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US4070206A Expired / Lapsed US ⏱️ 0.0 years remaining

Polycrystalline or amorphous semiconductor photovoltaic device having improved collection efficiency

Assignee: RCA Corp
•
Filing: 1976-05-20
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Granted: 1978-01-24
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Expires: 1996-05-20
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Abstract

Abstract A body of semiconductor material having a first surface and a second surface spaced from the first surface includes a first layer along the first surface, a second layer along the second surface, a third layer between and contiguous to the first and second layers. The third layer is of a conductivity type opposite that of the first and second layers so as to form first and second P-N junctions respectively therebetween. The thickness of the third layer is at least twice the minority carrier diffusion length of the semiconductor material, so that carriers generated within the third layer have a high probability of being collected by one of the P-N junctions. The body includes means for electrically connecting the first and second P-N junctions and means for transferring the carriers collected at the first P-N junction to a portion of the first surface.

Inventors

  • 👤 Henry Kressel
  • 👤 Robert Vincent D'Aiello
  • 👤 Paul Harvey Robinson

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-10-26 02:06
CPC Classifications
H; H10; H10F; H10F10/00; H10F10/10; H10F10/14; H10F10/142; H10F77/00; H10F77/40; H10F77/42; H10F77/48; H10F77/488; Y; Y02; Y02E; Y02E10/00; Y02E10/50; Y02E10/52; Y02E10/544

Claims Analysis

Total Claims: 12
Claim 1
Independent Claim 219 words
A photovoltaic device comprising: a body of polycrystalline or amorphous semiconductor material capable of generating carriers by the absorption of solar radiation having first and second opposed surfaces and including therein a first layer of one conductivity type along the first surface, a second layer of the same conductivity type as said first layer along the second surface and a third layer between and contiguous to both first and second layers, said third layer being of a conductivity type opposite the conductivity type of said first and second layers so as to form a first P-N junction between said first and third layers and a second P-N junction between said second and third layers, said third layer being of a thickness, from said first P-N junction to said second P-N junction, of at least about twice the minority carrier diffusion length of the semiconductor material of said body; a first pocket region at said first surface and extending as far as the first P-N junction, said first pocket region being of the same conductivity type as said third layer but of a higher concentration; means for electrically connecting the first and second P-N junctions; and means for both electrically contacting said second layer at said second surface and reflecting solar radiation unabsorbed by said body back into said body.
Claim 2
Dependent Claim 219 words
A photovoltaic device comprising: a body of polycrystalline or amorphous semiconductor material capable of generating carriers by the absorption of solar radiation having first and second opposed surfaces and including therein a first layer of one conductivity type along the first surface, a second layer of the same conductivity type as said first layer along the second surface and a third layer between and contiguous to both first and second layers, said third layer being of a conductivity type opposite the conductivity type of said first and second layers so as to form a first P-N junction between said first and third layers and a second P-N junction between said second and third layers, said third layer being of a thickness, from said first P-N junction to said second P-N junction, of at least about twice the minority carrier diffusion length of the semiconductor material of said body; a first pocket region at said first surface and extending as far as the first P-N junction, said first pocket region being of the same conductivity type as said third layer but of a higher concentration; means for electrically connecting the first and second P-N junctions; and means for both electrically contacting said second layer at said second surface and reflecting solar radiation unabsorbed by said body back into said body.
Claim 3
Dependent Claim 55 words
The photovoltaic device in accordance with claim 1 wherein said electrically connecting means is a second pocket region at said first surface crossing the first P-N junction and extending to the second P-N junction, said second pocket region being of the same conductivity type as the first and second layers but of a higher concentration.
Claim 4
Dependent Claim 30 words
The photovoltaic device in accordance with claim 2 further comprising a first electrode on said first pocket region at the first surface, having an ohmic contact with said pocket region.
Claim 5
Dependent Claim 25 words
The photovoltaic device in accordance with claim 3 further comprising a second electrode along the second surface having an ohmic contact with said second layer.
Claim 6
Dependent Claim 30 words
The photovoltaic device in accordance with claim 4 wherein the thickness of said third layer is about twice the minority carrier diffusion length of the semiconductor material of said body.
Claim 7
Dependent Claim 62 words
The photovoltaic device in accordance with claim 2 further comprising: a first electrode on said first pocket region at the first surface, having an ohmic contact with said first pocket region; and a grid electrode on a portion of the first surface spaced between said first and second pocket regions at the first surface, having an ohmic contact with said first layer.
Claim 8
Dependent Claim 36 words
The photovoltaic device in accordance with claim 6 wherein said grid electrode is on 5% or less of the surface area of the first surface between said first and second pocket regions at the first surface.
Claim 9
Dependent Claim 15 words
The photovoltaic device in accordance with claim 7 wherein said grid electrode is finger shaped.
Claim 10
Dependent Claim 18 words
The photovoltaic device in accordance with claim 6 further comprising solar radiation reflecting means on the second surface.
Claim 11
Dependent Claim 35 words
The photovoltaic device in accordance with claim 9 wherein the thickness of said second layer is on the order of at least twice the minority carrier diffusion length of the semiconductor material of said body.
Claim 12
Dependent Claim 18 words
The photovoltaic device in accordance with claim 6 further comprising solar reflecting means spaced from said second surface.

References Cited (Backward Citations)

US2001672A Cited
US3175929A Cited
US3331707A Cited
US3359137A Cited
US3483039A Cited
US3682708A Cited
US3994012A Cited
US3990101A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1981-01-23 1981-07-25 1982-01-24 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1985-01-23 1985-07-25 1986-01-24 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 1989-01-23 1989-07-25 1990-01-24 $7700.00 Window Closed / Lapsed

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