Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
109 words
A method of manufacturing improved thick-film resistors on plane substrates, including the steps of: applying the resistance material of the thick-film resistor (1) onto a substrate in a layer so as to cause said layer to have the configuration of a finite surface bounded by at least one straight border and tapering with increasing distance from this straight border; providing two current leads (2,3) in contact with respective edges of said layer along the tapering borders of said surface, and partly removing the resistance material in a direction substantially perpendicular to said straight border from the portion of said layer located at the greatest distance from said straight border.
Claim 2
Independent Claim
109 words
A method of manufacturing improved thick-film resistors on plane substrates, including the steps of: applying the resistance material of the thick-film resistor (1) onto a substrate in a layer so as to cause said layer to have the configuration of a finite surface bounded by at least one straight border and tapering with increasing distance from this straight border; providing two current leads (2,3) in contact with respective edges of said layer along the tapering borders of said surface, and partly removing the resistance material in a direction substantially perpendicular to said straight border from the portion of said layer located at the greatest distance from said straight border.
Claim 3
Dependent Claim
75 words
A method according to claim 1, in which the thick-film resistor (1) is applied onto a substrate as a layer having the shape of a trapezoid, in which, further, the two current leads (2,3) are provided along the respective non-parallel sides of the trapezoid, and in which the partial removal of the resistance material is performed by an incision (4) in said layer starting from the shorter of the two parallel sides of the trapezoid.
Claim 4
Dependent Claim
71 words
A method according to claim 1, in which the thick-film resistor (1) is applied onto the substrate as a layer in the shape of a semicircle, in which, further, the two current leads (2,3) are provided along the semicircular border of the layer, and in which the partial removal of the resistance material is performed by an incision (4) in said layer starting from the middle of the semicircular circumferential line.
Claim 5
Dependent Claim
32 words
A method according to claim 1, in which the step of removing resistance material from the thick-film resistor layer (1) is performed by cutting out a narrow strip of the layer (4).
Claim 6
Dependent Claim
31 words
A method according to claim 4, in which the removal of resistance material from the thick-film resistor layer (1) is performed by means of a light beam of high power density.
Claim 7
Dependent Claim
18 words
A method according to claim 5, in which said light beam is produced by means of a laser.
Claim 8
Dependent Claim
30 words
A method according to claim 4, in which the removal of resistance material from the thick-film resistor layer (1) is performed by means of an electron beam in a vacuum.