US4063277A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor thyristor devices having breakover protection
Assignee: RCA Corp
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Filing: 1976-05-28
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Granted: 1977-12-13
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Expires: 1996-05-28
Abstract
Abstract Semiconductor thyristor devices with means, inherent in the structure thereof, for protecting the devices against damage due to breakover. The means requires, in a semiconductor controlled rectifier device, for example, that the active gate region have a comparatively smaller total charge than the adjacent base layer separating the active gate region from the anode layer.
Inventors
- 👤 Kenneth Herbert Gooen
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 21:04
CPC Classifications
H; H10; H10D; H10D62/00; H10D62/10; H10D62/13; H10D62/141; H10D62/148; H10D18/00; H10D18/80; H10D62/142; H10D62/17; H10D62/192; H10D62/206
Claims Analysis
Total Claims: 14
Claim 1
Independent Claim
230 words
A semiconductor device comprising: an anode layer of semiconductor material adjacent a first surface of a body of semiconductor material, said anode layer containing one type conductivity modifiers; a base layer of semiconductor material within said body adjacent said anode layer, said base layer containing a number of uncompensated second type conductivity modifiers and forming a first PN junction with said anode layer at the interface therewith; an active gate region of semiconductor material within said body adjacent said base layer and spaced apart from said anode layer thereby, said active gate region containing a number of uncompensated said one type conductivity modifiers and forming a second PN junction with said base layer at the interface therewith, said number of uncompensated conductivity modifiers in said active gate region being less than that required to break down said second PN junction in an avalanche mode, said number of uncompensated conductivity modifiers in said active gate region being comparatively less than said number of uncompensated conductivity modifiers in said base layer; and a cathode layer of semiconductor material adjacent a second major surface, and also adjacent said active gate region, said cathode layer being spaced apart from said base layer thereby, said second surface opposing said first surface, said cathode layer containing said second type conductivity modifiers and forming a third PN junction with said active gate region at the interface therewith.
Claim 2
Dependent Claim
230 words
A semiconductor device comprising: an anode layer of semiconductor material adjacent a first surface of a body of semiconductor material, said anode layer containing one type conductivity modifiers; a base layer of semiconductor material within said body adjacent said anode layer, said base layer containing a number of uncompensated second type conductivity modifiers and forming a first PN junction with said anode layer at the interface therewith; an active gate region of semiconductor material within said body adjacent said base layer and spaced apart from said anode layer thereby, said active gate region containing a number of uncompensated said one type conductivity modifiers and forming a second PN junction with said base layer at the interface therewith, said number of uncompensated conductivity modifiers in said active gate region being less than that required to break down said second PN junction in an avalanche mode, said number of uncompensated conductivity modifiers in said active gate region being comparatively less than said number of uncompensated conductivity modifiers in said base layer; and a cathode layer of semiconductor material adjacent a second major surface, and also adjacent said active gate region, said cathode layer being spaced apart from said base layer thereby, said second surface opposing said first surface, said cathode layer containing said second type conductivity modifiers and forming a third PN junction with said active gate region at the interface therewith.
Claim 3
Dependent Claim
36 words
A semiconductor device as claimed in claim 1 further comprising: a first region of semiconductor material having said one type conductivity modifiers extending from said second surface through said cathode layer to said active gate region.
Claim 4
Dependent Claim
20 words
A semiconductor device as claimed in claim 2 wherein: said first region is substantially centrally located in said cathode layer.
Claim 5
Dependent Claim
17 words
A semiconductor device as claimed in claim 2 further comprising: a moat laterally surrounding said first region.
Claim 6
Dependent Claim
15 words
A semiconductor device as claimed in claim 4 wherein: said moat contains isolating material therein.
Claim 7
Dependent Claim
36 words
A semiconductor device as claimed in claim 1 further comprising: a second region having said one type conductivity modifiers substantially laterally surrounding said cathode layer and extending from said second surface to said active gate region.
Claim 8
Dependent Claim
59 words
A semiconductor device as claimed in claim 1 further comprising: a plurality of third regions having said one type conductivity modifiers, said third regions being dispersed in said cathode layer extending from said second surface to said active gate region; and electrode means in electrical contact with said cathode layer and substantially completely overlying said plurality of third regions.
Claim 9
Dependent Claim
34 words
A semiconductor device as claimed in claim 1 wherein: said anode layer comprises an upper portion and a lower portion, said upper portion having a comparatively lower conductivity modifier concentration than said lower portion.
Claim 10
Dependent Claim
37 words
A semiconductor device as claimed in claim 8 wherein: said upper portion has a total number of conductivity modifiers which is comparatively lower in number than the total number of said conductivity modifiers in said base layer.
Claim 11
Dependent Claim
41 words
A semiconductor device as claimed in claim 9 further comprising: a cathode region having said second type conductivity modifiers in said lower porition of said anode layer; and an anode region having said one type conductivity modifiers in said cathode layer.
Claim 12
Dependent Claim
19 words
A semiconductor device as claimed in claim 10 wherein: said cathode region and said anode region oppose each other.
Claim 13
Dependent Claim
41 words
A semiconductor as claimed in claim 10 further comprising: a first region extending from said second surface through said cathode layer to said active gate region, said first region comprising two laterally adjacent portions, said portions containing different type conductivity modifiers.
Claim 14
Dependent Claim
34 words
A semiconductor device as claimed in claim 10 further comprising: a plurality of third regions having said one type conductivity modifiers, said third regions being dispersed in said cathode layer and said cathode region.
References Cited (Backward Citations)
US3792320A
Cited
US3855611A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1980-12-12 | 1981-06-13 | 1981-12-13 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1984-12-12 | 1985-06-13 | 1985-12-13 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1988-12-12 | 1989-06-13 | 1989-12-13 | $7700.00 | Window Closed / Lapsed |