High voltage driver circuit

Claim 2

A semiconductor switching circuit for switching between a higher and a lower voltage comprising: a first transistor having a breakdown voltage substantially equal to the difference between said higher and said lower voltages and less than said higher voltage, said transistor including a control electrode and first and second current carrying electrodes; and control means connected to said control electrode for alternately switching said first transistor between a first current carrying state when said transistor is turned on and a breakdown state when said transistor is off.

Claim 3

The circuit of claim 1 wherein said first transistor comprises a metal-oxide-semiconductor field effect transistor including a gate electrode, a source electrode and a drain electrode; said source electrode adapted to be connected to a source of voltage equal to said higher voltage and said drain electrode adapted to be connected to a device to be operated by said switching circuit.

Claim 4

The circuit of claim 2 further comprising diode means including an anode and a cathode, said anode connected to said gate electrode and said cathode connected to said source electrode of said metal-oxide-semiconductor field effect transistor.

Claim 5

The circuit of claim 3 wherein said control means comprises semiconductor switching means including one or more switching transistors operating at a voltage less than either of said higher and said lower voltages; and capacitor means connecting said control means with said gate electrode of said first transistor.

Claim 6

The circuit of claim 4 wherein said capacitor means comprises metal-oxide-semiconductor capacitor means.

Claim 7

The circuit of claim 5 wherein said first transistor and said diode means comprise integrated circuit transistor means and diode means fabricated on a single semiconductor substrate; and wherein said control means comprises integrated circuit control means fabricated on a second semiconductor substrate isolated from said first semiconductor substrate.

Claim 8

The device of claim 6 wherein said capacitor means comprises first metal-oxide-semiconductor capacitor means on said first substrate and second metal-oxide-semiconductor capacitor means on said second substrate and means connecting said first and second capacitor means.

Claim 9

The device of claim 6 wherein sad capacitor means comprises discrete capacitor means external to said first and second substrates.

Claim 10

The circuit of claim 1 further comprising: gas discharge display means having a first terminal connected to said first transistor; a controlled current sink comprising: a main current carrying transistor having first and second current carrying electrodes and a control electrode for regulating the amount of current in said main current carrying transistor; a first enhancement mode field effect transistor connected between said control electrode and said first current carrying electrode of said main current carrying transistor; a second depletion mode field effect transistor connected between said control electrode and said second current carrying electrode of said main current carrying transistor; each of said first enhancement mode field effect transistor and said second depletion mode field effect transistor including a gate terminal, said gate terminals commonly connected and connected to said control terminal of said main current carrying transistor; and means for selectively grounding said control terminal of said main current carrying transistor; said main current carrying transistor connected to a second terminal of said gas discharge display means.