US4098617A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of manufacturing film thermopile
Assignee: Individual
•
Filing: 1975-09-23
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Granted: 1978-07-04
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Expires: 1995-09-23
Abstract
Abstract A method of manufacturing a film thermopile, whereby a film of a thermoelectric semiconductor material which is an n-type stoichiometric solid solution containing Bi 2 Te 3 and Sb 2 Te 3 is deposited on a substrate. Then heating is effected so that adjacent arms of the film are at different temperatures, some at a temperature of not above 300° C, and others at a temperature of not less than 350° C.
Inventors
- 👤 Nikolai Stepanovich Lidorenko
- 👤 Nikolai Vasilievich Kolomoets
- 👤 Zinovy Moiseevich Dashevsky
- 👤 Vladimir Isaakovich Granovsky
- 👤 Elena Alexandrovna Zhemchuzhina
- 👤 Lev Nikolaevich Chernousov
- 👤 Igor Aronovich Shmidt
- 👤 Ljudmila Alexeevna Nikolashina
- 👤 David Mendeleevich Gelfgat
- 👤 Igor Vladimirovich Sgibnev
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 18:33
CPC Classifications
H; H10; H10N; H10N10/00; H10N10/01; H10N10/80; H10N10/81; H10N10/817; H10N10/85; H10N10/851; H10N10/852
Claims Analysis
Total Claims: 4
Claim 1
Independent Claim
105 words
A method of manufacturing a film thermopile having N-type and P-type arms, comprising the steps of: depositing a film of a thermoelectric semiconductor material which is an N-type solid solution containing Bi 2 Te 3 and Sb 2 Te 3 on a substrate; and processing said substrate in an inert medium by heating portions of the film, corresponding to the desired N-type arms, to a temperature of not above 300° C., thereby forming said n-type arms, and simultaneously heating other areas of the film, which correspond to the desired P-type arms, to a temperature of not less than 350° C. thereby forming said p-type arms.
Claim 2
Independent Claim
105 words
A method of manufacturing a film thermopile having N-type and P-type arms, comprising the steps of: depositing a film of a thermoelectric semiconductor material which is an N-type solid solution containing Bi 2 Te 3 and Sb 2 Te 3 on a substrate; and processing said substrate in an inert medium by heating portions of the film, corresponding to the desired N-type arms, to a temperature of not above 300° C., thereby forming said n-type arms, and simultaneously heating other areas of the film, which correspond to the desired P-type arms, to a temperature of not less than 350° C. thereby forming said p-type arms.
Claim 3
Dependent Claim
28 words
The method of claim 1, wherein said solid solution contains 50 mol. percent of Bi 2 Te 3 and 50 mol. percent of Sb 2 Te 3 .
Claim 4
Dependent Claim
91 words
The method of claim 1, wherein said processing step includes the steps of: depositing strips of antimony oxide over a portion of said film of thermoelectric semiconductor material; heating said thermoelectric semiconductor material such that material not having antimony oxide deposited thereover is heated to a temperature of not above 300° C., forming N-type arms; and C. exposing said material to an illumination source such that said portion of said semiconductor material having antimony oxide deposited thereupon is heated to a temperature of not less than 350° C forming P-type arms.
References Cited (Backward Citations)
US3020326A
Cited
US3441449A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1981-07-03 | 1982-01-02 | 1982-07-04 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1985-07-03 | 1986-01-02 | 1986-07-04 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1989-07-03 | 1990-01-02 | 1990-07-04 | $7700.00 | Window Closed / Lapsed |