US4094733A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of neutralizing local defects in charge couple device structures
Assignee: Westinghouse Electric Corp
•
Filing: 1976-11-16
•
Granted: 1978-06-13
•
Expires: 1996-11-16
Abstract
Abstract A process and structure are disclosed whereby dopants are used to surround crystalline defects in a semiconductor crystal thereby creating a PN junction which isolates the defect site from the remaining semiconductor substrate and preventing charge flow through the defect into the potential well of a charge coupled device structure.
Inventors
- 👤 Robert C. Gallagher
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 02:15
CPC Classifications
H; H10; H10D; H10D44/00; H10D44/40; H10D44/45; H10D44/472; H10D62/00; H10D62/10; H10D62/102; H10P; H10P36/00; H10P36/03; H10P95/00; H10P95/40; H10P95/402; Y; Y10; Y10S; Y10S257/00; Y10S257/928
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
121 words
A method of preventing charge leakages in potential wells of a charge coupled device which are caused by defects located in a semiconductor substrate in which the potential wells are formed and which defects may intersect the potential wells, the method comprising: diffusing a dopant of a second conductivity into a semiconductor substrate having a continuous surface to provide a first diffused region of approximately uniform depth and second deeper diffused regions surrounding any defect in said substrate; and removing only said first diffused region from said substrate, said substrate having said second diffused regions surrounding any defects in order to neutralize the effect of any of said defects in the substrate in which the potential wells are to be formed.
Claim 2
Independent Claim
121 words
A method of preventing charge leakages in potential wells of a charge coupled device which are caused by defects located in a semiconductor substrate in which the potential wells are formed and which defects may intersect the potential wells, the method comprising: diffusing a dopant of a second conductivity into a semiconductor substrate having a continuous surface to provide a first diffused region of approximately uniform depth and second deeper diffused regions surrounding any defect in said substrate; and removing only said first diffused region from said substrate, said substrate having said second diffused regions surrounding any defects in order to neutralize the effect of any of said defects in the substrate in which the potential wells are to be formed.
Claim 3
Dependent Claim
26 words
A method in accordance with claim 1 wherein said doped material of second conductivity is of opposite conductivity type than said semiconductor substrate of first conductivity.
Claim 4
Dependent Claim
28 words
A method in accordance with claim 1 further including ion implanting dopants of a second conductivity type in said substrate prior to diffusing said dopants into said substrate.
Claim 5
Dependent Claim
21 words
A method in accordance with claim 1 wherein said step of removing said first diffused region is achieved by chemical etching.
Claim 6
Dependent Claim
21 words
A method in accordance with claim 1 wherein said step of removing said first diffused region is achieved by anodic oxidation.
Claim 7
Dependent Claim
12 words
A method in accordance with claim 1 wherein said dopant is boron.
References Cited (Backward Citations)
US3475661A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1981-06-12 | 1981-12-12 | 1982-06-13 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1985-06-12 | 1985-12-12 | 1986-06-13 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1989-06-12 | 1989-12-12 | 1990-06-13 | $7700.00 | Window Closed / Lapsed |