US4077112A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of manufacturing charge transfer device
Assignee: US Philips Corp
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Filing: 1976-12-10
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Granted: 1978-03-07
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Expires: 1996-12-10
Abstract
Abstract The invention relates to a charge transfer device (C.T.D.) with polycrystalline silicon electrodes which are provided on a nitride layer. The nitride layer has apertures between the polyelectrodes. Electrodes of a second metallization layer, for example, of aluminium, are provided via said apertures. The charge storage capacities per surface unit (and with equal voltages) can be made equal by subjecting the device for a short period of time to an oxidation treatment prior to providing the Al electrodes so that the oxide layer in the apertures can become thicker than below the Si electrodes.
Inventors
- 👤 Matthias Johannes Joseph Theunissen
- 👤 Roelof Pieter Kramer
- 👤 Hermanus Leonardus Peek
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-08 10:45
CPC Classifications
H; H10; H10D; H10D64/00; H10D64/01; H10D64/013; H10D64/01302; H10D64/01332; H10D64/01336; H10D64/0134; H10D44/00; H10D44/01; H10D44/041; H10D44/40; H10D44/45; H10D44/462; H10D62/00; H10D62/10; H10D62/17; H10D62/213; H10D62/335; H10D64/01344; H10D64/60; H10D64/66; H10D64/68; H10D64/681; H10D64/685; H10D64/693; H10D84/00; H10D84/01; H10D84/0198; H10D84/02; H10D84/03; H10D84/038; Y; Y10; Y10S; Y10S148/00; Y10S148/114; Y10S438/00; Y10S438/981
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
271 words
A method of manufacturing a charge transfer device comprising a semiconductor body having an electrode system provided on a surface for capacitively generating electric fields in the body by means of which electric charge can be transported through the body, said electrode system comprising a series of electrodes insulated from the surface of the body by an insulating layer and including lowermost conductors and uppermost conductors with each electrode of the uppermost conductors extending above an adjacent lowermost conductor and being separated therefrom by an intermediate insulating layer, comprising the steps of: forming on the surface of the semiconductor body said insulating layer having a double layer comprising a first sub-layer adjoining the surface of the body and a second sub-layer on the first sub-layer and constituted of a material differing from the first sub-layer and capable of masking the semiconductor body against oxidation and capable of being selectively removed relative to the first sub-layer, forming on the double layer the lowermost conductors, subjecting the lowermost conductors to an oxidation treatment to obtain the said intermediate insulating layer, the second sub-layer masking the underlying material of the semiconductor body against oxidation during said oxidation treatment, thereafter subjecting the second sub-layer to a selective removal treatment as a result of which the second sub-layer is removed locally while the first sub-layer is left substantially in place, the electrodes of the lowermost conductors with the oxide layer formed thereon serving as a selective-removal mask, and thereafter forming thereon the uppermost conductors which become separated from the surface of the semiconductor body at least mainly only by the first sub-layer of the insulating layer.
Claim 2
Independent Claim
271 words
A method of manufacturing a charge transfer device comprising a semiconductor body having an electrode system provided on a surface for capacitively generating electric fields in the body by means of which electric charge can be transported through the body, said electrode system comprising a series of electrodes insulated from the surface of the body by an insulating layer and including lowermost conductors and uppermost conductors with each electrode of the uppermost conductors extending above an adjacent lowermost conductor and being separated therefrom by an intermediate insulating layer, comprising the steps of: forming on the surface of the semiconductor body said insulating layer having a double layer comprising a first sub-layer adjoining the surface of the body and a second sub-layer on the first sub-layer and constituted of a material differing from the first sub-layer and capable of masking the semiconductor body against oxidation and capable of being selectively removed relative to the first sub-layer, forming on the double layer the lowermost conductors, subjecting the lowermost conductors to an oxidation treatment to obtain the said intermediate insulating layer, the second sub-layer masking the underlying material of the semiconductor body against oxidation during said oxidation treatment, thereafter subjecting the second sub-layer to a selective removal treatment as a result of which the second sub-layer is removed locally while the first sub-layer is left substantially in place, the electrodes of the lowermost conductors with the oxide layer formed thereon serving as a selective-removal mask, and thereafter forming thereon the uppermost conductors which become separated from the surface of the semiconductor body at least mainly only by the first sub-layer of the insulating layer.
Claim 3
Dependent Claim
59 words
A method as claimed in claim 1, wherein the selective removal treatment is an etching treatment, and as a result of the etching treatment for the local removal of the second sub-layer apertures are formed in the second sub-layer between the lowermost conductors, the uppermost conductors extending on the first sub-layer of the insulating layer and in said apertures.
Claim 4
Dependent Claim
48 words
A method as claimed in claim 2, wherein after the said etching treatment and prior to providing the uppermost conductors, the semiconductor body is subjected locally to an oxidation treatment to increase the thickness of the insulating layer at the area of said apertures in the second sub-layer.
Claim 5
Dependent Claim
57 words
A method as claimed in claim 3, wherein the oxidation treatment for the local oxidation of the semiconductor body is at most continued until the thickness of the insulating layer at the area of the apertures in said second sub-layer is equal to or less than the overall thickness of the insulating layer below the lowermost conductors.
Claim 6
Dependent Claim
111 words
A method as claimed in claim 3, wherein, after the oxidation treatment of the lowermost conductors to obtain the said intermediate insulating layer, the semiconductor body is subjected to a gettering treatment while the semiconductor body is covered, at least at its major surfaces, with an impurity-doped gettering oxide layer which is separated from the said surface by a screening layer which is of the same material as the said second sub-layer and which is provided prior to said etching treatment above the lowermost conductors and the second sub-layer and which is later removed entirely during the etching treatment in which the second sub-layer of the insulating layer is locally removed.
Claim 7
Dependent Claim
25 words
A method as claimed in claim 1, wherein the lowermost conductors are provided in the form of layers of polycrystalline silicon doped with an impurity.
Claim 8
Dependent Claim
37 words
A method as claimed in claim 1, wherein the first sub-layer is formed by a layer of silicon oxide and the second sub-layer masking the semiconductor body against oxidation is formed by a layer of silicon nitride.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1981-03-06 | 1981-09-05 | 1982-03-07 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1985-03-06 | 1985-09-05 | 1986-03-07 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1989-03-06 | 1989-09-05 | 1990-03-07 | $7700.00 | Window Closed / Lapsed |