Formation of pattern using acrylamide-diacetoneacrylamide copolymer

Claim 2

A process for forming a pattern, which comprises the steps of: a. preparing a photoresist layer consisting essentially of an acrylamide-diacetoneacrylamide copolymer and a water-soluble aromatic bisazide compound on a surface for the pattern, said layer having the reciprocity law failure property, b. applying light to said photoresist layer by passing the light through a mask having said pattern to harden the photoresist layer at a surface area substantially equal to or smaller than that of apertures of said mask through which beams pass; said light being applied in the presence of an oxygen-containing gas, and with Schwartzschild's constant p being in the range of greater than 0 and smaller than 0.76, and c. developing the light-applied photoresist layer to form the pattern having a surface area substantially equal to or smaller than that of apertures of said mask through which beams pass.

Claim 3

The process according to claim 1, wherein said photoresist layer further includes an adhesion promotor.

Claim 4

The process according to claim 2, wherein said adhesion promotor is a water-soluble alkoxysilane.

Claim 5

The process according to claim 3, wherein said alkoxysilane is at least one selected from the group consisting of vinyl-tris(β-methoxyethoxy)silane, N-β(aminoethyl)-aminopropylmethyl-dimethoxysilane and N-β(aminoethyl)-γ-aminopropyl-trimethoxysilane.

Claim 6

The process according to claim 1, wherein said photoresist layer further includes at least one selected from the group consisting of a surface active agent and ethylene glycol.

Claim 7

The process according to claim 5, wherein said surface active agent is at least one selected from the group consisting of polyoxyethylenealkylether, polyoxyethylenealkylphenolether, sorbitan fatty acid ester, polyoxyethylene sorbitan fatty acid ester, polyoxyethylene acyl ester and fatty acid monoglyceride surface active agents.

Claim 8

The process according to claim 6, wherein said polyoxyethylenealkylether surface active agent is at least one selected from the group consisting of polyoxyethylenelaurylether, polyoxyethylenecetylether, polyoxyethylenestearylether and polyoxyethyleneoctylether.

Claim 9

The process according to claim 6, wherein said polyoxyethylenealkylphenolether surface active agent is at least one selected from the group consisting of polyoxyethyleneoctylphenolether and polyoxyethylenenonylphenolether.

Claim 10

The process according to claim 1, wherein said water-soluble aromatic bisazide compound is at least one selected from the group consisting of 4,4'-diazidobenzalacetophenone-2-sulfonic acid, 4,4'-diazidostilbene-2,2'-disulfonic acid and their sulfonates, and 4,4'-diazidostilbene-γ-carboxylic acid and its carboxylate.

Claim 11

The process according to claim 1, wherein said photoresist layer further includes a water-soluble high molecular material which is compatible with the acrylamide-diacetoneacrylamide copolymer.

Claim 12

The process according to claim 10, wherein said water-soluble high molecular material is at least one selected from the group consisting of carboxymethylcellulose, hydroxymethylcellulose, a sodium salt of poly-L-glutamic acid, gelatine polyacrylamide, polyvinyl methylether, polyvinyl alcohol, polyvinyl acetal, polyethylene oxide, an acrylamide-vinyl alcohol copolymer and a maleic acid-vinyl methylether copolymer.

Claim 13

The process according to claim 1, wherein said acrylamide-diacetoneacrylamide copolymer has a copolymerization ratio of acrylamide to diacetoneacrylamide ranging from 1.5 to 3.0 on a mol basis of monomers.

Claim 14

The process according to claim 1, wherein said photoresist layer has a ratio of the bisazide compound to the acrylamide-diacetoneacrylamide copolymer ranging from 0.02 to 0.50 on a weight basis.

Claim 15

The process according to claim 1, wherein a surface on which the pattern is to be formed is an inner surface of a color picture tube of a black matrix type and said pattern has sites and shapes of three primary color phosphors.

Claim 16

The process according to claim 1, wherein a surface on which the pattern is to be formed is an inner surface of a color picture tube of a black stripe type and said pattern has sites and shapes of three primary color phosphors.

Claim 17

A process for forming a phosphor pattern having a surface area substantially equal to or smaller than that of apertures for the passage of beam of a shadow mask on an inner surface of a face plate of a color picture tube of a black matrix type, which comprises, the steps of: a. preparing a photoresist layer consisting essentially of an acrylamide-diacetoneacrylamide copolymer and a water-soluble aromatic bisazide compound on said inner surface, said layer having the reciprocity law failure property, b. applying light to said photoresist layer by passing the light through a shadow mask having said pattern to harden said photoresist layer at a surface area substantially equal to or smaller than that of apertures for the passage of beam of the shadow mask; said light being applied in the presence of an oxygen-containing gas and with Schwartzschild's constant p being in the range of greater than 0 and smaller than 0.76, c. developing the light-applied photoresist layer to form the pattern having a surface area substantially equal to or smaller than that of apertures for the passage of beam of the shadow mask, d. coating said inner surface with a non-transparent, light-absorbing substance, e. pouring a chemically digestive agent on the coated inner surface to remove the hardened photoresist layer forming said pattern together with the non-transparent, light-absorbing substance adhered onto said layer, thereby matrix holes being formed, and f. filling said matrix holes with desired phosphors, respectively.

