US4063276A
Expired / Lapsed
US
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Semiconductor photoelectron emission device
Assignee: Hamamatsu Terebi KK
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Filing: 1976-10-26
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Granted: 1977-12-13
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Expires: 1996-10-26
Abstract
Abstract Semiconductor photoelectron emission device comprising mixed crystals of two or more different semiconductors forming a heterojunction with direct transition type defining a first region in which may be excited by photoelectrons and an indirect transition type defining a second region whose forbidden band gap is wider than that of the first region and the surface of which is a photoelectron emission surface.
Inventors
- 👤 Katsuo Hara
- 👤 Minoru Hagino
- 👤 Tokuzo Sukegawa
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 09:47
CPC Classifications
H; H01; H01J; H01J9/00; H01J9/02; H01J9/12; H01J1/00; H01J1/02; H01J1/34; H01J29/00; H01J29/02; H01J29/10; H01J29/36; H01J29/39; H01J29/45; H01J29/451; H01J2201/00; H01J2201/34; H01J2201/342; H01J2201/3421; H01J2201/3423
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
169 words
A semiconductor photoelectron emission device comprising a transparent substrate; a first layer of direct transition type semiconductor of p-type GaSb; a second layer of Al x Ga.sub.(l-x)Sb wherein x is a positive number less than one, having high resistance and wide forbidden band on a selected portion of said first layer and defining a heterojunction therewith; said first and second layers having similar crystal structures at said junction and small differences in lattice constants; a third layer on other selected portions of said first layer and comprising an insulator or high resistance; a pair of electrodes disposed on non-covered areas of said first layer; a fourth layer of indirect transition type semiconconductor of p-type Al x Ga(l-x)Sb, wherein x is a positive number less than one, having a narrower forbidden band than said second layer of high impurity concentration on selected portions of said third layer and covering said second layer, said fourth layer having an emissive surface on the opposite side, whereby a transmission type device is formed.
Claim 2
Dependent Claim
169 words
A semiconductor photoelectron emission device comprising a transparent substrate; a first layer of direct transition type semiconductor of p-type GaSb; a second layer of Al x Ga.sub.(l-x)Sb wherein x is a positive number less than one, having high resistance and wide forbidden band on a selected portion of said first layer and defining a heterojunction therewith; said first and second layers having similar crystal structures at said junction and small differences in lattice constants; a third layer on other selected portions of said first layer and comprising an insulator or high resistance; a pair of electrodes disposed on non-covered areas of said first layer; a fourth layer of indirect transition type semiconconductor of p-type Al x Ga(l-x)Sb, wherein x is a positive number less than one, having a narrower forbidden band than said second layer of high impurity concentration on selected portions of said third layer and covering said second layer, said fourth layer having an emissive surface on the opposite side, whereby a transmission type device is formed.
Claim 3
Dependent Claim
55 words
The device of claim 1, wherein said base is selected from the group consisting of AnSe, GaP, ZnS, SeCd, ZnTe, AlP having wide forbidden band, sapphire, corundum, quartz and transparent aluminia; and wherein said insulating layer or high resistance layer is selected from the group consisting of Al 2 O 3 and SiO 2 .
Claim 4
Dependent Claim
14 words
The device of claim 1, wherein further comprising means for providing drift electric field.
Claim 5
Dependent Claim
25 words
The device of claim 1, wherein lattice sites of the mixed crystals have atoms thereof replaced with other atoms of In, Bi, As and P.
Claim 6
Dependent Claim
18 words
The device of claim 1, wherein said GaSb has an effective forbidden band of 0.7 to 1.25 eV.
Claim 7
Dependent Claim
20 words
The device of claim 1, wherein said third layer has a thickness equivalent of less than the electron diffusion length.
References Cited (Backward Citations)
US3696262A
Cited
US3814996A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1980-12-12 | 1981-06-13 | 1981-12-13 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1984-12-12 | 1985-06-13 | 1985-12-13 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1988-12-12 | 1989-06-13 | 1989-12-13 | $7700.00 | Window Closed / Lapsed |