US4075706A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Surface wave devices for processing signals
Assignee: Massachusetts Institute of Technology
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Filing: 1976-03-31
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Granted: 1978-02-21
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Expires: 1996-03-31
Abstract
Abstract A continuously programmable matched filter device using a piezoelectric substrate capable of propagating acoustic wave signals on a selected surface thereof and a semiconductor substrate mounted adjacent and spaced from such surface. Means are provided for altering the conductivity pattern in the semiconductor substrate in accordance with the wave form of a reference wave signal so that a representation of the reference wave is effectively stored therein. Storage of the reference is achieved with electrostatic charge by supplying a plurality of electrons in the spatial region between the substrates or by manipulating the carriers in the semiconductor material into trapping states in order to produce such altered conductivity pattern. A second signal can thereupon be propagated along the piezoelectric substrate to interact with the stored reference conductivity pattern to provide either correlation or convolution operation depending on the direction of propagation thereof along the piezoelectric surface.
Inventors
- 👤 Ernest Stern
- 👤 Richard C. Williamson
- 👤 Henry I. Smith
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-25 20:59
CPC Classifications
G; G11; G11C; G11C8/00; G11C8/005; G01; G01S; G01S7/00; G01S7/02; G01S7/28; G01S7/285; G01S7/292; G01S7/2923; G06; G06G; G06G7/00; G06G7/12; G06G7/19; G06G7/195
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
306 words
A device for processing and storing signals comprising a first piezoelectric substrate capable of propagating acoustic wave signals on a selected surface thereof; at least one transducer means formed on said selected surface for generating a surface acoustic wave traveling on said surface along a selected direction thereof in response to an electrical signal; a semiconductor material positioned so as to have a first surface thereof adjacent and spaced from said selected surface of said first substrate to form an interaction region which includes the region at or near said surfaces and the spatial region therebetween; a layer of conductive material disposed on a second surface of said semiconductor material, said layer forming an electrode; means for providing a first signal at said at least one transducer means to produce a first traveling acoustic wave signal along said selected surface of said first substrate; means for applying a second signal uniformly over said interaction region to provide time-varying properties thereof, the interaction of said first and second signals thereby providing an altered stationary conductivity pattern in said semiconductor material as said acoustic wave signal travels along said selected surface of said first substrate, said altered stationary conductivity pattern being stored in said semiconductor material and representing said interacting first and second signals, said means including means for supplying a substantially instantaneous burst of low energy electrons in said interaction region to establish electrostatic fields in said interaction region, the interaction of said first traveling acoustic wave signal with said low energy electrons thereby providing said altered stationary conductivity pattern; and wherein said low energy electron supplying means comprises an array of field emitting devices positioned on said first surface of said semiconductor material, and means for activating said field emitting devices to produce a plurality of electrons in said interaction region to form said electrostatic fields.
Claim 2
Independent Claim
306 words
A device for processing and storing signals comprising a first piezoelectric substrate capable of propagating acoustic wave signals on a selected surface thereof; at least one transducer means formed on said selected surface for generating a surface acoustic wave traveling on said surface along a selected direction thereof in response to an electrical signal; a semiconductor material positioned so as to have a first surface thereof adjacent and spaced from said selected surface of said first substrate to form an interaction region which includes the region at or near said surfaces and the spatial region therebetween; a layer of conductive material disposed on a second surface of said semiconductor material, said layer forming an electrode; means for providing a first signal at said at least one transducer means to produce a first traveling acoustic wave signal along said selected surface of said first substrate; means for applying a second signal uniformly over said interaction region to provide time-varying properties thereof, the interaction of said first and second signals thereby providing an altered stationary conductivity pattern in said semiconductor material as said acoustic wave signal travels along said selected surface of said first substrate, said altered stationary conductivity pattern being stored in said semiconductor material and representing said interacting first and second signals, said means including means for supplying a substantially instantaneous burst of low energy electrons in said interaction region to establish electrostatic fields in said interaction region, the interaction of said first traveling acoustic wave signal with said low energy electrons thereby providing said altered stationary conductivity pattern; and wherein said low energy electron supplying means comprises an array of field emitting devices positioned on said first surface of said semiconductor material, and means for activating said field emitting devices to produce a plurality of electrons in said interaction region to form said electrostatic fields.
