US4084043A
Expired / Lapsed
US
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Photogalvanic cell having a charge storage layer with varying performance characteristics
Assignee: Grumman Corp
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Filing: 1976-07-16
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Granted: 1978-04-11
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Expires: 1996-07-16
Abstract
Abstract A charge storing photogalvanic cell including spaced electrode and counterelectrode "sandwiching" a charge storage layer and a compensating layer. Various dopants to the charge storage layer have been determined to vary cell performance as follows: increasing photosensitivity and charge retention; increasing electrical response; increasing device life; decreasing charge retention; changing optical absorption of charge storage layer; or localizing destruction of charge storage capability.
Inventors
- 👤 Horst Witzke
- 👤 Satyendra Kumar Deb
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-02 11:26
CPC Classifications
H; H01; H01G; H01G9/00; H01G9/20; H01M; H01M14/00; H01M14/005
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
82 words
A photogalvanic cell having charge storage capability and comprising: first and second electrodes positioned in spaced registry from each other; a charge storage layer covering a preselected one of said electrodes, said one electrode being light transmissive; a compensating layer covering the other of said electrodes, the compensating layer and charge storage layer forming an interface therebetween; and a preselected dopant included in the charge storage layer for varying the normal operating characteristics of the charge storage layer and thus the cell.
Claim 2
Dependent Claim
82 words
A photogalvanic cell having charge storage capability and comprising: first and second electrodes positioned in spaced registry from each other; a charge storage layer covering a preselected one of said electrodes, said one electrode being light transmissive; a compensating layer covering the other of said electrodes, the compensating layer and charge storage layer forming an interface therebetween; and a preselected dopant included in the charge storage layer for varying the normal operating characteristics of the charge storage layer and thus the cell.
Claim 3
Dependent Claim
19 words
The subject matter set forth in claim 1 wherein the dopant is a preselected metal oxide or metal fluoride.
Claim 4
Dependent Claim
29 words
The subject matter set forth in claim 1 wherein the dopant is MoO 3 which produces an increase in the photosensitivity and charge retention of the charge storage layer.
Claim 5
Dependent Claim
23 words
The subject matter set forth in claim 1 wherein the dopant is Ta 2 O 5 which produces an increase in electrical response.
Claim 6
Dependent Claim
21 words
The subject matter set forth in claim 3 wherein the dopant is CaF 2 which produces an increase in device life.
Claim 7
Dependent Claim
24 words
The subject matter set forth in claim 1 wherein the dopant is SiO 2 or TiO 2 which produces a decrease in charge retention.
Claim 8
Dependent Claim
28 words
The subject matter set forth in claim 1 wherein the dopant is Au 2 O 3 or Cr 2 O 3 which produces a change in optical absorption.
Claim 9
Dependent Claim
33 words
The subject matter set forth in claim 1 wherein the dopant is Sb 2 O 3 , Bi 2 O 3 or SiO 2 which produces a localized destruction of charge storage capability.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1981-04-10 | 1981-10-10 | 1982-04-11 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1985-04-10 | 1985-10-10 | 1986-04-11 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1989-04-10 | 1989-10-10 | 1990-04-11 | $7700.00 | Window Closed / Lapsed |