Voltage regulators of a type using a common-base transistor amplifier in the collector-to-base feedback of the regulator transistor

Claim 2

A voltage regulator for regulating the voltage applied between its first and second terminals from a source of operating current, said voltage regulator comprising in addition to said first and second terminals the following: first and second transistors of a first conductivity type, each having base and emitter and collector electrodes; means connecting said first transistor as a shunt regulator for controlling the potential appearing between said first and said second terminals, which means includes first direct current conductive means that is between the emitter electrode of said first transistor and said first terminal, and includes means directly responsive to the collector current of said first transistor for reducing the potential at said second terminal; as referred to the potential at said first terminal; and a direct-coupled degenerative collector-to-base feedback connection of said first transistor wherein said second transistor is included in common-base amplifier configuration, said feedback connection including for connecting said second transistor in said common-base amplifier configuration: potential offsetting means for applying a first offset potential between said second terminal and the emitter electrode of said second transistor, second direct current conductive means that is between the emitter electrode of said second transistor and said first terminal, means for applying a bias potential between said first terminal and the base electrode of said second transistor; means direct coupling the collector electrode of said second transistor to the base electrode of said first transistor, and third direct current conductive means that is between said second terminal and the collector electrode of said second transistor.

Claim 3

A voltage regulator as set forth in claim 1 which is a shunt voltage regulator wherein said means directly responsive to the collector current of said first transistor for reducing the potential at said second terminal as referred to the potential at said first terminal comprises: a fourth direct current conductive means that is between the collector electrode of said first transistor of said second terminal.

Claim 4

A voltage regulator as set forth in claim 2 wherein said fourth direct current conductive means comprises a further transistor connected in common-base amplifier configuration for the collector current of said first transistor, said further transistor having an emitter electrode to which the collector electrode of said first transistor direct current conductively connects and having a collector electrode direct current conductively connected to said second terminal, thereby to form a cascode configuration with said first transistor.

Claim 5

A voltage regulator as set forth in claim 2 wherein said second transistor has a base-emitter junction between its base and emitter electrodes which is operated at a temperature T and exhibits a second offset potential thereacross that exhibits a negative-temperature-coefficient in T, wherein said potential offsetting means includes direct-current conductive path through at least one reverse-biased semiconductor junction operated at said temperature T and responds to said temperature T to cause said first offset potential to exhibit a positive temperature coefficient in T, wherein said means for applying a bias potential between said first terminal and the base electrode of said second transistor responds to said temperature T to apply a bias potential that exhibits a temperature coefficient related to the coefficients of said first and said second offset potentials such that the regulated potential between said first and said second terminals exhibits a substantially zero temperature coefficient.

Claim 6

A voltage regulator as set forth in claim 2 wherein said second transistor has a base-emitter junction between its base and emitter electrodes which is operated at a temperature T and exhibits a second offset potential thereacross that exhibits a negative temperature coefficient in T, wherein said means for applying a bias potential between said first terminal and the base electrode of said second transistor applies a potential that is proportional to the offset potential across a forward-biased semiconductor junction operated at said temperature T and that therefore exhibits a negative-temperature-coefficient in T, wherein said second direct current conductive means consists of a first resistance connecting the emitter electrode of said second transistor and said first terminal, and wherein said potential offsetting means includes the serial connection of at least one reverse-biased semiconductor junction operated at said temperature T and a second resistance between said second terminal and the emitter electrode of said second transistor, said second resistance being of a value respective to that of said first resistance such that the regulated potential between said first and said second terminals exhibits a substantially zero temperature coefficient.

Claim 7

A voltage regulator as set forth in claim 5 further including means connected across said second resistance for causing a current flow therethrough giving rise to a positive-temperature-coefficient component of potential drop thereacross.

Claim 8

A voltage regulator as set forth in claim 5 wherein the direct current conductive path in said potential offsetting means is through a plurality of serially connected reverse-biased semiconductor junctions with an interconnection between each adjoining pair thereof and wherein said fourth direct current conductive means comprises at least one further transistor in cascode connection with said first transistor; each said further transistor having a base electrode connected to receive bias potential from a separate one of said interconnections between each adjoining pair of serially connected reverse-biased semiconductor junctions, having an emitter electrode to which the collector electrode of said first transistor is direct current conductively connected, and having a collector electrode direct current conductively connected to said second terminal.