Claim 3
Dependent Claim
28 words
A device in accordance with claim 1 wherein said activating means is activated in a pulsed manner to provide said burst of said electrons at a preselected time.
Claim 4
Dependent Claim
49 words
A device in accordance with claim 5, wherein said input signal is provided at the same transducer means as that of said reference signal, said input acoustic wave signal traveling in the same direction as said reference acoustic wave signal whereby said output signal is a real-time correlation signal.
Claim 5
Dependent Claim
31 words
A device in accordance with claim 1 wherein said input signal is an impulse signal whereby said output signal represents said stored reference signal as read out by said impulse signal.
Claim 6
Dependent Claim
91 words
A device in accordance with claim 1 and further including means for providing an input signal at one of said at least one transducer means to generate a traveling input acoustic wave signal along said selected surface of said first substrate when said reference wave has been so stored; said conductive layer disposed on said second surface of said semiconductor material forming a summing electrode having an output terminal; whereby the interaction of said input wave signal with said stored stationary conductivity pattern produces an output signal at said output terminal.
Claim 7
Dependent Claim
53 words
A device in accordance with claim 5 wherein said input signal is provided at a different transducer means from that of said reference signal for generating an input acoustic wave signal traveling in the opposite direction as that of said reference acoustic wave signal whereby said output signal is a real-time convolution signal.
Claim 8
Independent Claim
308 words
A device for processing and storing signals comprising a first piezoelectric substrate capable of propagating acoustic wave signals on a selected surface thereof; at least one transducer means formed on said selected surface for generating a surface acoustic wave traveling on said surface along a selected direction thereof in response to an electrical signal; a semiconductor material positioned so as to have a first surface thereof adjacent and spaced from said selected surface of said first substrate to form an interaction region which includes the region at or near said surfaces and the spatial region therebetween; a layer of conductive material disposed on a second surface of said semiconductor material, said layer forming an electrode; means for providing a first signal; means responsive to said first signal for supplying low energy electrons in said interaction region, the supply thereof depending on the characteristics of said first signal, to establish electrostatic fields in said interaction region; means for supplying a pulse signal to one of said at least one transducer means for providing an acoustic signal traveling along said selected surface of said first substrate, the time duration of said pulse signal being selected so that said acoustic signal interacts with said electrostatic fields for providing an altered stationary conductivity pattern in said semiconductor material representing the wave form of said first signal whereby said first signal is stored in said device, and wherein said low energy electron supplying means comprises an array of field emitting devices positioned on said first surface of said semiconductor material; means for activating said field emitting devices to produce a plurality of electrons in said interaction region to form said electrostatic fields; and modulation means responsive to said first signal for modulating said activating means to modulate in turn the supply of said electrons in accordance with the characteristics of said first signal.
Claim 9
Independent Claim
308 words
A device for processing and storing signals comprising a first piezoelectric substrate capable of propagating acoustic wave signals on a selected surface thereof; at least one transducer means formed on said selected surface for generating a surface acoustic wave traveling on said surface along a selected direction thereof in response to an electrical signal; a semiconductor material positioned so as to have a first surface thereof adjacent and spaced from said selected surface of said first substrate to form an interaction region which includes the region at or near said surfaces and the spatial region therebetween; a layer of conductive material disposed on a second surface of said semiconductor material, said layer forming an electrode; means for providing a first signal; means responsive to said first signal for supplying low energy electrons in said interaction region, the supply thereof depending on the characteristics of said first signal, to establish electrostatic fields in said interaction region; means for supplying a pulse signal to one of said at least one transducer means for providing an acoustic signal traveling along said selected surface of said first substrate, the time duration of said pulse signal being selected so that said acoustic signal interacts with said electrostatic fields for providing an altered stationary conductivity pattern in said semiconductor material representing the wave form of said first signal whereby said first signal is stored in said device, and wherein said low energy electron supplying means comprises an array of field emitting devices positioned on said first surface of said semiconductor material; means for activating said field emitting devices to produce a plurality of electrons in said interaction region to form said electrostatic fields; and modulation means responsive to said first signal for modulating said activating means to modulate in turn the supply of said electrons in accordance with the characteristics of said first signal.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1981-02-20 | 1981-08-22 | 1982-02-21 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1985-02-20 | 1985-08-22 | 1986-02-21 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1989-02-20 | 1989-08-22 | 1990-02-21 | $7700.00 | Window Closed / Lapsed |