Claim 18

A process for forming a phosphor pattern having a surface area substantially equal to or smaller than that of apertures for the passage of beam of a shadow mask on an inner surface of a face plate of a color picture tube of a black matrix type, which comprises, the steps of: a. preparing a photoresist layer consisting essentially of an acrylamide-diacetoneacrylamide copolymer and a water-soluble aromatic bisazide compound on said inner surface, said layer having the reciprocity law failure property, b. applying light to said photoresist layer by passing the light through a shadow mask having said pattern to harden said photoresist layer at a surface area substantially equal to or smaller than that of apertures for the passage of beam of the shadow mask; said light being applied in the presence of an oxygen-containing gas and with Schwartzschild's constant p being in the range of greater than 0 and smaller than 0.76, c. developing the light-applied photoresist layer to form the pattern having a surface area substantially equal to or smaller than that of apertures for the passage of beam of the shadow mask, d. coating said inner surface with a non-transparent, light-absorbing substance, e. pouring a chemically digestive agent on the coated inner surface to remove the hardened photoresist layer forming said pattern together with the non-transparent, light-absorbing substance adhered onto said layer, thereby matrix holes being formed, and f. filling said matrix holes with desired phosphors, respectively.

Claim 19

The process according to claim 16, wherein said photoresist layer further includes an adhesion promotor.

Claim 20

The process according to claim 16, wherein said photoresist layer further includes at least one selected from the group consisting of a surface active agent and etylene glycol.

Claim 21

The process according to claim 16, wherein said water-soluble aromatic bisazide compound is at least one selected from the group consisting of 4,4'-diazidobenzalacetophenone-2-sulfonic acid, 4,4'-diazidostilbene-2,2'-disulfonic acid and their sulfonates, and 4,4'-diazidostilbene-γ-carboxylic acid and its carboxylate.

Claim 22

The process according to claim 16, wherein said photoresist layer further includes a water-soluble high molecular material which is compatible with the acrylamide-diacetoneacrylamide copolymer.

Claim 23

The process according to claim 20, wherein said water-soluble high molecular material is at least one selected from the group consisting of carboxymethylcellulose, hydroxymethylcellulose, a sodium salt of poly-L-glutamic acid, gelatine, polyacrylamide, polyvinyl methylether, polyvinyl alcohol, polyvinyl acetal, polyethylene oxide, an acrylamide-vinyl alcohol copolymer and a maleic acid-vinyl methylether copolymer.

Claim 24

The process according to claim 16, wherein said non-transparent, light-absorbing substance is carbon.

Claim 25

The claim according to claim 16, wherein said acrylamide-diacetoneacrylamide copolymer has a copolymerization ratio of acrylamide to diacetoneacrylamide ranging from 1.5 to 3.0 in a mole basis of monomers.

Claim 26

The process according to claim 16, wherein said photoresist layer has a ratio of the bisazide compound to the acrylamide-diacetoneacrylamide copolymer ranging from 0.02 to 0.50 on a weight basis.

Claim 27

A process for forming a pattern which comprises the steps of: a. preparing a photoresist layer consisting of an acrylamidediacetone acrylamide copolymer, a water-soluble aromatic bisazide compound, an adhesion promotor and a member selected from the group consisting of a surface-active agent and ethylene glycol and a mixture thereof on a surface for the pattern, said layer having the reciprocity law failure property, b. applying light to said photoresist layer by passing the light through a mask having said pattern to harden the photoresist layer at a surface area substantially equal to or smaller than that of apertures of said mask through which beams pass; said light being applied in the presence of an oxygen-containing gas, and with Schwartzschild's constant p being in the range of greater than 0 and smaller than 0.76, and c. developing the light-applied photoresist layer to form the pattern having a surface area substantially equal to or smaller than that of apertures of said mask through which beams pass.

Claim 28

A process for forming a pattern which comprises the steps of: a. preparing a photoresist layer consisting of an acrylamidediacetone acrylamide copolymer, a water-soluble aromatic bisazide compound, an adhesion promotor and a member selected from the group consisting of a surface-active agent and ethylene glycol and a mixture thereof on a surface for the pattern, said layer having the reciprocity law failure property, b. applying light to said photoresist layer by passing the light through a mask having said pattern to harden the photoresist layer at a surface area substantially equal to or smaller than that of apertures of said mask through which beams pass; said light being applied in the presence of an oxygen-containing gas, and with Schwartzschild's constant p being in the range of greater than 0 and smaller than 0.76, and c. developing the light-applied photoresist layer to form the pattern having a surface area substantially equal to or smaller than that of apertures of said mask through which beams pass.