US4065625A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Lead frame for a semiconductor device
Assignee: Toshiba Corp
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Filing: 1975-10-30
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Granted: 1977-12-27
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Expires: 1995-10-30
Abstract
Abstract A lead frame for a semiconductor device, wherein a semiconductor chip-mounting portion, inner lead portions to be connected to the electrodes of said chip and outer lead portions connected to the inner lead portions are each formed of an iron core strip, both sides of which are clad with a layer of aluminum or alloy thereof.
Inventors
- 👤 Naoji Iwai
- 👤 Takashi Uchida
- 👤 Takemi Abe
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-25 23:14
CPC Classifications
H; H10; H10W; H10W70/00; H10W70/01; H10W70/04; B; B23; B23K; B23K20/00; H10W70/40; H10W70/456; H10W70/457; H10W72/00; H10W72/01; H10W72/0198; H10W72/071; H10W72/075; H10W72/50; H10W72/541; H10W72/5449; H10W72/551; H10W72/552; H10W72/5522; H10W72/59; H10W72/851; H10W72/874; H10W72/884; H10W72/90; H10W72/951; H10W72/952; H10W74/00; H10W90/00; H10W90/701; H10W90/731; H10W90/736; H10W90/751; H10W90/756; Y; Y10; Y10T; Y10T428/00; Y10T428/12; Y10T428/12361; Y10T428/12493; Y10T428/12528; Y10T428/12736; Y10T428/1275; Y10T428/12757; Y10T428/26; Y10T428/263; Y10T428/264; Y10T428/265
Claims Analysis
Total Claims: 5
Claim 1
Independent Claim
112 words
A lead frame for a semiconductor device comprising: a. a semiconductor chip-mounting portion; b. inner lead portions which are to be connected to the electrode of the semiconductor chip; c. outer lead portions connected to the inner lead portions; and d. connection portions which couple said chip mounting portion, outer and inner lead portions together; wherein said chip-mounting portion, inner lead portions and outer lead portions are each formed of an iron core sheet, both sides of which are clad with layers of an aluminum alloy containing 0.5% to 1.5% by weight of silicon and 0.3 to 0.6% by weight of iron, wherein said layers are from 2 - 20 microns thick.
Claim 2
Dependent Claim
112 words
A lead frame for a semiconductor device comprising: a. a semiconductor chip-mounting portion; b. inner lead portions which are to be connected to the electrode of the semiconductor chip; c. outer lead portions connected to the inner lead portions; and d. connection portions which couple said chip mounting portion, outer and inner lead portions together; wherein said chip-mounting portion, inner lead portions and outer lead portions are each formed of an iron core sheet, both sides of which are clad with layers of an aluminum alloy containing 0.5% to 1.5% by weight of silicon and 0.3 to 0.6% by weight of iron, wherein said layers are from 2 - 20 microns thick.
Claim 3
Dependent Claim
33 words
The lead frame of claim 1 wherein said alumimum alloy consists essentially of 0.5 to 1.5% by weight of silicon, 0.3 to 0.6% by weight of iron and the remainder is essentially aluminum.
Claim 4
Dependent Claim
172 words
A process for making a lead frame for a semiconductor device including steps of cold pressing an iron core sheet and layers of aluminum alloy put on both sides of said iron core sheet in direct fact to face contact in order to form an integral firmly clad material, said aluminum alloy layer containing 0.5 to 1.5% by weight of silicon and 0.3 to 0.6% by weight of iron; annealing said clad material at temperatures ranging between higher than the softening point of said iron core sheet and lower than 600° C; cold rolling the iron core sheet to 30 to 70% of its original thickness at most, with the thickness of said aluminum alloy layer reduced to 2 to 20 microns; and punching said clad material to form a lead frame for a semiconductor device having a semiconductor chip-mounting portion, inner lead portions to be connected to electrodes of said semiconductor chip and outer lead portions connected to said inner lead portions, all these portions being coupled together by conductive portions.
Claim 5
Dependent Claim
172 words
A process for making a lead frame for a semiconductor device including steps of cold pressing an iron core sheet and layers of aluminum alloy put on both sides of said iron core sheet in direct fact to face contact in order to form an integral firmly clad material, said aluminum alloy layer containing 0.5 to 1.5% by weight of silicon and 0.3 to 0.6% by weight of iron; annealing said clad material at temperatures ranging between higher than the softening point of said iron core sheet and lower than 600° C; cold rolling the iron core sheet to 30 to 70% of its original thickness at most, with the thickness of said aluminum alloy layer reduced to 2 to 20 microns; and punching said clad material to form a lead frame for a semiconductor device having a semiconductor chip-mounting portion, inner lead portions to be connected to electrodes of said semiconductor chip and outer lead portions connected to said inner lead portions, all these portions being coupled together by conductive portions.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1980-12-26 | 1981-06-27 | 1981-12-27 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1984-12-26 | 1985-06-27 | 1985-12-27 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1988-12-26 | 1989-06-27 | 1989-12-27 | $7700.00 | Window Closed / Lapsed |