Optical control device for integrated optical circuit

Claim 2

An improved optical control device for an integrated optical circuit, said control device incorporating a substrate and a wave guide layer associated with one face thereof, said substrate and said wave guide layer each being comprised of monocrystalline material selected from the group consisting of strontium titanate and barium titanate, and mixed compositions of strontium titanate and barium titanate, provided that, when said substrate comprises monocrystalline strontium titanate, said wave guide layer is comprised of a monocrystal selected from the group consisting of barium titanate and mixed compositions of barium titanate and strontium titanate, and, when said substrate comprises a monocrystal selected from the group consisting of barium titanate and mixed compositions of barium titanate and strontium titanate, said wave guide layer comprises monocrystalline strontium titanate.

Claim 3

The optical control device of claim 1, wherein said mixed composition consists of 97 mole % of barium titanate and 3 mole % of strontium titanate, and has the formula Ba 0 .97 Sr 0 .03 TiO 3 .

Claim 4

The optical control device of claim 1 wherein an intermediate dielectric layer comprised of silicon dioxide is applied over said wave guide layer, and further wherein an electrode pair is applied over said dielectric layer.

Claim 5

An optical control device of claim 3 employed as a polarizer.

Claim 6

An optical device of claim 3 employed as a modulator.

Claim 7

An optical device of claim 3 employed as a deflector.

Claim 8

An optical device of claim 3 employed as a switch.

Claim 9

The optical control device of claim 3 wherein said electrode pair is comprised of combed shaped members whose respective teeth are interdigitated and located in laterally spaced relationship to one another.

Claim 10

The optical control device of claim 8 wherein said wave guide layer is epitaxially grown on said substrate.

Claim 11

The optical control device of claim 8 wherein said wave guide layer is grown by diffusion on said substrate.

Claim 12

A process for making an optical control device comprising the steps of (A) locating a wave guide layer in adjoining relationship to a substrate, said substrate and said wave guide layer each being comprised of monocrystalline material selected from the group consisting of strontium titanate, barium titanate, and mixed compositions of strontium titanate and barium titanate, provided that, when said substrate comprises mono-crystalline strontium titanate, said wave guide layer is comprised of a monocrystal selected from the group consisting of barium titanate and mixed compositions of barium titanate and strontium titanate, and, when said substrate comprises a monocrystal selected from the group consisting of barium titanate and mixed compositions of barium titanate and strontium titanate, said wave guide layer comprises monocrystalline strontium titanate, (B) placing a dielectric silicon dioxide layer over said wave guide layer, and (C) placing a pair of electrodes over said dielectric layer.

Claim 13

A process for making an optical control device comprising the steps of (A) locating a wave guide layer in adjoining relationship to a substrate, said substrate and said wave guide layer each being comprised of monocrystalline material selected from the group consisting of strontium titanate, barium titanate, and mixed compositions of strontium titanate and barium titanate, provided that, when said substrate comprises mono-crystalline strontium titanate, said wave guide layer is comprised of a monocrystal selected from the group consisting of barium titanate and mixed compositions of barium titanate and strontium titanate, and, when said substrate comprises a monocrystal selected from the group consisting of barium titanate and mixed compositions of barium titanate and strontium titanate, said wave guide layer comprises monocrystalline strontium titanate, (B) placing a dielectric silicon dioxide layer over said wave guide layer, and (C) placing a pair of electrodes over said dielectric layer.

Claim 14

The process of claim 11 wherein said locating is accomplished by liquid phase epitaxy.

Claim 15

The process of claim 11 wherein said locating is accomplished by diffusion.

Claim 16

The process of claim 11 wherein after said locating is accomplished said wave guide layer is heated to a temperature above its Curie point in an electric field and then is cooled to a temperature below its Curie point.