High-speed memory cell with dual purpose data bus

Claim 2

A memory cell comprising a flip-flop having first and second data bus line means by which to read and write cell data, said memory cell including: first and second data node means for receiving and storing memory cell data, first and second multi-terminal semiconductor coupling devices, each of said coupling devices having a pair of conduction path terminals respectively connected between one of said data node means and a corresponding one of said first and second data bus line means, and first unidirectional current conducting means respectively connected across the conduction path terminals of each of said first and second coupling devices.

Claim 3

The memory cell recited in claim 1, wherein said first unidirectional current conducting means includes a diode.

Claim 4

The memory cell recited in claim 1, including terminal means to receive a signal thereat to selectively address said memory cell, and second unidirectional current conducting means respectively connected between said terminal means and each of said first and second data node means.

Claim 5

The memory cell recited in claim 3, wherein said second unidirectional current conducting means includes a diode.

Claim 6

The memory cell recited in claim 1, wherein each of said first and second multi-terminal semiconductor coupling devices is a field effect transistor fabricated from a layer of silicon deposited on a sapphire substrate.

Claim 7

In combination: source means for providing a plurality of reference potentials, bus line means, switching means to selectively connect said bus line means to said source means to receive a first of said reference potentials, memory cell means including a terminal connected to said source means to receive a second of said reference potentials to address said memory cell means, said memory cell means also having; data node means for receiving an information signal, coupling means having first and second conduction path electrodes to selectively connect said data node means to said bus line means, first unidirectional current conducting means connected between said data node means and said bus line means and across the conduction path electrodes of said coupling means, and second unidirectional current conducting means connecting said terminal to said data node means to refresh the logical condition of the information signal of said data node means.

Claim 8

In combination: source means for providing a plurality of reference potentials, bus line means, switching means to selectively connect said bus line means to said source means to receive a first of said reference potentials, memory cell means including a terminal connected to said source means to receive a second of said reference potentials to address said memory cell means, said memory cell means also having; data node means for receiving an information signal, coupling means having first and second conduction path electrodes to selectively connect said data node means to said bus line means, first unidirectional current conducting means connected between said data node means and said bus line means and across the conduction path electrodes of said coupling means, and second unidirectional current conducting means connecting said terminal to said data node means to refresh the logical condition of the information signal of said data node means.

Claim 9

The combination recited in claim 6, wherein said first and second unidirectional current conducting means each include a diode.

Claim 10

The combination recited in claim 6, wherein said coupling means to selectively connect said data node means to said bus line means includes a field effect transistor formed from a layer of silicon deposited on a sapphite substrate, said field effect transistor having a pair of oppositely poled unidirectional current conducting devices connected across the conduction path thereof, and shorting means connected across one of said oppositely poled unidirectional current conducting devices.

Claim 11

The memory cell recited in claim 1, wherein said first unidirectional current conducting means includes a pair of series connected, oppositely poled diodes connected across the respective conduction path terminals of each of said first and second semiconductor coupling devices and between said data node means and said corresponding bus line means.

Claim 12

The memory cell recited in claim 9, including shorting means connected across one of said oppositely poled diodes.

Claim 13

The memory cell recited in claim 1, including transistor means to selectively connect each of said first and second data bus line means to a reference potential source means.

Claim 14

A high-speed memory cell array comprising: a plurality of memory cell means having at least two modes of operation, each of said memory cell means including respective data node means to receive an information signal and address terminal means connected to said data node means, reference potential source means, bus line means connected to said memory cell means data node means, first transistor means enabled during a first time interval to simultaneously connect each of said bus line means to said reference potential source means during a static mode of operation whereby the logical condition of the information signal of each of said memory cell means data node means is refreshed and second transistor means enabled during a second time interval to connect the data node means of a selected one of said plurality of memory cell means to said bus line means during a dynamic mode of operation for reading or writing the logical condition of the information signal of said selected memory cell means, control circuitry connected to control electrodes of each of said first and second transistor means to regulate the conductivity thereof, said control circuitry also connected to provide power to the respective address terminal means of each of said plurality of memory cell means during the static mode of operation and to the selected one of said memory cell means during the dynamic mode of operation, wherein said control circuitry also includes timing means to simultaneously regulate the conductivity of said first and second transistor means during said first and second time intervals, the control electrodes of said first and second transistor means receiving respective control signals that are inverted with respect to one another.

Claim 15

A high-speed memory cell array comprising: a plurality of memory cell means having at least two modes of operation, each of said memory cell means including respective data node means to receive an information signal and address terminal means connected to said data node means, reference potential source means, bus line means connected to said memory cell means data node means, first transistor means enabled during a first time interval to simultaneously connect each of said bus line means to said reference potential source means during a static mode of operation whereby the logical condition of the information signal of each of said memory cell means data node means is refreshed and second transistor means enabled during a second time interval to connect the data node means of a selected one of said plurality of memory cell means to said bus line means during a dynamic mode of operation for reading or writing the logical condition of the information signal of said selected memory cell means, control circuitry connected to control electrodes of each of said first and second transistor means to regulate the conductivity thereof, said control circuitry also connected to provide power to the respective address terminal means of each of said plurality of memory cell means during the static mode of operation and to the selected one of said memory cell means during the dynamic mode of operation, wherein said control circuitry also includes timing means to simultaneously regulate the conductivity of said first and second transistor means during said first and second time intervals, the control electrodes of said first and second transistor means receiving respective control signals that are inverted with respect to one another.

Claim 16

The high-speed memory array recited in claim 12, wherein said first transistor means is connected between said bus line means and said reference potential source means and said second transistor means is connected in electrical series with said bus line means.