Independent Claim
236 words
A compound transistor circuitry comprising: a first field effect transistor having a gate electrode, a source electrode and a drain electrode and having a saturated-type output characteristic resembling that of a pentode vacuum tube; a second field effect transistor having a gate electrode, a source electrode and a drain electrode and having an unsaturating-type output characteristic resembling that of a triode vacuum tube and being connected in series to the drain current path of said first field effect transistor; a first terminal connected to the gate electrode of said first field effect transistor; a second terminal connected to the source electrode of said first field effect transistor; a third terminal connected to the drain electrode of said second field effect transistor; and a biasing voltage source connected between said gate electrode of said second field effect transistor and said second terminal for providing a biasing voltage across said gate electrode of said second field effect transistor and said second terminal, said first field effect transistor having a conducting channel of a certain conductivity type which is identical with the conductivity type of the conducting channel of said second field effect transistor, said biasing voltage having a magnitude and a polarity enabling said second field effect transistor only to become and remain conductive with its said unsaturating-type output characteristic during the state of the drain-source voltage of said first field effect transistor exceeding its pinch-off voltage level.
Claim 2
Dependent Claim
236 words
A compound transistor circuitry comprising: a first field effect transistor having a gate electrode, a source electrode and a drain electrode and having a saturated-type output characteristic resembling that of a pentode vacuum tube; a second field effect transistor having a gate electrode, a source electrode and a drain electrode and having an unsaturating-type output characteristic resembling that of a triode vacuum tube and being connected in series to the drain current path of said first field effect transistor; a first terminal connected to the gate electrode of said first field effect transistor; a second terminal connected to the source electrode of said first field effect transistor; a third terminal connected to the drain electrode of said second field effect transistor; and a biasing voltage source connected between said gate electrode of said second field effect transistor and said second terminal for providing a biasing voltage across said gate electrode of said second field effect transistor and said second terminal, said first field effect transistor having a conducting channel of a certain conductivity type which is identical with the conductivity type of the conducting channel of said second field effect transistor, said biasing voltage having a magnitude and a polarity enabling said second field effect transistor only to become and remain conductive with its said unsaturating-type output characteristic during the state of the drain-source voltage of said first field effect transistor exceeding its pinch-off voltage level.
Claim 3
Dependent Claim
32 words
A compound transistor circuitry according to claim 1, in which: the drain electrode of said first field effect transistor is directly connected to the source electrode of said second field effect transistor.
Claim 4
Dependent Claim
20 words
A compound transistor circuitry according to claim 1, in which: said biasing voltage source is a direct current voltage source.
Claim 5
Dependent Claim
21 words
A compound transistor circuitry according to claim 1, in which: said biasing voltage source is a variable direct current voltage source.
Claim 6
Dependent Claim
35 words
A compound transistor circuitry according to claim 1, in which: said first field effect transistor is a horizontal junction-type field effect transistor, and said second field effect transistor is a vertical junction-type field effect transistor.
Claim 7
Dependent Claim
40 words
A compound transistor circuitry according to claim 1, in which: said biasing voltage source comprises a voltage divider circuit network formed with a plural number of resistors and a direct current voltage source connected to said voltage divider circuit network.
Claim 8
Dependent Claim
37 words
A compound transistor circuitry according to claim 1, in which: said second field effect transistor has a cut-off voltage higher than the pinch-off voltage level of said first field effect transistor, and said biasing voltage is zero.
Claim 9
Dependent Claim
36 words
A compound transistor circuitry according to claim 1, in which: said first field effect transistor and said second field effect transistor are of an n-type conductivity channel, and the polarity of said biasing voltage is positive.
