US4078945A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Anti-reflective coating for silicon solar cells
Assignee: Schott Solar CSP Inc
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Filing: 1976-05-03
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Granted: 1978-03-14
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Expires: 1996-05-03
Abstract
Abstract An anti-reflective coating is formed integrally with a silicon solar cell by treating the cell with an acidic solution comprising a mixture of HF and H 2 O 2 .
Inventors
- 👤 Ronald Gonsiorawski
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 09:36
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10F; H10F77/00; H10F77/30; H10F77/306; H10F77/311; H10F77/315; Y; Y02; Y02E; Y02E10/00; Y02E10/50
Claims Analysis
Total Claims: 20
Claim 1
Independent Claim
67 words
A silicon solar cell having an active silicon radiation-receiving surface, and an anti-reflective coating over at least a portion of said active silicon radiation-receiving surface, said coating having a thickness in the range of from 0.07 to 0.15 microns, and being formed by treating said active silicon radiation-receiving surface of said cell with an acidic solution comprising a mixture of HF and H 2 O 2 .
Claim 2
Dependent Claim
67 words
A silicon solar cell having an active silicon radiation-receiving surface, and an anti-reflective coating over at least a portion of said active silicon radiation-receiving surface, said coating having a thickness in the range of from 0.07 to 0.15 microns, and being formed by treating said active silicon radiation-receiving surface of said cell with an acidic solution comprising a mixture of HF and H 2 O 2 .
Claim 3
Dependent Claim
17 words
A solar cell according to claim 1 wherein said coating has a thickness of about 0.13 microns.
Claim 4
Dependent Claim
17 words
A solar cell according to claim 1 wherein said coating has a thickness of about 0.07 microns.
Claim 5
Dependent Claim
36 words
A silicon solar cell according to claim 1 wherein said cell comprises silicon of P-type conductivity which has been treated to provide a zone of N-type conductivity and a P-N junction adjacent the radiation-receiving surface thereof.
Claim 6
Dependent Claim
78 words
Method of forming an anti-reflective coating over at least a portion of the active silicon radiation-receiving surface of a silicon solar cell, said method comprising the step of treating said radiation-receiving surface of said cell with an acidic solution comprising a mixture of HF and H 2 O 2 long enough to form thereon a coating having a thickness in the range of about 0.07 to 0.15 microns, and then terminating such treatment and washing the resulting coating.
Claim 7
Dependent Claim
78 words
Method of forming an anti-reflective coating over at least a portion of the active silicon radiation-receiving surface of a silicon solar cell, said method comprising the step of treating said radiation-receiving surface of said cell with an acidic solution comprising a mixture of HF and H 2 O 2 long enough to form thereon a coating having a thickness in the range of about 0.07 to 0.15 microns, and then terminating such treatment and washing the resulting coating.
Claim 8
Dependent Claim
21 words
Method according to claim 5 including the step of dispersing said acidic solution in a diluent which is non-corrosive to silicon.
Claim 9
Dependent Claim
31 words
Method according to claim 6 wherein said diluent is a member selected from the group consisting of water, acetic acid, phosphoric acid and mixtures of two or more of said members.
Claim 10
Dependent Claim
25 words
Method according to claim 5 wherein said cell is treated for a time sufficient to form a coating having a thickness of about 0.13 microns.
Claim 11
Dependent Claim
25 words
Method according to claim 5 wherein said cell is treated for a time sufficient to form a coating having a thickness of about 0.07 microns.
Claim 12
Dependent Claim
33 words
Method according to claim 5 including the step of forming an electrode over selected portions of said radiation receiving surface of said cell prior to treating said cell to form said anti-reflective coating.
Claim 13
Dependent Claim
46 words
Method according to claim 5 wherein said solution comprises HF and H 2 O 2 in a ratio of from about 10 to about 2 parts by weight of HF to from about 2 to about 1 parts by weight of H 2 O 2 .
Claim 14
Dependent Claim
46 words
Method according to claim 5 wherein said silicon solar cell comprises semi-conductor silicon of P-type conductivity which has been treated to provide a zone of N-type conductivity and a P-N junction near the surface which is to form the active silicon radiation-receiving surface of the cell.
Claim 15
Independent Claim
71 words
A method of enhancing the photo-electric conversion efficiency of a silicon solar cell having an active silicon radiation-receiving surface, said method comprising treating the active silicon radiation-receiving surface of said cell with a mixture of HF and H 2 O 2 so as to substantially simultaneously (1) form an anti-reflective coating on said active silicon radiation-receiving surface and (2) reduce the depth of said junction from said active silicon radiation-receiving surface.
Claim 16
Independent Claim
71 words
A method of enhancing the photo-electric conversion efficiency of a silicon solar cell having an active silicon radiation-receiving surface, said method comprising treating the active silicon radiation-receiving surface of said cell with a mixture of HF and H 2 O 2 so as to substantially simultaneously (1) form an anti-reflective coating on said active silicon radiation-receiving surface and (2) reduce the depth of said junction from said active silicon radiation-receiving surface.
Claim 17
Dependent Claim
46 words
Method according to claim 13 wherein said silicon solar cell comprises semi-conductor silicon of P-type conductivity which has been treated to provide a zone of N-type conductivity and a P-N junction near the surface which is to form the active silicon radiation-receiving surface of the cell.
Claim 18
Independent Claim
82 words
A method of enhancing the photo-electric conversion efficiency of a silicon solar cell having an active silicon radiation-receiving surface and a junction lying below said active silicon radiation-receiving surface, said method comprising chemically treating the active silicon radiation-receiving surface of said cell with a mixture of HF and H 2 O 2 so as to substantially simultaneously (1) form an anti-reflective coating on said active silicon radiation-receiving surface and (2) reduce the depth of said junction from said active silicon radiation-receiving surface.
Claim 19
Independent Claim
82 words
A method of enhancing the photo-electric conversion efficiency of a silicon solar cell having an active silicon radiation-receiving surface and a junction lying below said active silicon radiation-receiving surface, said method comprising chemically treating the active silicon radiation-receiving surface of said cell with a mixture of HF and H 2 O 2 so as to substantially simultaneously (1) form an anti-reflective coating on said active silicon radiation-receiving surface and (2) reduce the depth of said junction from said active silicon radiation-receiving surface.
Claim 20
Dependent Claim
46 words
Method according to claim 15 wherein said silicon solar cell comprises semi-conductor silicon of P-type conductivity which has been treated to provide a zone of N-type conductivity and a P-N junction near the surface which is to form the active silicon radiation-receiving surface of the cell.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1981-03-13 | 1981-09-12 | 1982-03-14 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1985-03-13 | 1985-09-12 | 1986-03-14 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1989-03-13 | 1989-09-12 | 1990-03-14 | $7700.00 | Window Closed / Lapsed |