Sculptured pressure diaphragm

Claim 2

In a pressure transducer, a diaphragm composed of a nonmetallic material, said diaphragm having at least two elongated slots separating thick rigid portions therein and forming at least two respective thin flexures joining said thick rigid portions whereby deflection of said diaphragm causes said flexures to bend about axes parallel to their lengths, and strain sensitive means comprising piezoresistive semiconductive means secured to said diaphragm opposite one of said slots to detect relative movement of parts of the corresponding thin flexure in response to bending thereof to change resistance of said semiconductive means by an amount corresponding to a pressure change.

Claim 3

In a pressure transducer as defined in claim 1 wherein said nonmetallic material consists of silicon crystal.

Claim 4

In a pressure transducer as defined in claim 2 wherein the slots are formed by etching.

Claim 5

In a pressure transducer, a diaphragm composed of a nonmetallic material, said diaphragm havng at least two elongated slots separating thick rigid portions therein and forming at least two respective thin flexures joining said thick rigid portions whereby deflection of said diaphragm causes said flexures to bend about axes parallel to their lengths, and piezoresistive semiconductive means differentially responsive to bending of said flexures to change resistance by an amount corresponding to a pressure change, said piezoresistive means being sensors that are composed of the same base material as the diaphragm and each of which has two ends that are bonded to thick portions of the diaphragm on opposite sides of one of said slots.

Claim 6

In a pressure transducer, a diaphragm composed of a nonmetallic material, said diaphragm havng at least two elongated slots separating thick rigid portions therein and forming at least two respective thin flexures joining said thick rigid portions whereby deflection of said diaphragm causes said flexures to bend about axes parallel to their lengths, and piezoresistive semiconductive means differentially responsive to bending of said flexures to change resistance by an amount corresponding to a pressure change, said piezoresistive means being sensors that are composed of the same base material as the diaphragm and each of which has two ends that are bonded to thick portions of the diaphragm on opposite sides of one of said slots.

Claim 7

In a pressure transducer, a diaphragm composed of a nonmetallic material, said diaphragm having a thin sheet portion supporting at least two raised portions forming thick rigid islands spaced inwardly from a raised rim portion and providing two thin flexure sections between adjacent raised portions, the spaces opposite said flexure sections between adjacent raised portions being in the form of straight elongated slots whereby deflection of said diaphragm causes said flexures to bend about axes parallel to their lengths, and strain sensitive means comprising piezoresistive semiconductive means secured to said diaphragm opposite one of said slots to detect relative movement of parts of the corresponding thin flexure in response to bending thereof to change resistance of said semiconductive means by an amount corresponding to a pressure change.

Claim 8

In a pressure transducer, a diaphragm composed of a nonmetallic material, said diaphragm having a thin sheet portion supporting at least two raised portions forming thick rigid islands spaced inwardly from a raised rim portion and providing two thin flexure sections between adjacent raised portions, the spaces opposite said flexure sections between adjacent raised portions being in the form of straight elongated slots whereby deflection of said diaphragm causes said flexures to bend about axes parallel to their lengths, and strain sensitive means comprising piezoresistive semiconductive means secured to said diaphragm opposite one of said slots to detect relative movement of parts of the corresponding thin flexure in response to bending thereof to change resistance of said semiconductive means by an amount corresponding to a pressure change.

Claim 9

In a pressure transducer as defined in claim 5 wherein said nonmetallic material is a crystal material selected from the group consisting of silicon and germanium.

Claim 10

In a pressure transducer as defined in claim 6 wherein said diaphragm is of unitary construction formed by etching a blank to form said islands and said flexures.

Claim 11

A pressure transducer as defined in claim 1, wherein said flexures have a thickness small compared with the thickness of said rigid portions.

Claim 12

In a pressure transducer as defined in claim 8, a second strain sensitive means comprising piezoresistive semiconductive means secured to said diaphragm opposite another of said slots to detect relative movement of parts of the corresponding thin flexure in response to bending thereof to change the resistance of said semiconductive means by an amount corresponding to a pressure change.

Claim 13

In a pressure transducer as defined in claim 8 wheren said nonmetallic material has a density less than about 4.

Claim 14

In a pressure transducer as defined in claim 10 wherein said nonmetallic material has substantially the same temperature coefficient of expansion as the material of the piezoresistive means.