Patent US2135127A successfully refreshed from Google Patents.
US4070748A
Expired / Lapsed
US
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Integrated circuit structure having semiconductor resistance regions
Assignee: Raytheon Co
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Filing: 1976-08-30
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Granted: 1978-01-31
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Expires: 1996-08-30
Abstract
Abstract A semiconductor integrated circuit which is reduced in size by having active and/or passive elements in an epitaxial layer having a [100] crystallographic surface, and having anisotropically etched regions with sloped [111] crystallographic surface walls which isolate adjacent semiconductor elements and/or regions of semiconductor material beneath said elements. Conductors interconnecting said elements are supported on the [100] and [111] crystallographic surfaces and contact said elements and/or said high conductivity regions through apertures in surface passivating protective coatings on said surfaces.
Inventors
- 👤 Wilhelm H. Legat
- 👤 Keith G. Taft
- 👤 Karl H. Tiefert
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-26 20:10
CPC Classifications
H; H10; H10P; H10P50/00; H10P50/60; H10P50/64; H10P50/642; H10P50/644; H10W; H10W10/00; H10W10/01; H10W10/021; H10W10/20; H10W20/00; H10W20/01
Claims Analysis
Total Claims: 14
Claim 1
Independent Claim
148 words
The method of forming an integrated circuit comprising the steps of: forming a semiconducting layer having a <100> crystallographic surface on a supporting substrate comprising epitaxially depositing said layer over said substrate; forming in said layer a plurality of active elements with said elements having a plurality of emitter regions formed in common base regions, base contacts formed on said base regions intermediate said emitter regions, and resistive regions comprising portions of said epitaxial layer directly connected to collector regions, said collector regions forming collector junctions with said base regions, portions of the boundaries of said resistive regions being formed by etching said layer from said <100> crystallographic surface along <111> crystallographic surface planes at least through said layer; and forming conductors which are supported on insulating layers on said <100> and <111> surfaces of said layer and which interconnect regions of at least some of said elements.
Claim 2
Independent Claim
148 words
The method of forming an integrated circuit comprising the steps of: forming a semiconducting layer having a <100> crystallographic surface on a supporting substrate comprising epitaxially depositing said layer over said substrate; forming in said layer a plurality of active elements with said elements having a plurality of emitter regions formed in common base regions, base contacts formed on said base regions intermediate said emitter regions, and resistive regions comprising portions of said epitaxial layer directly connected to collector regions, said collector regions forming collector junctions with said base regions, portions of the boundaries of said resistive regions being formed by etching said layer from said <100> crystallographic surface along <111> crystallographic surface planes at least through said layer; and forming conductors which are supported on insulating layers on said <100> and <111> surfaces of said layer and which interconnect regions of at least some of said elements.
Claim 3
Dependent Claim
38 words
The method in accordance with claim 1 wherein said step of forming said layer on said substrate comprises forming said substrate of a semiconductor comprising a first conductivity type and forming said layer of a second conductivity type.
Claim 4
Dependent Claim
24 words
The method in accordance with claim 2 wherein said layer is epitaxially formed on said substrate by chemical vapor decomposition at an elevated temperature.
Claim 5
Dependent Claim
27 words
The method in accordance with claim 3 wherein said step of forming said elements comprises diffusing base regions of said first conductivity type into said epitaxial layer.
Claim 6
Dependent Claim
42 words
The method in accordance with claim 4 wherein said step of forming said elements comprises forming emitter junctions with said base regions and removing semiconductor material from regions spaced from said emitter junction regions between said elements by anisotropically etching said layer.
Claim 7
Dependent Claim
21 words
The method in accordance with claim 5 wherein emitter junction regions are diffused into said diffused region after said anisotropic etching.
Claim 8
Independent Claim
143 words
The method of forming an integrated circuit comprising the steps of: forming a semiconducting layer having a <100> crystallographic surface on a supporting substrate comprising epitaxially depositing said layer over said substrate; forming in said layer a plurality of active elements with said elements having a plurality of emitter regions formed in common base regions, base contacts formed on said base regions intermediate said emitter regions, and resistive regions comprising portions of said epitaxial layer directly connected to collector regions, said collector regions forming collector junctions with said base regions, portions of the boundaries of said resistive regions being formed by etching said layer from said <100> crystallographic surface along <111> crystallographic surface planes; and forming conductors which are supported on insulating layers on said <100> and <111> surfaces of said layer and which interconnect regions of at least some of said elements.
Claim 9
Independent Claim
143 words
The method of forming an integrated circuit comprising the steps of: forming a semiconducting layer having a <100> crystallographic surface on a supporting substrate comprising epitaxially depositing said layer over said substrate; forming in said layer a plurality of active elements with said elements having a plurality of emitter regions formed in common base regions, base contacts formed on said base regions intermediate said emitter regions, and resistive regions comprising portions of said epitaxial layer directly connected to collector regions, said collector regions forming collector junctions with said base regions, portions of the boundaries of said resistive regions being formed by etching said layer from said <100> crystallographic surface along <111> crystallographic surface planes; and forming conductors which are supported on insulating layers on said <100> and <111> surfaces of said layer and which interconnect regions of at least some of said elements.
Claim 10
Dependent Claim
38 words
The method in accordance with claim 7 wherein said step of forming said layer on said substrate comprises forming said substrate of a semiconductor comprising a first conductivity type and forming said layer of a second conductivity type.
Claim 11
Dependent Claim
24 words
The method in accordance with claim 8 wherein said layer is epitaxially formed on said substrate by chemical vapor decomposition at an elevated temperature.
Claim 12
Dependent Claim
27 words
The method in accordance with claim 9 wherein said step of forming said elements comprises diffusing base regions of said first conductivity type into said epitaxial layer.
Claim 13
Dependent Claim
42 words
The method in accordance with claim 10 wherein said step of forming said elements comprises forming emitter junctions with said base regions and removing semiconductor material from regions spaced from said emitter junction regions between said elements by anisotropically etching said layer.
Claim 14
Dependent Claim
21 words
The method in accordance with claim 11 wherein emitter junction regions are diffused into said diffused region after said anisotropic etching.
References Cited (Backward Citations)
US3623218A
Cited
US3768150A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1981-01-30 | 1981-08-01 | 1982-01-31 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1985-01-30 | 1985-08-01 | 1986-01-31 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1989-01-30 | 1989-08-01 | 1990-01-31 | $7700.00 | Window Closed / Lapsed |