US4084190A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Image sensor
Assignee: Siemens AG
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Filing: 1976-09-22
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Granted: 1978-04-11
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Expires: 1996-09-22
Abstract
Abstract An image sensor includes a plurality of parallel spaced apart semiconductor strips carried on an electrically insulating substrate and covered with at least one layer of light-permeable electrically insulating material. A plurality of parallel spaced apart electrically conductive strips are carried by the layer of light-permeable insulating material transversely of the semiconductor strips. Advantageously, the semiconductor strips may consist of epitaxial semiconductor strips, for example silicon and the electrically conductive strips may consist of polysilicon. The electrically insulating layer, at least below the electrode strips, is thinner over a longitudinal half of each strip than in the remaining areas of the layer, and each strip of doped semiconductor material is doped to a greater degree below the thicker-portions of the electrically insulating layer.
Inventors
- 👤 Karl-Ulrich Stein
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-23 22:20
CPC Classifications
H; H10; H10F; H10F39/00; H10F39/10; H10F39/12; H10F39/18
Claims Analysis
Total Claims: 14
Claim 1
Independent Claim
91 words
An image sensor comprising: an electrically insulating substrate; a plurality of first strips of doped semiconductor material carried spaced apart on said substrate; at least one layer of light-permeable electrically insulating material covering said first strips; and a plurality of second strips of electrically conductive material carried spaced-apart on said layer of light-permeable electrically insulating material transverse to said first strips, said insulating layer comprising less thickness, at least below said second strips, over one longitudinal half of each of said first strips, than over the remaining areas of said sensor.
Claim 2
Dependent Claim
91 words
An image sensor comprising: an electrically insulating substrate; a plurality of first strips of doped semiconductor material carried spaced apart on said substrate; at least one layer of light-permeable electrically insulating material covering said first strips; and a plurality of second strips of electrically conductive material carried spaced-apart on said layer of light-permeable electrically insulating material transverse to said first strips, said insulating layer comprising less thickness, at least below said second strips, over one longitudinal half of each of said first strips, than over the remaining areas of said sensor.
Claim 3
Dependent Claim
31 words
The image sensor of claim 1, wherein: each of said first strips is doped to a greater degree below the thicker portions of said insulating layer than below other portions thereof.
Claim 4
Dependent Claim
17 words
The image sensor of claim 2, wherein: each of said first strips is an epitaxial semiconductor layer.
Claim 5
Dependent Claim
14 words
The image sensor of claim 2, wherein: each of said first strips comprises silicon.
Claim 6
Dependent Claim
11 words
The image sensor of claim 2, wherein: said substrate comprises sapphire.
Claim 7
Dependent Claim
11 words
The image sensor of claim 2, wherein: said substrate comprises spinel.
Claim 8
Dependent Claim
12 words
The image sensor of claim 2, wherein: said second strips comprise polysilicon.
Claim 9
Dependent Claim
23 words
The image sensor of claim 1, comprising: at least one amplifier, each of said first strips connected to an input of said amplifier.
Claim 10
Dependent Claim
41 words
The image sensor of claim 1, comprising: a plurality of amplifiers, each of said amplifiers including an input connected to a respective first strip; and a shift register including a set of parallel inputs connected to the outputs of respective amplifiers.
Claim 11
Dependent Claim
15 words
The image sensor of claim 9, wherein: said shift register comprises a charge-coupled transmission device.
Claim 12
Dependent Claim
65 words
The image sensor of claim 1, comprising: an amplifier including an input; a plurality of switching transistors each including a control electrode, and a signal path connected between a respective first strip and said input of said amplifier; and a selection circuit including a plurality of outputs each connected to a respective control electrode and operable to selectively connect a first line to said amplifier.
Claim 13
Dependent Claim
14 words
The image sensor of claim 11, wherein: said switching transistors are MIS switching transistors.
Claim 14
Dependent Claim
112 words
The image sensor of claim 1, comprising: a plurality of differential amplifiers, one for each first strip, each including first and second inputs and an output; a pair of switching transistors, each transistor having a control electrode, and a signal path connected to the same first strip and to respective ones of said first and second inputs, said control electrodes adapted for sequential enablement of said transistors; a pair of capacitors for each amplifier connecting respective inputs to a reference potential; and a reset transistor for each first strip, including a control electrode for receiving a reset pulse, and a controlled path connected between the respective first strip and a reset potential.
References Cited (Backward Citations)
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1981-04-10 | 1981-10-10 | 1982-04-11 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1985-04-10 | 1985-10-10 | 1986-04-11 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1989-04-10 | 1989-10-10 | 1990-04-11 | $7700.00 | Window Closed / Lapsed |