Current limiting circuit arrangements

Claim 2

A circuit arrangement to be connected to an electrical supply and having a supply conductor and a return conductor, respectively, to be maintained at a first and a second reference potential level, and between the conductors there being connected at least one device to be at least partially protected from damage by an excessive current flow therethrough, and also having connected to one such conductors current limiting means including a diode and a transistor, with the diode and the base-collector junction of the transistor to be in series between the conductors and the electrical supply for the conductors, and the emitter to be connected via a resistor to a point to be maintained at a third reference potential level, the transistor to be connected in a grounded-base configuration with the maximum possible collector current defined by the maximum possible emitter current, with the maximum possible emitter current in turn defined by the magnitude of the resistor and the difference between the third reference potential level and the potential level of the emitter, the diode being provided to block any possible forward collector-base current, by the diode becoming reverse-biased and the potential level of the associated conductors rising above the required reference value.

Claim 3

A circuit arrangement as claimed in claim 1 in which both the supply conductor and the return conductor are connected individually to different current limiting means, the two transistors of the two current limiting means are of opposite conductivity type, the emitter of the transistor of the further current limiting means is to be connected, via a resistor, to a point maintained at a fourth reference potential level of opposite polarity to that of the third reference potential level.

Claim 4

A circuit arrangement as claimed in claim 2 in which the bases of the two transistors of the two current limiting means are to be connected to the opposing terminals of the associated electrical supply for the circuit arrangement and to be connected to the conductors via the two current limiting means.

Claim 5

A circuit arrangement as claimed in claim 2 and arranged such that the maximum possible collector currents for each of the two current limiting means are the same.

Claim 6

A circuit arrangement as claimed in claim 1 in which the device comprises a complementary MOS device.

Claim 7

A circuit arrangement as claimed in claim 1 in which a plurality of devices are provided within the circuit arrangement each to be at least partially protected from damange by an excessive current flow therethrough by the current limiting means.

Claim 8

A circuit arrangement as claimed in claim 6 in which more than one type of device is provided within the circuit arrangement each to be at least partially protected from damage by an excessive current flow therethrough by the current limiting means.

Claim 9

A circuit arrangement as claimed in claim 6 in which common current limiting means is provided for more than one constituent device.

Claim 10

A circuit arrangement as claimed in claim 6 in which the circuit arrangement is divided into sections, with each section having at least one device to be at least partially protected from damage by an excessive current flow therethrough, and each section is provided with at least one conductor and associated current limiting means not common with at least one other section.

Claim 11

A circuit arrangement as claimed in claim 9 in which the arrangement is such that two different maximum possible currents associated with at least two different sections.

Claim 12

A semiconductor device comprising embodied in a monolithic semiconductor body a circuit arrangement to be connected to an electrical supply and having a supply conductor and a return conductor, respectively, to be maintained at a first and a second reference potential level, and between the conductors there being connected at least one device to be at least partially protected from damage by an excessive current flow therethrough, and also having connected to one such conductors current limiting means including a diode and a transistor, with the diode and the base-collector junction of the transistor to be in series between the conductors and the electrical supply for the conductors, and the emitter to be connected via a resistor to a point to be maintained at a third reference potential level, the transistor to be connected in a grounded-base configuration with the maximum possible collector current defined by the maximum possible emitter current, with the maximum possible emitter current in turn defined by the magnitude of the resistor and the difference between the third reference potential level and the potential level of the emitter, the diode being provided to block any possible forward collector-base current, by the diode becoming reverse-biased and the potential level of the associated conductors rising above the required reference value.

Claim 13

A semiconductor device comprising embodied in a monolithic semiconductor body a circuit arrangement to be connected to an electrical supply and having a supply conductor and a return conductor, respectively, to be maintained at a first and a second reference potential level, and between the conductors there being connected at least one device to be at least partially protected from damage by an excessive current flow therethrough, and also having connected to one such conductors current limiting means including a diode and a transistor, with the diode and the base-collector junction of the transistor to be in series between the conductors and the electrical supply for the conductors, and the emitter to be connected via a resistor to a point to be maintained at a third reference potential level, the transistor to be connected in a grounded-base configuration with the maximum possible collector current defined by the maximum possible emitter current, with the maximum possible emitter current in turn defined by the magnitude of the resistor and the difference between the third reference potential level and the potential level of the emitter, the diode being provided to block any possible forward collector-base current, by the diode becoming reverse-biased and the potential level of the associated conductors rising above the required reference value.