Claim 10
Dependent Claim
178 words
A compound field effect transistor having an improved pentode type operating characteristic comprising: a first junction type field effect transistor having a saturated drain current to drain voltage characteristic and a given pinch-off drain voltage level, said transistor having a first gate electrode for receiving an input signal, a first source electrode and a first drain electrode, means including a second junction type field effect transistor having an unsaturating drain current to drain voltage characteristic for steepening the output current characteristic of the compound transistor while improving its input voltage versus output current characteristic by causing said second transistor to start and remain conductive in accordance with said unsaturating characteristic only after and during the time that said first transistor exceeds its said pinch-off drain voltage level, said second transistor having a second gate electrode, a second source electrode and a second drain electrode, said first drain electrode being connected to said second source electrode, and said first source and second drain electrodes being the output electrodes for exhibiting said steepened and improved characteristic of said compound transistor.
Claim 11
Dependent Claim
178 words
A compound field effect transistor having an improved pentode type operating characteristic comprising: a first junction type field effect transistor having a saturated drain current to drain voltage characteristic and a given pinch-off drain voltage level, said transistor having a first gate electrode for receiving an input signal, a first source electrode and a first drain electrode, means including a second junction type field effect transistor having an unsaturating drain current to drain voltage characteristic for steepening the output current characteristic of the compound transistor while improving its input voltage versus output current characteristic by causing said second transistor to start and remain conductive in accordance with said unsaturating characteristic only after and during the time that said first transistor exceeds its said pinch-off drain voltage level, said second transistor having a second gate electrode, a second source electrode and a second drain electrode, said first drain electrode being connected to said second source electrode, and said first source and second drain electrodes being the output electrodes for exhibiting said steepened and improved characteristic of said compound transistor.
Claim 12
Dependent Claim
51 words
A compound transistor as in claim 9 including biasing means connected between said first source electrode and second gate electrode for forwardly biasing said second transistor to a voltage which prevents conduction of said second transistor until the drain-source voltage of said first transistor has exceeded its said pinch-off voltage level.
Claim 13
Dependent Claim
44 words
A compound transistor as in claim 9 wherein said means includes a direct connection between said first source electrode and second gate electrode and wherein the gate-source voltage of said second transistor is higher than said pinch-off drain voltage level of the first transistor.
Claim 14
Dependent Claim
16 words
A compound transistor as in claim 11 wherein said second transistor is of the vertical type.
Claim 15
Dependent Claim
221 words
A compound field effect transistor having an improved pentode type operating characteristic comprising: a first junction type field effect transistor having a saturated drain current to drain voltage characteristic and a given pinch-off drain voltage level, said first transistor having a gate electrode, a first source electrode and a first drain electrode, means including a second junction type field effect transistor having an unsaturating drain current to drain voltage characteristic for steepening the output current characteristic of the compound transistor while improving its input voltage versus output current characteristic by causing said second transistor to start and remain conductive in accordance with said unsaturating characteristic only after and during the time that said first transistor exceeds its said pinch-off drain voltage level, said second transistor having a second gate electrode, a second source electrode and a second drain electrode, a first terminal, a second terminal, and a third terminal, said first terminal being connected to said first source electrode and to second gate electrode, said second terminal being connected to said second drain electrode, said third terminal being connected to said first gate electrode for receivig an input signal, said first drain electrode being connected to said second source electrode, and said first and second terminals being the output terminals for exhibiting said steepened and improved characteristic of said compound transistor.
Claim 16
Dependent Claim
221 words
A compound field effect transistor having an improved pentode type operating characteristic comprising: a first junction type field effect transistor having a saturated drain current to drain voltage characteristic and a given pinch-off drain voltage level, said first transistor having a gate electrode, a first source electrode and a first drain electrode, means including a second junction type field effect transistor having an unsaturating drain current to drain voltage characteristic for steepening the output current characteristic of the compound transistor while improving its input voltage versus output current characteristic by causing said second transistor to start and remain conductive in accordance with said unsaturating characteristic only after and during the time that said first transistor exceeds its said pinch-off drain voltage level, said second transistor having a second gate electrode, a second source electrode and a second drain electrode, a first terminal, a second terminal, and a third terminal, said first terminal being connected to said first source electrode and to second gate electrode, said second terminal being connected to said second drain electrode, said third terminal being connected to said first gate electrode for receivig an input signal, said first drain electrode being connected to said second source electrode, and said first and second terminals being the output terminals for exhibiting said steepened and improved characteristic of said compound transistor.