Claim 9

A voltage regulator as set forth in claim 2 wherein said second transistor has a base-emitter junction between its base and emitter electrodes which is operated at a temperature T and exhibits a second offset potential thereacross that exhibits a negative temperature coefficient in T, wherein said means for applying a bias potential between said first terminal and the base electrode of said second transistor applies a potential that is proportional to the offset potential across a forward-biased semiconductor junction operated at said temperature T and that therefore exhibits a negative temperature coefficient in T, wherein said second direct current conductive means consists of a first resistance connecting the emitter electrode of said second transistor and said first terminal, and wherein said potential offsetting means includes a third transistor of said first conductivity type and with base and emitter and collector electrodes, a second resistance having a first end connected to said second terminal and having a second end, fifth direct current conductive means connecting the collector electrode of said third transistor to the second end of said second resistance, a third resistance connected between said first terminal and the emitter electrode of said third transistor, a plurality of reverse-biased semiconductor junctions in serial connection between the second end of said second resistance and the emitter electrode of said second transistor with an interconnection between each adjoining pair of reverse-biased semiconductor junctions in said serial connection thereof, and means applying the potential appearing at one of said interconnections to the base electrode of said third transistor, said third transistor being operated at a temperature substantially equal to T, and said second and said third resistances having values respective to that of said first resistance such that the regulated potential between said first and said second terminal exhibits a substantially zero temperature coefficient.

Claim 10

A voltage regulator as set forth in claim 8 wherein said fifth direct current conductive means includes an integral number n at least one of further transistors in cascode connection with said third transistor; each of said further transistors having a base electrode connected to a separate one of said interconnections between each adjoining pair of serially connected reverse biased junctions, having an emitter electrode to which the collector electrode of said third transistor is direct current conductively connected, and having a collector electrode direct current conductively connected to the second end of said second resistance.

Claim 11

A voltage regulator as set forth in claim 9 wherein said forth direct current conductive means includes an integral number (n + 1) of still further transistors in cascode connection with said first transistor; each of said still further transistors having a base electrode connected to a separate one of said interconnections between each adjoining pair of serially-connected reverse-biased semiconductor junctions, having an emitter electrode to which the collector electrode of said first transistor is direct current conductively connected and having a collector electrode direct current conductively connected to said second terminal.

Claim 12

A voltage regulator as set forth in claim 1 which is a series voltage regulator including a series pass transistor, for completing the connection of said source of operating current between said first and second terminals, said series pass transistor having base and emitter and collector electrodes, with the emitter electrode of said series pass transistor being connected to said second terminal; said series regulator also including means for bleeding current connected between the collector and base electrodes of said series pass transistor, wherein said means directly responsive to the collector current of said first transistor for reducing the potential at said second terminal as referred to the potential at said first terminal comprises said bleeder resistor, the base emitter junction of said series pass resistor, and fourth direct current conductive means between the collector electrode of said first transistor and the base electrode of said series pass transistor.

Claim 13

A voltage regulator as set forth in claim 11 wherein said fourth direct current conductive means comprises a further transistor connected in common base amplifier configuration for the collector current of said first transistor, said further transistor having an emitter electrode to which the collector electrode of said first transistor direct current conductively connects and having a collector electrode direct current conductively connected to said second terminal, thereby to form a cascode configuration with said first transistor.

Claim 14

A voltage regulator as set forth in claim 11 wherein said second transistor has a base-emitter junction between its base and emitter electrodes which is operated at a temperature T and exhibits a second offset potential thereacross that exhibits a negative temperature coefficient in T, wherein said potential offsetting means includes direct-current conductive path through at least one reverse-biased semiconductor junction operated at said temperature T and responds to said temperature T to cause said first offset potential to exhibit a positive temperature coefficient in T, wherein said means for applying a bias potential between said first terminal and the base electrode of said second transistor responds to said temperature T to apply a bias potential that exhibits a temperature coefficient that is related to the coefficients of said first and said second offset potentials such that the regulated potential between said first and said second terminals exhibits a substantially zero temperature coefficient.

