US4090155A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Transmission line for electromagnetic wave
Assignee: National Institute of Advanced Industrial Science and Technology
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Filing: 1976-03-22
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Granted: 1978-05-16
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Expires: 1996-03-22
Abstract
Abstract A transmission line is disclosed which comprises a conductive layer, a resistive semiconductor layer disposed on the conductive layer and a blocking electrode disposed on the resistive semiconductor layer. By applying a biasing voltage between the blocking electrode and the conductive layer, a depletion layer is produced in the resistive semiconductor layer, the depletion layer formed in the semiconductor layer being used as a medium for transmission of electromagnetic wave.
Inventors
- 👤 Hiroshi Tateno
- 👤 Shoei Kataoka
- 👤 Nobuo Hashizume
- 👤 Yasuo Komamiya
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-25 04:00
CPC Classifications
H; H10; H10N; H10N80/00; H01; H01P; H01P3/00; H01P3/02; H01P3/08
Claims Analysis
Total Claims: 19
Claim 1
Independent Claim
111 words
An electromagnetic semiconductor device comprising in combination, a semiconductor body exhibiting a negative conductivity under a high electric field, a conductive layer provided on one surface of said semiconductor body, at least one blocking contact provided on the other surface of said semiconductor body, at least one means for applying a reverse biasing voltage between said conductive layer and said blocking contact to produce a depletion layer in said semiconductor body, at least one input means for introducing electromagnetic waves into said semiconductor body in parallel to said conductive layer, and at least one output means for extracting said electromagnetic waves from said semiconductor body in parallel to said conductive layer.
Claim 2
Dependent Claim
111 words
An electromagnetic semiconductor device comprising in combination, a semiconductor body exhibiting a negative conductivity under a high electric field, a conductive layer provided on one surface of said semiconductor body, at least one blocking contact provided on the other surface of said semiconductor body, at least one means for applying a reverse biasing voltage between said conductive layer and said blocking contact to produce a depletion layer in said semiconductor body, at least one input means for introducing electromagnetic waves into said semiconductor body in parallel to said conductive layer, and at least one output means for extracting said electromagnetic waves from said semiconductor body in parallel to said conductive layer.
Claim 3
Dependent Claim
42 words
An electromagnetic semiconductor device as set forth in claim 1, wherein said semiconductor body is of n-type semiconductor, the carrier density of which is on the order of 10 13 to 10 15 cm -3 in an electric field of low intensity.
Claim 4
Dependent Claim
19 words
An electromagnetic semiconductor device as set forth in claim 1, wherein said conductive layer is n + -type semiconductor.
Claim 5
Dependent Claim
16 words
An electromagnetic semiconductor device as set forth in claim 1, wherein said conductive layer is metal.
Claim 6
Dependent Claim
18 words
An electromagnetic semiconductor device as set forth in claim 1, wherein said conductive layer is an ohmic electrode.
Claim 7
Dependent Claim
18 words
An electromagnetic semiconductor device as set forth in claim 1, wherein said blocking electrode is a Schottky electrode.
Claim 8
Dependent Claim
18 words
An electromagnetic semiconductor device as set forth in claim 1, wherein said blocking electrode is a p-n junction.
Claim 9
Dependent Claim
26 words
An electromagnetic semiconductor device as set forth in claim 1, further comprising an inductance disposed between said conductive layer and said reverse biasing voltage applying means.
Claim 10
Independent Claim
88 words
A method for the transmission of electromagnetic waves, which comprises the steps of: using an electromagnetic semiconductor device comprising a semiconductor body, a conductive layer provided on one surface of said semiconductor body and at least one blocking contact provided on the other surface of said semiconductor body, applying a biasing voltage between said conductive layer and said blocking contact to produce a depletion in said semiconductor body, and introducing electromagnetic waves into said semiconductor body to transmit said electromagnetic waves through said depletion layer as the medium.
Claim 11
Independent Claim
88 words
A method for the transmission of electromagnetic waves, which comprises the steps of: using an electromagnetic semiconductor device comprising a semiconductor body, a conductive layer provided on one surface of said semiconductor body and at least one blocking contact provided on the other surface of said semiconductor body, applying a biasing voltage between said conductive layer and said blocking contact to produce a depletion in said semiconductor body, and introducing electromagnetic waves into said semiconductor body to transmit said electromagnetic waves through said depletion layer as the medium.
Claim 12
Dependent Claim
135 words
An electromagnetic semiconductor device comprising in combination, a semiconductor body exhibiting a negative conductivity under a high electric field, the configuration of at least one portion of which is made discontinuous; a conductive layer provided on one surface of said semiconductor body; at least one blocking contact provided on the other surface of said semiconductor body, the configuration of at least one portion of which is made discontinuous; at least one means for applying a reverse biasing voltage between said conductive layer and said blocking contact to produce a depletion layer in said semiconductor body; at least one input means for introducing electromagnetic waves into said semiconductor body in parallel to said conductive layer; and at least one output means for extracting said electromagnetic waves from said semiconductor body in parallel to said conductive layer.
Claim 13
Dependent Claim
135 words
An electromagnetic semiconductor device comprising in combination, a semiconductor body exhibiting a negative conductivity under a high electric field, the configuration of at least one portion of which is made discontinuous; a conductive layer provided on one surface of said semiconductor body; at least one blocking contact provided on the other surface of said semiconductor body, the configuration of at least one portion of which is made discontinuous; at least one means for applying a reverse biasing voltage between said conductive layer and said blocking contact to produce a depletion layer in said semiconductor body; at least one input means for introducing electromagnetic waves into said semiconductor body in parallel to said conductive layer; and at least one output means for extracting said electromagnetic waves from said semiconductor body in parallel to said conductive layer.
Claim 14
Dependent Claim
27 words
An electromagnetic semiconductor device as set forth in claim 10, wherein said at least one portion of said semiconductor body is thicker than the other portions thereof.
Claim 15
Dependent Claim
27 words
An electromagnetic semiconductor device as set forth in claim 10, wherein said at least one portion of said semiconductor body is thinner than the other portions thereof.
Claim 16
Dependent Claim
44 words
An electromagnetic semiconductor device as set forth in claim 10, wherein said at least one portion of said semiconductor body is wider than the other portions thereof and said at least one portion of said blocking contact is wider than the other portions thereof.
Claim 17
Dependent Claim
44 words
An electromagnetic semiconductor device as set forth in claim 10, wherein said at least one portion of said semiconductor body is narrower than the other portions thereof and said at least one portion of said blocking contact is narrower than the other portions thereof.
Claim 18
Dependent Claim
46 words
An electromagnetic semiconductor device as set forth in claim 10, wherein said at least one portion of said semiconductor body is thicker and narrower than the other portions thereof and said at least one portion of said blocking contact is narrower than the other portions thereof.
Claim 19
Dependent Claim
46 words
An electromagnetic semiconductor device as set forth in claim 10, wherein said at least one portion of said semiconductor body is thinner and wider than the other portions thereof and said at least one portion of said blocking contact is wider than the other portions thereof.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1981-05-15 | 1981-11-14 | 1982-05-16 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1985-05-15 | 1985-11-14 | 1986-05-16 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1989-05-15 | 1989-11-14 | 1990-05-16 | $7700.00 | Window Closed / Lapsed |