Claim 17
Dependent Claim
51 words
A compound transistor as in claim 13 including biasing means connected between said first source electrode and second gate electrode for forwardly biasing said second transistor to a voltage which prevents conduction of said second transistor until the drain-source voltage of said first transistor has exceeded its said pinch-off voltage level.
Claim 18
Dependent Claim
44 words
A compound transistor as in claim 13 wherein said means includes a direct connection between said first source electrode and second gate electrode and wherein the gate-source voltage of said second transistor is higher than said pinch-off drain voltage level of the first transistor.
Claim 19
Dependent Claim
16 words
A compound transistor as in claim 15 wherein said second transistor is of the vertical type.
Claim 20
Dependent Claim
223 words
A compound field effect transistor having a pentode type output characteristic with its initial slope decreased and the range of saturation expanded, comprising: a first junction type field effect transistor having a saturated drain current to drain voltage characteristic and having a first gate electrode, a first source electrode and a first drain electrode, means including a second junction type field effect transistor having an unsaturating drain current to drain voltage characteristic for decreasing the initial slope of the input voltage versus output current characteristic of the compound transistor and for also expanding its range of saturation by causing said second transistor to begin and remain conducting in accordance with said unsaturating characteristic before said first transistor becomes saturated, said second transistor having a second gate electrode, a second source electrode and a second drain electrode, a first terminal, a second terminal, and a third terminal, said first terminal being connected to said first source electrode and to said second gate electrode, said second terminal being connected to said second drain electrode, said third terminal being connected to said first gate electrode for receiving an input signal, said first drain electrode being connected to said second source electrode, and said first and second terminals being the output terminals for exhibiting the decreased initial slope and expanded saturation range characteristic of said compound transistor.
Claim 21
Dependent Claim
223 words
A compound field effect transistor having a pentode type output characteristic with its initial slope decreased and the range of saturation expanded, comprising: a first junction type field effect transistor having a saturated drain current to drain voltage characteristic and having a first gate electrode, a first source electrode and a first drain electrode, means including a second junction type field effect transistor having an unsaturating drain current to drain voltage characteristic for decreasing the initial slope of the input voltage versus output current characteristic of the compound transistor and for also expanding its range of saturation by causing said second transistor to begin and remain conducting in accordance with said unsaturating characteristic before said first transistor becomes saturated, said second transistor having a second gate electrode, a second source electrode and a second drain electrode, a first terminal, a second terminal, and a third terminal, said first terminal being connected to said first source electrode and to said second gate electrode, said second terminal being connected to said second drain electrode, said third terminal being connected to said first gate electrode for receiving an input signal, said first drain electrode being connected to said second source electrode, and said first and second terminals being the output terminals for exhibiting the decreased initial slope and expanded saturation range characteristic of said compound transistor.
Claim 22
Dependent Claim
27 words
A compound transistor as in claim 17 wherein said means includes bias means connected between said first source and second gate for reverse biasing said second transistor.
Claim 23
Dependent Claim
44 words
A compound transistor as in claim 17 including means for varying the internal resistance between said first and second terminals by varying a voltage across said first and third terminals to make said compound transistor a variable resistance element having a large dynamic range.
Claim 24
Dependent Claim
42 words
A compound transistor as in claim 17 wherein said means includes construction of said second transistor with a cut-off voltage lower than the pinch-off voltage of said first transistor and said first source electrode is directly connected to said second gate electrode.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1981-07-10 | 1982-01-09 | 1982-07-11 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1985-07-10 | 1986-01-09 | 1986-07-11 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1989-07-10 | 1990-01-09 | 1990-07-11 | $7700.00 | Window Closed / Lapsed |