Claim 15

A voltage regulator as set forth in claim 11 wherein said second transistor has a base-emitter junction between its base and emitter electrodes which is operated at a temperature T and exhibits a second offset potential thereacross that exhibits a negative temperature coefficient in T, wherein said means for applying a bias potential between said first terminal and the base electrode of said second transistor applies a potential that is proportional to the offset potential across a forward-biased semiconductor junction operated at said temperature T and that therefore exhibits a negative-temperature-coefficient in T, wherein said second direct current conductive means consists of a first resistance connecting the emitter electrode of said second transistor and said first terminal, and wherein said potential offsetting means includes the serial connection of at least one reverse-biased semiconductor junction operated at said temperature T and a second resistance between said second terminal and the emitter electrode of said second transistor, said second resistance being of a value respective to that of said first resistance such that the regulated potential between said first and said second terminals exhibits a substantially zero temperature coefficient.

Claim 16

A voltage regulator as set forth in claim 14 further including means connected across said second resistance for causing a current to flow therethrough giving rise to a positive-temperature-coefficient component of potential drop thereacross.

Claim 17

A voltage regulator as set forth in claim 14 wherein the direct current conductive path in said potential offsetting means is through a plurality of serially connected reverse-biased semiconductor junctions with an interconnection between each adjoining pair thereof and wherein said fourth direct current conductive means comprises at least one further transistor in cascode connection with said first transistor; each said further transistor having a base electrode connected to receive bias potential from a separate one of said interconnections between each adjoining pair of serially connected reverse-biased semiconductor junctions, having an emitter electrode to which the collector electrode of said first transistor is direct current conductively connected, and having a collector electrode direct current conductively connected to the base electrode of said series pass transistor.

Claim 18

A voltage regulator as set forth in claim 11 wherein said second transistor has a base-emitter junction between its base and emitter electrodes which is operated at a temperature T and exhibits a second offset potential thereacross that exhibits a negative temperature coefficient in T, wherein said means for applying a bias potential between said first terminal and the base electrode of said second transistor applies a potential that is proportional to the offset potential across a forward-biased semiconductor junction operated at said temperature T and that therefore exhibits a negative temperature coefficient in T, wherein said second direct current conductive means consists of a first resistance connecting the emitter electrode of said second transistor and said first terminal, and wherein said potential offsetting means includes a third transistor of said first conductivity type and with base and emitter and collector electrodes, a second resistance having a first end connected to said second terminal and having a second end, fifth direct current conductive means connecting the collector electrode of said third transistor to the second end of said second resistance, a third resistance connected between said first terminal and the emitter electrode of said third transistor, a plurality of reverse-biased semiconductor junctions in serial connection between the second end of said second resistance and the emitter electrode of said second transistor with an interconnection between each adjoining pair of reverse-biased semiconductor junctions in said serial connection thereof, and means applying the potential appearing at one of said interconnections to the base electrodes of said third transistor, said third transistor being operated at a temperature substantially equal to T, and said second and said third resistances having values respective to that of said first resistance such that the regulated potential between said first and said second terminals exhibits a substantially zero temperature coefficient.

Claim 19

A voltage regulator as set forth in claim 17 wherein said fifth direct current conductive means includes an integral number n at least one of further transistors in cascode connection with said third transistor; each of said further transistors having a base electrode connected to a separate one of said interconnections between each adjoining pair of serially connected reverse-biased junctions, having an emitter electrode to which the collector electrode of said third transistor is direct current conductively connected, and having a collector electrode direct current conductively connected to the second end of said second resistance.

Claim 20

A voltage regulator as set forth in claim 18 wherein said fourth direct current conductive means includes an integral number (n + 1) of still further transistors in cascode connection with said first transistor; each of said still further transistors having a base electrode connected to a separate one of said interconnections between each adjoining pair of serially connected reverse-biased semiconductor junctions, having an emitter electrode to which the collector electrode of said first transistor is direct current conductively connected and having a collector electrode direct current conductively connected to the base electrode of said series pass transistor.

Claim 21

A voltage regulator as set forth in claim 1 wherein said third direct current conductive means comprises a constant current generator means.

Claim 22

A voltage regulator as set forth in claim 1 wherein said means direct coupling the collector electrode of said second transistor to the base electrode of said first transistor includes at least one transistor in common-collector amplifier configuration with respect to said direct coupling.