Process of making a deep diode solid state transformer

Claim 1

A process for making a semiconductor device comprising the process steps of: a. forming a plurality of droplets of a selective metal on a selective portion of a major surface area of a body of semiconductor material having two major opposed surfaces; b. establishing a thermal gradient substantially along an axis of the body perpendicular to the two major opposed surfaces; c. thermal migrating the plurality of droplets of selective metal through the body in the direction of the higher temperature of the thermal gradient from the one major surface to the, and terminating in, the other of the two major opposed surfaces to form a plurality of regions of recrystallized material of the body each having two opposed end surfaces, each end surface being coextensive with only one of the two major surfaces, solid solubility of the selective metal therein and a second and opposite type conductivity than the body and also forming a P-N junction at the contiguous surfaces of each of the regions and the body; d. affixing electrical contact means to selective end surfaces of selective regions to form a series circuit thereof to function as a primary winding of a transformer, and e. affixing electrical contact means to selective end surfaces of the remainder of the regions to form a series circuit thereof to function as a primary winding of the same transformer.