US4099199A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Photovoltaic cell employing a PbO-SnO heterojunction
Assignee: University of Southern California
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Filing: 1977-04-29
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Granted: 1978-07-04
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Expires: 1997-04-29
Abstract
Abstract A photovoltaic cell that incorporates a PbO-SnO heterojunction of graded composition which, among other applications, can be utilized for the conversion of solar energy to electrical energy. A p-i-n junction is formed while PbO and SnO are simultaneously deposited on a substrate in a varying ratio that is either decreased or increased to form the compositions Pb 1-x Sn x O where x varies in the range of 0 to 1.
Inventors
- 👤 David Beryle Wittry
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-25 22:44
CPC Classifications
H; H10; H10F; H10F10/00; H10F10/10; H10F10/16; H10F10/13; Y; Y02; Y02E; Y02E10/00; Y02E10/50
Claims Analysis
Total Claims: 13
Claim 1
Independent Claim
62 words
In a photovoltaic cell having photoconductive material disposed between first and second conducting members, the improvement according to which said photoconductive material comprises Pb 1-x Sn x O formed with a p-i-n heterojunction or n-i-p heterojunction, x varying in the range of 0 to 1 whereby said material decreases in PbO content from said first conducting member to said second conducting member.
Claim 2
Dependent Claim
62 words
In a photovoltaic cell having photoconductive material disposed between first and second conducting members, the improvement according to which said photoconductive material comprises Pb 1-x Sn x O formed with a p-i-n heterojunction or n-i-p heterojunction, x varying in the range of 0 to 1 whereby said material decreases in PbO content from said first conducting member to said second conducting member.
Claim 3
Dependent Claim
31 words
The improvement of claim 1 in which said first conducting member is transparent to visible or infrared light, said cell being formed for exposure to light of said first conducting member.
Claim 4
Dependent Claim
28 words
The improvement of claim 1 in which the thickness of said i region is large relative to the thickness of each of said n and p type regions.
Claim 5
Dependent Claim
43 words
The improvement of claim 3 in which said n and p regions each have a thickness in the range of about 0.5 micron to 2 microns and said i region has a thickness in the range of about 5 microns to 20 microns.
Claim 6
Dependent Claim
19 words
The improvement of claim 1 in which the p junction of said material is adjacent said first conducting member.
Claim 7
Dependent Claim
19 words
The improvement of claim 1 in which the n junction of said material is adjacent said first conducting member.
Claim 8
Dependent Claim
27 words
The improvement of claim 1 wherein x in said i region varies in graded manner from a value greater than 0 to a value less than 1.
Claim 9
Dependent Claim
22 words
The improvement of claim 1 wherein x in said i region has a fixed value in the range of 0.3 to 0.4.
Claim 10
Dependent Claim
20 words
The improvement of claim 1 wherein x in said photoconductive material adjacent said second conductive member is greater than 0.3.
Claim 11
Dependent Claim
26 words
The improvement of claim 1 in which said photoconductive material adjacent said first conductive member defining one of said n and p regions is substantially PbO.
Claim 12
Dependent Claim
107 words
In a photovoltaic cell having photoconductive material disposed between first and second conducting members, the improvement according to which said photoconductive material comprises Pb 1-x Sn x O formed with a p-i-n heterojunction or n-i-p heterojunction and decreases in PbO content from said first conducting member to said second conducting member, wherein x is substantially 0 in said photoconductive material adjacent said first conducting member, defining one of said n and p regions, varies in graded manner from a value greater than 0 to a value less than unity in said i region, and is greater than 0.3 in said photoconductive material adjacent said second conducting member.
Claim 13
Dependent Claim
107 words
In a photovoltaic cell having photoconductive material disposed between first and second conducting members, the improvement according to which said photoconductive material comprises Pb 1-x Sn x O formed with a p-i-n heterojunction or n-i-p heterojunction and decreases in PbO content from said first conducting member to said second conducting member, wherein x is substantially 0 in said photoconductive material adjacent said first conducting member, defining one of said n and p regions, varies in graded manner from a value greater than 0 to a value less than unity in said i region, and is greater than 0.3 in said photoconductive material adjacent said second conducting member.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1981-07-03 | 1982-01-02 | 1982-07-04 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1985-07-03 | 1986-01-02 | 1986-07-04 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1989-07-03 | 1990-01-02 | 1990-07-04 | $7700.00 | Window Closed / Lapsed |